scholarly journals Thin-Film Solar Cells Based on the Polycrystalline Compound Semiconductors CIS and CdTe

2007 ◽  
Vol 2007 ◽  
pp. 1-6 ◽  
Author(s):  
Michael Powalla ◽  
Dieter Bonnet
Keyword(s):  
Thin Film ◽  
Low Cost ◽  
Single Cells ◽  
Large Area ◽  
Photovoltaic Modules ◽  
Solar Conversion ◽  
Module Performance ◽  
Conversion Efficiencies ◽  
Near Future

Thin-film photovoltaic modules based on Cu-In-Ga-Se-S (CIS) and CdTe are already being produced with high-quality and solar conversion efficiencies of around 10%, with values up to 14% expected in the near future. The integrated interconnection of single cells into large-area modules of 0.6×1.2m2 enables low-cost mass production, so that thin-film modules will soon be able to compete with conventional silicon-wafer-based modules. This contribution provides an overview of the basic technologies for CdTe and CIS modules, the research and development (R&D) issues, production technology and capacities, the module performance in long-term outdoor testing, and their use in installations.

scholarly journals Analysis of thin film photovoltaic modules under outdoor long term exposure in semi-arid climate conditions

Solar Energy ◽  
2017 ◽  
Vol 157 ◽  
pp. 587-595 ◽  
Author(s):  
Ali Tahri ◽  
Santiago Silvestre ◽  
Fatima Tahri ◽  
Soumia Benlebna ◽  
Aissa Chouder
Keyword(s):  
Thin Film ◽  
Arid Climate ◽  
Climate Conditions ◽  
Photovoltaic Modules ◽  
Semi Arid

Flexible, Monolithically Integrated Cu(In,Ga)Se2 Thin-Film Solar Modules

2005 ◽  
Vol 865 ◽  
Author(s):  
Dirk Herrmann ◽  
Friedrich Kessler ◽  
Ulf Klemm ◽  
Robert Kniese ◽  
Theresa Magorian Friedlmeier ◽  
...  
Keyword(s):  
Thin Film ◽  
Production Process ◽  
Low Cost ◽  
Single Cells ◽  
Production Method ◽  
Flexible Substrates ◽  
Metal Foil ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Roll To Roll

AbstractCIGS (Cu(In,Ga)Se2) thin-film solar modules on glass substrates are currently on the verge of commercialization. Entirely new application areas could be accessed with CIGS modules fabricated on thin and flexible non-glass substrates. Additionally, the roll-to-roll manufacturing of such flexible CIGS modules promises to be a low-cost production method. Different external Na supply methods and a vacuum-deposited buffer were investigated in this contribution, a sample of the challenges we face when modifying the standard, industrial CIGS module production process to the particular requirements of flexible substrates. Both metal foil substrates and polymer films are considered. Our excellent best results of above 14 % for single cells on titanium, more than 11% on polyimide, and around 7 % for modules on both substrates indicate our progress in developing flexible CIGS.

scholarly journals Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure

Data in Brief ◽  
2016 ◽  
Vol 7 ◽  
pp. 366-371 ◽  
Author(s):  
Sofiane Kichou ◽  
Santiago Silvestre ◽  
Gustavo Nofuentes ◽  
Miguel Torres-Ramírez ◽  
Aissa Chouder ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Behavioral Data ◽  
Single Junction ◽  
Photovoltaic Modules

An alternative method for spectral response measurements of large-area thin-film photovoltaic modules

2011 ◽  
Vol 20 (4) ◽  
pp. 416-422 ◽  
Author(s):  
Mauro Pravettoni ◽  
Anika Komlan ◽  
Roberto Galleano ◽  
Harald Müllejans ◽  
Ewan D. Dunlop
Keyword(s):  
Thin Film ◽  
Spectral Response ◽  
Large Area ◽  
Photovoltaic Modules ◽  
Alternative Method

HfZnO/ZnO Heterostructures Fabricated Using Low-Cost Large-Area Compatible Sputtering Processes

2015 ◽  
Vol 1731 ◽  
Author(s):  
Chih-Hung Li ◽  
Jian-Zhang Chen ◽  
I-Chun Cheng
Keyword(s):  
Thin Film ◽  
Electrical Resistance ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Annealing Temperature ◽  
Low Cost ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Large Area ◽  
Apparent Decrease

ABSTRACTWe investigated the electrical properties of the rf-sputtered HfxZn1-xO/ZnO heterostructures. The thermal annealing on ZnO prior to the HfxZn1-xO deposition greatly influences the properties of the heterostructures. A highly conductive interface formed at the interface between HfxZn1-xO and ZnO thin films as the ZnO annealing temperature exceeded 500°C, leading to the apparent decrease of the electrical resistance. The resistance decreased with an increase of either thickness or Hf content of the HfxZn1-xO capping layer. The Hf0.05Zn0.95O/ZnO heterostructure with a 200-nm-thick 600°C-annealed ZnO exhibits a carrier mobility of 14.3 cm2V-1s-1 and a sheet carrier concentration of 1.93×1013 cm-2; the corresponding values for the bare ZnO thin film are 0.47 cm2V-1s-1 and 2.27×1012 cm-2, respectively. Rf-sputtered HfZnO/ZnO heterostructures can potentially be used to increase the carrier mobility of thin-film transistors in large-area electronics.

scholarly journals Pentacene Active Channel Layers Prepared by Spin-Coating and Vacuum Evaporation Using Soluble Precursors for OFET Applications

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Shizuyasu Ochiai ◽  
Kumar Palanisamy ◽  
Santhakumar Kannappan ◽  
Paik-Kyun Shin
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Spin Coating ◽  
Dielectric Layer ◽  
Gate Dielectric ◽  
Low Cost ◽  
Vacuum Evaporation ◽  
Large Area ◽  
Process Technology ◽  
Active Channel

Pentacene OFETs of bottom-gate/bottom-contact were fabricated with three types of pentacene organic semiconductors and cross linked Poly(4-vinylphenol) or polycarbonate as gate dielectric layer. Two different processes were used to prepare the pentacene active channel layers: (1) spin-coating on dielectric layer using two different soluble pentacene precursors of SAP and DMP; (2) vacuum evaporation on PC insulator. X-ray diffraction studies revealed coexistence of thin film and bulk phase of pentacene from SAP and thin film phase of pentacene from DMP precursors. The field effect mobility of 0.031 cm2/Vs and threshold voltage of −12.5 V was obtained from OFETs fabricated from SAP precursor, however, the pentacene OFETs from DMP under same preparation yielded high mobility of 0.09 cm2/Vs and threshold value decreased to −5 V. It reflects that the mixed phase films had carrier mobilities inferior to films consisting solely of single phase. For comparison, we have also fabricated pentacene OFETs by vacuum evaporation on polycarbonate as the gate dielectric and obtained charge carrier mobilities as large as 0.62 cm2/Vs and threshold voltage of −8.5 V. We demonstrated that the spin-coated pentacene using soluble pentacene precursors could be alternative process technology for low cost, large area and low temperature fabrication of OFETs.

Direct observation of continuous networks of ‘sol–gel’ processed metal oxide thin film for organic and perovskite photovoltaic modules with long-term stability

2020 ◽  
Vol 8 (36) ◽  
pp. 18659-18667
Author(s):  
Soonil Hong ◽  
Geunjin Kim ◽  
Byoungwook Park ◽  
Ju-Hyeon Kim ◽  
Junghwan Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Photovoltaic Modules ◽  
Long Term Stability ◽  
Metal Oxide Thin Film ◽  
Continuous Metal ◽  
Perovskite Photovoltaic

Continuous metal oxygen networks of TiOx are formed on top of organic semiconductors with favorable surface energy, which prolong T80-lifetime for organic and perovskite modules up to more than 2000 hours.

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