Enhanced Photoelectrochemical Response of Zn-Dotted Hematite
2007 ◽
Vol 2007
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pp. 1-6
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Keyword(s):
Band Gap
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Photoelectrochemical response of thin films ofα-Fe2O3, Zn dopedα-Fe2O3, and Zn dots deposited on dopedα-Fe2O3prepared by spray pyrolysis has been studied. Samples of Zn dots were prepared using thermal evaporation method by evaporating Zn through a mesh having pore diameter of 0.7 mm. The presence of Zn-dotted islands on dopedα-Fe2O3surface exhibited significantly large photocurrent density as compared to other samples. An optimum thickness of Zn dots∼230 Å is found to give enhanced photoresponse. The observed results are analyzed with the help of estimated values of resistivity, band gap, flatband potential, and donor density.