scholarly journals Modelling of Hot Acoustic Phonon Propagation in Two Dimensional Layers

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 197-200
Author(s):  
N. A. Bannov ◽  
V. V. Mitin ◽  
F. T. Vasko

The transport of confined acoustic phonons in a flee-standing quantum well has been studied by solving the quantum kinetic equation for phonons. The phonon decay rate has been numerically calculated for GaAs flee-standing quantum well. Phonon interaction with electrons through the deformation potential makes the major contribution to the acoustic phonon decay.

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3660-3663 ◽  
Author(s):  
I.-K. OH ◽  
JAI SINGH

We present a comprehensive study of the process of exciton formation due to exciton-phonon interaction. Using the exciton-phonon interaction arising from deformation potential, piezoelectric, and polar couplings, we have calculated the rate of formation of an exciton as a function of carrier densitiies, temperatures, and center-of-mass momentum ( K ‖) in quantum wells. Our results show that excitons are dominantly formed at non-zero K ‖, which agrees very well with experiments. The formation of an exciton due to emission of longitudinal optical phonon is found to be more efficient at relatively small values of K ‖, and that due to acoustic phonon emission is more efficient at relatively large K ‖ values for carrier temperature Te-h≲50 K.


Author(s):  
Nguyen Thi Lam Quynh ◽  
Cao Thi Vi Ba ◽  
Nguyen Quang Bau

Abstract: In this paper, we have used the method of quantum kinetic equation to calculate the analytic expression for Ettingshausen coefficient (EC) under the influence of confined phonon. We considered a quantum well in the presence of constant electric field, magnetic field and electromagnetic wave (EMW) with assumption that electron – confined optical phonon (OP) scattering is essential. The EC obtained depends on many quantities in a complicated way such as temperature, magnetic field, frequency or amplitude of EMW and m - quantum number which specify confined OP. Numerical results for GaAs/GaAsAl quantum well (QW) have displayed clearly the differences in comparison with both cases of bulk semiconductor and unconfined phonon. The result of examining the EC’s dependence on magnetic field shows that quantum number m changes resonance condition; m not only makes the increase in the number of resonance peak but also changes the position of peaks. When m is set to zero, we get the results that corresponds to unconfined OP. Keywords: Quantum well, Ettingshausen effect, Quantum kinetic equation, confined optical phonons.


Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 21867-21871 ◽  
Author(s):  
Hao Long ◽  
Xiang Peng ◽  
Jianxun Lu ◽  
Kebin Lin ◽  
Liqiang Xie ◽  
...  

Exciton–phonon interaction in quasi-2D material was investigated. It was shown that longitudinal optical phonon, rather than acoustic phonon-exciton coupling dominated the enhancement of exciton–phonon coupling strength.


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