scholarly journals Simulating Quasi-ballistic Transport in Si Nanotransistors

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 5-13 ◽  
Author(s):  
Kausar Banoo ◽  
Jung-Hoon Rhew ◽  
Mark Lundstrom ◽  
Chi-Wang Shu ◽  
Joseph W. Jerome
Keyword(s):  
Numerical Simulation ◽  
Energy Transport ◽  
Ballistic Transport ◽  
Mean Free Path ◽  
Simulation Methods ◽  
Field Region ◽  
Drift Diffusion ◽  
Transport Models ◽  
Low Field ◽  
Hydrodynamic Energy

Electron transport in model Si nanotransistors is examined by numerical simulation using a hierarchy of simulation methods, from full Boltzmann, to hydrodynamic, energy transport, and drift-diffusion. The on-current of a MOSFET is shown to be limited by transport across a low-field region about one mean-free-path long and located at the beginning of the channel. Commonly used transport models based on simplified solutions of the Boltzmann equation are shown to fail under such conditions. The cause for this failure is related to the neglect of the carriers' drift energy and to the collision-dominated assumptions typically used in the development of simplified transport models.

scholarly journals Formulation of Macroscopic Transport Models for Numerical Simulation of Semiconductor Devices

VLSI Design ◽  
1995 ◽  
Vol 3 (2) ◽  
pp. 211-224 ◽  
Author(s):  
Edwin C. Kan ◽  
Zhiping Yu ◽  
Robert W. Dutton ◽  
Datong Chen ◽  
Umberto Ravaioli
Keyword(s):  
Numerical Simulation ◽  
Computational Efficiency ◽  
Recent Progress ◽  
Energy Transport ◽  
Semiconductor Devices ◽  
Boltzmann Transport Equation ◽  
Boltzmann Transport ◽  
Drift Diffusion ◽  
Thermoelectric Effects ◽  
Transport Models

According to different assumptions in deriving carrier and energy flux equations, macroscopic semiconductor transport models from the moments of the Boltzmann transport equation (BTE) can be divided into two main categories: the hydrodynamic (HD) model which basically follows Bløtekjer's approach [1, 2], and the Energy Transport (ET) model which originates from Strattton's approximation [3, 4]. The formulation, discretization, parametrization and numerical properties of the HD and ET models are carefully examined and compared. The well-known spurious velocity spike of the HD model in simple nin structures can then be understood from its formulation and parametrization of the thermoelectric current components. Recent progress in treating negative differential resistances with the ET model and extending the model to thermoelectric simulation is summarized. Finally, we propose a new model denoted by DUET (Dual ET)which accounts for all thermoelectric effects in most modern devices and demonstrates very good numerical properties. The new advances in applicability and computational efficiency of the ET model, as well as its easy implementation by modifying the conventional drift-diffusion (DD) model, indicate its attractiveness for numerical simulation of advanced semiconductor devices

scholarly journals A hierarchy of hydrodynamic models for silicon carbide semiconductors

2017 ◽  
Vol 8 (1) ◽  
pp. 251-264
Author(s):  
Orazio Muscato ◽  
Vincenza Di Stefano
Keyword(s):  
Silicon Carbide ◽  
Hydrodynamic Model ◽  
Energy Transport ◽  
Transport Coefficients ◽  
Kinetic Equations ◽  
Maximum Entropy Principle ◽  
Hydrodynamic Models ◽  
Drift Diffusion ◽  
Transport Models ◽  
Entropy Principle

Abstract The electro-thermal transport in silicon carbide semiconductors can be described by an extended hydrodynamic model, obtained by taking moments from kinetic equations, and using the Maximum Entropy Principle. By performing appropriate scaling, one can obtain reduced transport models such as the Energy transport and the drift-diffusion ones, where the transport coefficients are explicitly determined.

scholarly journals Analysis of numerical schemes for semiconductor energy-transport models

2021 ◽  
Author(s):  
Marianne Bessemoulin-Chatard ◽  
Claire Chainais-Hillairet ◽  
Hélène Mathis
Keyword(s):  
Energy Transport ◽  
Numerical Schemes ◽  
Transport Models

DISCRETIZATION METHOD OF HYDRODYNAMIC EQUATIONS FOR SIMULATION OF GaN MESFETs

2008 ◽  
Vol 22 (16) ◽  
pp. 1599-1608
Author(s):  
M. REZAEE ROKN-ABADI ◽  
H. ARABSHAHI ◽  
M. R. BENAM
Keyword(s):  
Experimental Methods ◽  
Two Dimensions ◽  
Balance Model ◽  
Discretization Method ◽  
Hydrodynamic Equations ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Transport Models ◽  
Wurtzite Phase ◽  
Inertia Effects

A finite discretization method in two dimensions has been developed and used to model electron transport in wurtzite phase GaN MESFETs. The model is based on the solutions of the highly-coupled nonlinear hydrodynamic partial differential equations. These solutions allow us to calculate the electron drift velocity and other device parameters as a function of the applied electric field. This model is able to describe inertia effects which play an increasing role in different fields of micro and optoelectronics where simplified charge transport models like drift-diffusion model and energy balance model are no longer applicable. Results of numerical simulations are shown for a two-dimensional GaN MESFET device which are in fair agreement with other theoretical or experimental methods.

scholarly journals Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 169-173
Author(s):  
J. R. Watling ◽  
Y. P. Zhao ◽  
A. Asenov ◽  
J. R. Barker
Keyword(s):  
Ballistic Transport ◽  
Deep Submicron ◽  
Hole Transport ◽  
Recent Experimental Data ◽  
Drift Diffusion ◽  
Performance Gap ◽  
Performance Potentials ◽  
Transport Effects ◽  
And Performance ◽  
Non Equilibrium

As MOSFETs are scaled to deep submicron dimensions non-equilibrium, near ballistic, transport in p-MOSFETs becomes important. Recent experimental data indicates that as MOSFETs are scaled the performance gap between n and p-channel shrinks. Nonequilibrium transport effects and performance potentials of ‘Well Tempered’ Si p- MOSFETs with gate lengths of 50 and 25 nm are studied. Monte Carlo and calibrated Drift Diffusion simulations of these devices provide a quantitative estimate of the importance and the influence of non-equilibrium transport on submicron device performance. A possible explanation for the closing performance gap between n- and p-channel MOSFETs is offered.

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