Texture Analysis of Thin Films and Surface Layers by Low Incidence Angle X-ray Diffraction

1988 ◽  
Vol 32 ◽  
pp. 285-292 ◽  
Author(s):  
J. J. Heizmann ◽  
A. Vadon ◽  
D. Schlatter ◽  
J. Bessières
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Incidence Angle ◽  
X Ray Diffraction ◽  
Electronic Industry ◽  
Surface Layers ◽  
X Ray ◽  
Insufficient Amount ◽  
Reactivity Of Solids ◽  
Low Incidence

It is necessary to know the orientation of thin surface layers for the electronic industry as well as for different studies on interphases (epitaxy, topotaxy, phase transformation, reactivity of solids).It is difficult to obtain information with a conventional Schulz goniometer (Bragg-Brentano geometry) because of the insufficient amount of diffracting material.

Enhancement of Aurivillius Phase Formation Kinetics in SBT Thin Films using Nanoparticle Seeding

2003 ◽  
Vol 784 ◽  
Author(s):  
Yun-Mo Sung ◽  
Woo-Chul Kwak ◽  
Se-Yon Jung ◽  
Seung-Joon Hwang
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Phase Transformation ◽  
Phase Formation ◽  
X Ray Diffraction ◽  
Aurivillius Phase ◽  
X Ray ◽  
Si Substrates ◽  
Formation Kinetics ◽  
Kinetics Of

ABSTRACTPt/Ti/SiO2/Si substrates seeded by SBT nanoparticles (∼60–80 nm) were used to enhance the phase formation kinetics of Sr0.7Bi2.4Ta2O9 (SBT) thin films. The volume fractions of Aurivillius phase formation obtained through quantitative x-ray diffraction (Q-XRD) analyses showed highly enhanced kinetics in seeded SBT thin films. The Avrami exponents were determined as ∼1.4 and ∼0.9 for unseeded and seeded SBT films, respectively, which reveals different nucleation modes. By using Arrhenius–type plots the activation energy values for the phase transformation of unseeded and seeded SBT thin films were determined to be ∼264 and ∼168 kJ/mol, respectively. This gives a key reason to the enhanced kinetics in seeded films. Microstructural analyses on unseeded SBT thin films showed formation of randomly oriented needle-like crystals, while those on seeded ones showed formation of domains comprised of directionally grown worm-like crystals.

Analysis of Surface Layers and Thin Films by Low Incident Angle X-Ray Diffraction

1987 ◽  
pp. 457-464 ◽  
Author(s):  
S. S. Iyengar ◽  
M. W. Santana ◽  
H. Windischmann ◽  
P. Engler
Keyword(s):  
Thin Films ◽  
Incident Angle ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
X Ray

scholarly journals Comparative Study Between Low Incidence X-Ray Diffraction and Electron Diffraction Applied to Texture Determination of Thin Films of Cu/NaCl

1991 ◽  
Vol 14 ◽  
pp. 127-132
Author(s):  
D. Schlatter ◽  
C. Baltzinger ◽  
A. Tizliouine ◽  
J. J. Heizmann ◽  
C. Burggraf
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Comparative Study ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Incidence

Analysis of Surface Layers and Thin Films by Low Incident Angle X-Ray Diffraction

1986 ◽  
Vol 30 ◽  
pp. 457-464 ◽  
Author(s):  
S. S. Iyengar ◽  
M. W. Santana ◽  
H. Windischmann ◽  
P. Engler
Keyword(s):  
Thin Films ◽  
Incident Angle ◽  
Grazing Incidence ◽  
Electronics Industry ◽  
Solid Surfaces ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
Double Crystal ◽  
X Ray ◽  
Grazing Incidence Diffraction

Due to the current high interest in characterizing epitaxially deposited thin films required by the electronics industry as well as the increased attention in elucidating reactions between solid surfaces and the environment (e.g., corrosion), investigators have increased their efforts in developing X-ray procedures for analyzing films and surfaces less than 2 μm thick. For example, an entire session of the 1985 Denver Conference on Applications of X-ray Analysis was devoted to this subject and an excellent review of X-ray diffraction techniques for characterizing thin films was recently published by Segmuller (1). Specific techniques include grazing incidence diffraction (2, 3), double crystal diffraction (3), and the use of the Seemann-Bohlin focusing geometry (4, 5).

In-situ synchrotron X-ray diffraction study of stress-induced phase transformation in Ti50.1Ni40.8Cu9.1 thin films

2012 ◽  
Vol 407 (17) ◽  
pp. 3437-3440 ◽  
Author(s):  
H. Wang ◽  
G.A. Sun ◽  
B. Chen ◽  
Y.Q. Fu ◽  
X.L. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Diffraction Study ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Characterization of Thin Films by Low Incidence X-Ray Diffraction

2012 ◽  
Vol 01 (03) ◽  
pp. 35-39 ◽  
Author(s):  
Mirtat Bouroushian ◽  
Tatjana Kosanovic
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Incidence

The Origin of Anomalous Strain in Thin Sputtered Mo Films on Si(100)

1991 ◽  
Vol 239 ◽  
Author(s):  
J. Tao ◽  
D. Adams ◽  
S. M. Yalisove ◽  
J. C. Bilello
Keyword(s):  
Film Thickness ◽  
Incidence Angle ◽  
Film Stress ◽  
Structure Evolution ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Plan View ◽  
X Ray ◽  
Low Incidence ◽  
Diffraction Patterns

ABSTRACTStress and structure evolution in thin films of sputtered Mo on Si(100) substrates has been studied, as a function of microstructure, by x-ray diffraction, transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS). Double crystal x-ray diffraction topography (DCDT) has been employed to determine film stress as a function of thickness. High compressive stress, about 1000 MPa, is found for the thinnest Mo film. With increasing film thickness a minimal residual stress level is reached. Low incidence angle x-ray diffraction patterns indicated that crystalline Mo is present even in the thinnest films. Line broadening of the Mo(l10) diffraction peak has shown that the grain dimension is comparable to the film thickness over the range studied. Plan view TEM observations of films less than 20nm demonstrated the presence of continuous film with grain dimensions on the order of film thickness, in good agreement with the x-ray results.

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