scholarly journals Modeling of Thermal Effects in Semiconductor Structures

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 53-58
Author(s):  
Christopher M. Snowden
Keyword(s):  
Thermal Effects ◽  
Large Scale ◽  
High Electron Mobility Transistors ◽  
Thermal Modelling ◽  
High Electron ◽  
Temperature Model ◽  
Active Devices ◽  
Electron Mobility Transistors ◽  
Fully Coupled ◽  
Scale Surface

A fully coupled electro-thermal hydrodynamic model is described which is suitable for modelling active devices. The model is applied to the non-isothermal simulation of pseudomorphic high electron mobility transistors (pHEMTs). A large-scale surface temperature model is described which allows thermal modelling of semiconductor devices and monolithic circuits. An example of the application of thermal modelling to monolithic circuit characterization is given.

Thermal effects in AlGaN/GaN/Si high electron mobility transistors

2011 ◽  
Vol 61 (1) ◽  
pp. 1-6 ◽  
Author(s):  
I. Saidi ◽  
Y. Cordier ◽  
M. Chmielowska ◽  
H. Mejri ◽  
H. Maaref
Keyword(s):  
Electron Mobility ◽  
Thermal Effects ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

MICROWAVE GaN-BASED POWER TRANSISTORS ON LARGE-SCALE SILICON WAFERS

2003 ◽  
Vol 13 (01) ◽  
pp. 265-275
Author(s):  
S. MANOHAR ◽  
A. PHAM ◽  
J. BROWN ◽  
R. BORGES ◽  
K. LINTHICUM
Keyword(s):  
Large Scale ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Power Transistors ◽  
Electron Mobility Transistors ◽  
Gan On Si ◽  
Gan Heterostructure

This paper presents the development of microwave Gallium nitride (GaN) heterostructure field-effect transistors (HFETs) on silicon (Si). GaN-on-Si provides a low-cost manufacturable platform that could lead to the commercialization of GaN-based power devices for wireless applications. Small periphery GaN high electron mobility transistors (HEMTs) on Si exhibited a maximum drain current of 900mA/mm, a peak gm of 300 mS/mm, and a microwave output power density of 1.5 W/mm at 2 GHz. Microwave characterization and device modeling of GaN HEMTs on Si are discussed.

HVPE-GROWN AlGaN/GaN HEMTs

2003 ◽  
Vol 764 ◽  
Author(s):  
B. Luo ◽  
F. Ren ◽  
M. A. Mastro ◽  
D. Tsvetkov ◽  
A. Pechnikov ◽  
...  
Keyword(s):  
High Electron Mobility Transistors ◽  
Hydride Vapor Phase Epitaxy ◽  
Root Mean Square Roughness ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Collapse Characteristics ◽  
Capacitance Voltage ◽  
Source Current ◽  
Measurement Area

AbstractHigh quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.

IR Thermography for Temperature Measurements and Fault Location on AlGaN/GaN HEMTs and MMICs

2015 ◽  
Author(s):  
Lény Baczkowski ◽  
Franck Vouzelaud ◽  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Jean-Claude Clément ◽  
...  
Keyword(s):  
Fault Location ◽  
Hot Spot ◽  
Life Time ◽  
High Electron Mobility Transistors ◽  
Junction Temperature ◽  
High Electron ◽  
Ir Thermography ◽  
Operating Life ◽  
Gan Hemt ◽  
Electron Mobility Transistors

Abstract This paper shows a specific approach based on infrared (IR) thermography to face the challenging aspects of thermal measurement, mapping, and failure analysis on AlGaN/GaN high electron-mobility transistors (HEMTs) and MMICs. In the first part of this paper, IR thermography is used for the temperature measurement. Results are compared with 3D thermal simulations (ANSYS) to validate the thermal model of an 8x125pm AIGaN/GaN HEMT on SiC substrate. Measurements at different baseplate temperature are also performed to highlight the non-linearity of the thermal properties of materials. Then, correlations between the junction temperature and the life time are also discussed. In the second part, IR thermography is used for hot spot detection. The interest of the system for defect localization on AIGaN/GaN HEMT technology is presented through two case studies: a high temperature operating life test and a temperature humidity bias test.

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