MICROWAVE GaN-BASED POWER TRANSISTORS ON LARGE-SCALE SILICON WAFERS

2003 ◽  
Vol 13 (01) ◽  
pp. 265-275
Author(s):  
S. MANOHAR ◽  
A. PHAM ◽  
J. BROWN ◽  
R. BORGES ◽  
K. LINTHICUM
Keyword(s):  
Large Scale ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Power Transistors ◽  
Electron Mobility Transistors ◽  
Gan On Si ◽  
Gan Heterostructure

This paper presents the development of microwave Gallium nitride (GaN) heterostructure field-effect transistors (HFETs) on silicon (Si). GaN-on-Si provides a low-cost manufacturable platform that could lead to the commercialization of GaN-based power devices for wireless applications. Small periphery GaN high electron mobility transistors (HEMTs) on Si exhibited a maximum drain current of 900mA/mm, a peak gm of 300 mS/mm, and a microwave output power density of 1.5 W/mm at 2 GHz. Microwave characterization and device modeling of GaN HEMTs on Si are discussed.

scholarly journals Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 842 ◽  
Author(s):  
Myoung-Jin Kang ◽  
Hyun-Seop Kim ◽  
Ho-Young Cha ◽  
Kwang-Seok Seo
Keyword(s):  
Chemical Vapor ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Breakdown Field ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Passivation Process ◽  
Gan On Si ◽  
Sinx Film

We optimized a silicon nitride (SiNx) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiNx film exhibited a high film density of 2.7 g/cm3 with a low wet etch rate (buffered oxide etchant (BOE) 10:1) of 2 nm/min and a breakdown field of 8.2 MV/cm. The AlGaN/GaN-on-Si HEMT fabricated by the optimized Cat-CVD SiNx passivation process, which had a gate length of 1.5 μm and a source-to-drain distance of 6 μm, exhibited the maximum drain current density of 670 mA/mm and the maximum transconductance of 162 mS/mm with negligible hysteresis. We found that the optimized SiNx film had positive charges, which were responsible for suppressing the current collapse phenomenon.

scholarly journals Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Xin Chen ◽  
Jianqi Dong ◽  
Chenguang He ◽  
Longfei He ◽  
Zhitao Chen ◽  
...  
Keyword(s):  
Low Cost ◽  
High Electron Mobility Transistors ◽  
Electrical Performance ◽  
Full Potential ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Piezotronic Effect ◽  
Lift Off ◽  
Gan Heterostructure ◽  
Polyethylene Terephthalate Substrate

AbstractHigh-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. However, to unlock the full potential of HEMTs, the fabrication of large-size flexible HEMTs is required. Herein, a large-sized (> 2 cm2) of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique. The piezotronic effect was then induced to optimize the electron transport performance by modulating/tuning the physical properties of two-dimensional electron gas (2DEG) and phonons. The saturation current of the flexible HEMT is enhanced by 3.15% under the 0.547% tensile condition, and the thermal degradation of the HEMT was also obviously suppressed under compressive straining. The corresponding electrical performance changes and energy diagrams systematically illustrate the intrinsic mechanism. This work not only provides in-depth understanding of the piezotronic effect in tuning 2DEG and phonon properties in GaN HEMTs, but also demonstrates a low-cost method to optimize its electronic and thermal properties.

scholarly journals Modeling of Thermal Effects in Semiconductor Structures

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 53-58
Author(s):  
Christopher M. Snowden
Keyword(s):  
Thermal Effects ◽  
Large Scale ◽  
High Electron Mobility Transistors ◽  
Thermal Modelling ◽  
High Electron ◽  
Temperature Model ◽  
Active Devices ◽  
Electron Mobility Transistors ◽  
Fully Coupled ◽  
Scale Surface

A fully coupled electro-thermal hydrodynamic model is described which is suitable for modelling active devices. The model is applied to the non-isothermal simulation of pseudomorphic high electron mobility transistors (pHEMTs). A large-scale surface temperature model is described which allows thermal modelling of semiconductor devices and monolithic circuits. An example of the application of thermal modelling to monolithic circuit characterization is given.

AlGaN Channel HEMT with Extremely High Breakdown Voltage

2011 ◽  
Vol 1324 ◽  
Author(s):  
Takuma Nanjo ◽  
Misaichi Takeuchi ◽  
Akifumi Imai ◽  
Yousuke Suzuki ◽  
Muneyoshi Suita ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Doping Technique ◽  
Resistive Source

ABSTRACTA channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. Wider bandgap AlGaN, however, should also increase the ohmic contact resistance. Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The fabricated AlGaN channel HEMTs with the field plate structure demonstrated good pinch-off operation with sufficiently high drain current density of 0.5 A/mm without noticeable current collapse. The obtained maximum breakdown voltages was 1700 V in the AlGaN channel HEMT with the gate-drain distance of 10 μm. These remarkable results indicate that AlGaN channel HEMTs could become future strong candidates for not only high-frequency devices such as low noise amplifiers but also high-power devices such as switching applications.

Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors

2012 ◽  
Vol 5 (3) ◽  
pp. 034103
Author(s):  
Farid Medjdoub ◽  
Damien Ducatteau ◽  
Malek Zegaoui ◽  
Bertrand Grimbert ◽  
Nathalie Rolland ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Confinement ◽  
Electron Mobility Transistors ◽  
Gan On Si ◽  
Trapping Effects
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