scholarly journals A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2and SF6/O2

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Seon-Geun Oh ◽  
Kwang-Su Park ◽  
Young-Jun Lee ◽  
Jae-Hong Jeon ◽  
Hee-Hwan Choe ◽  
...  
Keyword(s):  
Etch Rate ◽  
Gas Flow ◽  
Optical Emission ◽  
Process Conditions ◽  
Square Root ◽  
Dual Frequency ◽  
Capacitively Coupled ◽  
Atomic Fluorine ◽  
Gas Flow Ratio ◽  
Etch Rates

The characteristics of the dry etching ofSiNx:H thin films for display devices using SF6/O2and NF3/O2were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE) system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz), pressure, and gas flow ratio. For theSiNx:H film, the etch rates obtained using NF3/O2were higher than those obtained using SF6/O2under various process conditions. The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES) intensity of atomic fluorine (685.1 nm and 702.89 nm) and the voltagesVHandVL—were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine(I(F))and the square root of the voltages(Vh+Vl)on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.

Studies on the Surface Modification of Benzocyclobutene(BCB) Film By Plasma Ions

1990 ◽  
Vol 203 ◽  
Author(s):  
Kyung W. Paik ◽  
Richard J. Saia ◽  
John J. Chera
Keyword(s):  
Etch Rate ◽  
Plasma Modification ◽  
Surface Chemical ◽  
Ion Sputtering ◽  
Plasma Ions ◽  
Surface Chemical Composition ◽  
Atomic Fluorine ◽  
Oxygen Gas ◽  
Compositional Changes ◽  
Etch Rates

ABSTRACTThe etch rates of BCB film in a reactive ion etcher(RIE) were measured using Ar, O2, O2+CF4, and O2+SF6 gas mixtures. Faster etch rates were obtained when CF4 and SF6 were added to oxygen, since the presence of atomic fluorine enhances the etch rate of organics, while also etching Si and SiO2 formed by exposure to oxygen gas. Surface compositional changes on the BCB film were observed by XPS after plasma modification. Pure O2 and O2+CF4 plasma oxidized the carbo-siloxane linkage (C-Si-O) of the BCB, resulting in the formation of SiO2 on the surface. The O2 +SF6 plasma, however, did not produce the surface SiO2, because of its faster Si and SiO2 etch rates. Ar ion sputtering following the plasma modification, restored the surface chemical composition to a state similar to the initial BCB surface.

Analysis of optical emission spectroscopy in a dual-frequency capacitively coupled CHF3 plasma

2009 ◽  
Vol 16 (4) ◽  
pp. 043509 ◽  
Author(s):  
Xiao-Jiang Huang ◽  
Yu Xin ◽  
Lei Yang ◽  
Chao Ye ◽  
Qiang-Hua Yuan ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Dual Frequency ◽  
Capacitively Coupled

CHF 3 Dual-Frequency Capacitively Coupled Plasma by Optical Emission Spectroscopy

2008 ◽  
Vol 25 (8) ◽  
pp. 2942-2945 ◽  
Author(s):  
Xu Yi-Jun ◽  
Ye Chao ◽  
Huang Xiao-Jiang ◽  
Yuan Jing ◽  
Xing Zhen-Yu ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Dual Frequency ◽  
Capacitively Coupled ◽  
Capacitively Coupled Plasma

scholarly journals Synthesis of ultrasmooth nanostructured diamond films by microwave plasma chemical vapor deposition using a He/H2/CH4/N2gas mixture

2006 ◽  
Vol 21 (10) ◽  
pp. 2675-2682 ◽  
Author(s):  
S. Chowdhury ◽  
Damon A. Hillman ◽  
Shane A. Catledge ◽  
Valery V. Konovalov ◽  
Yogesh K. Vohra
Keyword(s):  
Gas Flow ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Optical Emission ◽  
X Ray Diffraction ◽  
Plasma Chemical Vapor Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gas Flow Ratio

Ultrasmooth nanostructured diamond (USND) films were synthesized on Ti–6Al–4V medical grade substrates by adding helium in H2/CH4/N2plasma and changing the N2/CH4gas flow from 0 to 0.6. We were able to deposit diamond films as smooth as 6 nm (root-mean-square), as measured by an atomic force microscopy (AFM) scan area of 2 μm2. Grain size was 4–5 nm at 71% He in (H2+ He) and N2/CH4gas flow ratio of 0.4 without deteriorating the hardness (∼50–60 GPa). The characterization of the films was performed with AFM, scanning electron microscopy, x-ray diffraction (XRD), Raman spectroscopy, and nanoindentation techniques. XRD and Raman results showed the nanocrystalline nature of the diamond films. The plasma species during deposition were monitored by optical emission spectroscopy. With increasing N2/CH4feedgas ratio (CH4was fixed) in He/H2/CH4/N2plasma, a substantial increase of CN radical (normalized by Balmer Hαline) was observed along with a drop in surface roughness up to a critical N2/CH4ratio of 0.4. The CN radical concentration in the plasma was thus correlated to the formation of ultrasmooth nanostructured diamond films.

ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures

1996 ◽  
Vol 1 ◽  
Author(s):  
Bedwyr Humphreys ◽  
Matthew Govett
Keyword(s):  
Etch Rate ◽  
Gas Flow ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Group V ◽  
Group Iii ◽  
Ecr Plasma ◽  
Selective Etch ◽  
Process Chemistry ◽  
Gas Flow Ratio

A room temperature (RT) plasma etch process has been developed to non-selectively etch GaN/InGaN/AlGaN structures, grown on sapphire substrates, using an electron cyclotron resonance (ECR) plasma source with RIE enhancement. The process chemistry chosen was Cl2/CH4 based in order to facilitate the formation of volatile etch by-products, typically to form group III halides and group V hydrides, although indium is more likely to form an organo-metallic compound as opposed to a chloride. A characteristic of this process is the very smooth sidewall features obtained and the controllability of the etch profile via ECR power, table bias and/or gas flow ratio. Typical results obtained using a RT process were etch rate above 100 nm/min., selectivity to resist mask above 30:1 and smooth anisotropic profile at low ion-energies (below 100 eV). The process etch rate showed a characteristic increase with increasing table bias (above 130 nm/min.) with only small changes in the relative etch rate of each compound (i.e. selectivity maintained at roughly 1:1), however, this etch does rely upon competing etching and deposition mechanisms and thus too large a variation in one parameter without a corresponding compensation with another leads to a rough surface and a more selective etch. The process has also been demonstrated using a metal mask (e.g. Ni) and present work is progressing onto other gas combinations and the use of high temperature electrodes.

scholarly journals Phase resolved optical emission spectroscopy of dual frequency capacitively coupled plasma

2013 ◽  
Vol 62 (20) ◽  
pp. 205208
Author(s):  
Du Yong-Quan ◽  
Liu Wen-Yao ◽  
Zhu Ai-Min ◽  
Li Xiao-Song ◽  
Zhao Tian-Liang ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Dual Frequency ◽  
Capacitively Coupled ◽  
Capacitively Coupled Plasma

Reactive ion Etching of Pt/PbZrxTi1−xO3/Pt Integrated Ferroelectric Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
J.J. Van Glabbeek ◽  
G.A.C.M. Spierings ◽  
M.J.E. Ulenaers ◽  
G.J.M. Dormans ◽  
P.K. Larsen
Keyword(s):  
Etch Rate ◽  
Gas Flow ◽  
Reactive Ion Etching ◽  
Flow Ratio ◽  
Ion Etching ◽  
Ferroelectric Capacitor ◽  
Chemical Enhancement ◽  
Gas Flow Ratio ◽  
Ar Gas ◽  
Ferroelectric Capacitors

AbstractDry etching of a Pt/PbZrxTi1−xO3/Pt (Pt/PZT/Pt) ferroelectric capacitor stack with CF4/Ar plasmas with a reactive ion etching process for the fabrication of micrometer-sized integrated ferroelectric capacitors is described. The etch rate for both Pt and PZT is determined as a function of the process settings: Power, pressure and CF4-Ar gas flow ratio. A chemical enhancement of the etch rate is found for PZT. It is shown that it is possible to etch the Pt/PZT/Pt ferroelectric capacitor stack in a CF4/Ar plasma in a single lithographic process using patterning by photoresist masking. Redeposition processes occurring during etching are described.

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