Synthesis and Characterization of Sodium Bis(2-ethylhexyl) Sulfonsuccinate (AOT) Capped Pure and Mn-Doped CdS Nanoparticles

CdS nanoparticles and thin films are well known for their excellent semiconducting properties. When transition metal ions are doped into the CdS, it exhibits magnetic properties in addition to semiconducting properties and they are termed as dilute magnetic semiconductors (DMSs). In this paper, we discuss the preparation of sodium bis(2-ethylhexyl) sulfonsuccinate (AOT) capped CdS nanoparticles and thin films doped with magnetic impurity Mn. Sodium bis(2-ethulexyl) sulfonsuccinate (AOT), capping agent promotes the uniform formation of nanoparticles. Optical characterizations are made using the UV-Vis spectrometer, PL, and FTIR. XRD shows the hexagonal structure of the CdS. SEM images and EDS measurements were made for the thin films. EPR shows the clear hyperfine lines corresponding to Mn2+ion in the CdS nanoparticles.

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Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method

Microscopy Research and Technique ◽

10.1002/jemt.22226 ◽

2013 ◽

Vol 76 (7) ◽

pp. 751-755 ◽

Cited By ~ 2

Author(s):

Subramanian Balamurali ◽

Rathinam Chandramohan ◽

Marimuthu Karunakaran ◽

Thayan Mahalingam ◽

Padmanaban Parameswaran ◽

...

Keyword(s):

Thin Films ◽

Magnetic Semiconductors ◽

Dilute Magnetic Semiconductors ◽

Reaction Method ◽

Adsorption Reaction ◽

Morphological Variations ◽

Doped Zno ◽

Mn Doped ◽

Ionic Layer

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Magnetic Properties of Mn-doped SnO2 Thin Films Prepared by the Sol-Gel Dip Coating Method for Dilute Magnetic Semiconductors

Journal of the American Ceramic Society ◽

10.1111/jace.13084 ◽

2014 ◽

Vol 97 (10) ◽

pp. 3184-3191 ◽

Cited By ~ 16

Author(s):

Sivashankaran Nair Sujatha Lekshmy ◽

Vijayam Sukumaran Nair Anitha ◽

PuthenKadathil Vargehese Thomas ◽

Kunjkunju Joy

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Magnetic Semiconductors ◽

Sol Gel ◽

Dilute Magnetic Semiconductors ◽

Dip Coating ◽

Coating Method ◽

Sno2 Thin Films ◽

Dip Coating Method ◽

Mn Doped

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Effect of Substrate Variation on Electrical and Magnetic Properties of Mn Doped ZnO of Dilute Magnetic Semiconductors

MRS Proceedings ◽

10.1557/proc-0891-ee10-07 ◽

2005 ◽

Vol 891 ◽

Author(s):

Srikanth Manchiraju ◽

Govind Mundada ◽

Ted Kehl ◽

Craig Vera ◽

Rishi Patel ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Single Crystal ◽

Magnetic Semiconductors ◽

Dilute Magnetic Semiconductors ◽

X Ray Diffraction ◽

X Ray ◽

Electrical And Magnetic Properties ◽

Quartz Substrates ◽

Mn Doped

ABSTRACTIn this paper, the effect of substrate on the domain structure growth and electrical and magnetic properties of epitaxial Mn-doped Zn0.8Mn0.15O (ZnMnO) thin films has been investigated. Epitaxial thin films of ZnMnO dilute magnetic semiconductors (DMS) were grown on various substrates such as single crystal sapphire, single crystal silicon, and quartz substrates using Pulsed Laser Deposition (PLD) technique . Structural, surface, magnetic, and optical properties have been observed on these films using X-Ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), and Raman spectroscopy. X-Ray Diffraction shows that films are highly epitaxial and c-axis oriented with some induced strain. AFM images show that film surface is smooth with RMS roughness of the order of 1-2 nm over 5*5sq.micron. Magnetic characteristic properties such as carrier concentration, mobility, and temperature dependent resistivity were also investigated. Carrier concentration decreases and mobility increases for both the films on silicon and quartz substrates when compared to film on sapphire.

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Fabrication of Ultra Thick Ferromagnetic Structures in Silicon

Microelectromechanical Systems ◽

10.1115/imece2004-61909 ◽

2004 ◽

Cited By ~ 1

Author(s):

Debbie G. Jones ◽

Albert P. Pisano

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Scanning Electron Microscopy ◽

Saturation Magnetization ◽

Silicon Wafer ◽

Fabrication Process ◽

Sem Images ◽

Deep Reactive Ion Etching ◽

Scanning Electron

A novel fabrication process is presented to create ultra thick ferromagnetic structures in silicon. The structures are fabricated by electroforming NiFe into silicon templates patterned with deep reactive ion etching (DRIE). Thin films are deposited into photoresist molds for characterization of an electroplating cell. Results show that electroplated films with a saturation magnetization above 1.6 tesla and compositions of approximately 50/50 NiFe can be obtained through agitation of the electrolyte. Scanning electron microscopy (SEM) images show that NiFe structures embedded in a 500 μm thick silicon wafer are realized and the roughening of the mold sidewalls during the DRIE aids in adhesion of the NiFe to the silicon.

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Characterization of n-GaN dilute magnetic semiconductors by cobalt ions implantation at high-fluence

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2011.09.021 ◽

2012 ◽

Vol 324 (5) ◽

pp. 797-801 ◽

Cited By ~ 7

Author(s):

G. Husnain ◽

Yao Shu-De ◽

Ishaq Ahmad ◽

H.M. Rafique ◽

Arshad Mahmood

Keyword(s):

Magnetic Semiconductors ◽

Dilute Magnetic Semiconductors ◽

High Fluence ◽

Cobalt Ions ◽

Ions Implantation

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Preparation and Characterization of Zn1-XMnxO Thin Films on SiO2 Substrates

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.560-561.820 ◽

2012 ◽

Vol 560-561 ◽

pp. 820-824

Author(s):

Yue Zhi Zhao ◽

Fei Xiong ◽

Guo Mian Gao ◽

Shi Jing Ding

Keyword(s):

Thin Films ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

X Ray Diffraction ◽

Flat Surfaces ◽

Atomic Force ◽

Mn Content ◽

Doped Zno ◽

Mn Doped

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.

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Manganese-Doped CdGeAs2, ZnGeAs2 and ZnSiAs2 Chalcopyrites: A New Advanced Materials for Spintronics

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.168-169.31 ◽

2010 ◽

Vol 168-169 ◽

pp. 31-34 ◽

Cited By ~ 3

Author(s):

A.S. Morozov ◽

L.A. Koroleva ◽

D.M. Zashchirinskii ◽

T.M. Khapaeva ◽

S.F. Marenkin ◽

...

Keyword(s):

Room Temperature ◽

Magnetic Semiconductors ◽

Dilute Magnetic Semiconductors ◽

Charge Carriers ◽

Advanced Materials ◽

Temperature Dependences ◽

P Type ◽

Mn Doped ◽

Curie Temperatures ◽

Exchange And Superexchange Interactions

Based on the Mn-doped chalcopyrites CdGeAs2, ZnGeAs2 and ZnSiAs2, new dilute magnetic semiconductors with the p-type conductivity were produced. Magnetization, electrical resistivity and Hall effect of these compositions were studied. Their temperature dependences of magnetization are similar in form in spite of a complicated character, which is controlled by the concentration and mobility of the charge carriers. Thus, for T < 15 K, these curves are characteristic of superparamagnets and for T > 15 K, of a frustrated ferromagnet. In compounds with Zn these two states are diluted by a spinglass-like state. This specific feature is ascribed to attraction of Mn ions occupying neighboring sites and to competition between the carrier-mediated exchange and superexchange interactions. The Curie temperatures of these compounds are above room temperature. These are the highest Curie temperatures in the AIIBIVCV2:Mn systems.

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