Studies on the Surface Modification of Benzocyclobutene(BCB) Film By Plasma Ions

1990 ◽  
Vol 203 ◽  
Author(s):  
Kyung W. Paik ◽  
Richard J. Saia ◽  
John J. Chera
Keyword(s):  
Etch Rate ◽  
Plasma Modification ◽  
Surface Chemical ◽  
Ion Sputtering ◽  
Plasma Ions ◽  
Surface Chemical Composition ◽  
Atomic Fluorine ◽  
Oxygen Gas ◽  
Compositional Changes ◽  
Etch Rates

ABSTRACTThe etch rates of BCB film in a reactive ion etcher(RIE) were measured using Ar, O2, O2+CF4, and O2+SF6 gas mixtures. Faster etch rates were obtained when CF4 and SF6 were added to oxygen, since the presence of atomic fluorine enhances the etch rate of organics, while also etching Si and SiO2 formed by exposure to oxygen gas. Surface compositional changes on the BCB film were observed by XPS after plasma modification. Pure O2 and O2+CF4 plasma oxidized the carbo-siloxane linkage (C-Si-O) of the BCB, resulting in the formation of SiO2 on the surface. The O2 +SF6 plasma, however, did not produce the surface SiO2, because of its faster Si and SiO2 etch rates. Ar ion sputtering following the plasma modification, restored the surface chemical composition to a state similar to the initial BCB surface.

scholarly journals A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2and SF6/O2

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Seon-Geun Oh ◽  
Kwang-Su Park ◽  
Young-Jun Lee ◽  
Jae-Hong Jeon ◽  
Hee-Hwan Choe ◽  
...  
Keyword(s):  
Etch Rate ◽  
Gas Flow ◽  
Optical Emission ◽  
Process Conditions ◽  
Square Root ◽  
Dual Frequency ◽  
Capacitively Coupled ◽  
Atomic Fluorine ◽  
Gas Flow Ratio ◽  
Etch Rates

The characteristics of the dry etching ofSiNx:H thin films for display devices using SF6/O2and NF3/O2were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE) system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz), pressure, and gas flow ratio. For theSiNx:H film, the etch rates obtained using NF3/O2were higher than those obtained using SF6/O2under various process conditions. The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES) intensity of atomic fluorine (685.1 nm and 702.89 nm) and the voltagesVHandVL—were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine(I(F))and the square root of the voltages(Vh+Vl)on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.

Foreign Gas Effect upon Excimer Laser Ablation of Polymer

1990 ◽  
Vol 191 ◽  
Author(s):  
N. Shimo ◽  
T. Uchida ◽  
H. Masuhara
Keyword(s):  
Surface Modification ◽  
Laser Ablation ◽  
Etch Rate ◽  
Polymer Surface ◽  
Active Surface ◽  
Inert Gases ◽  
Surface Chemical ◽  
Excimer Laser Ablation ◽  
Surface Chemical Composition ◽  
Gas Effect

ABSTRACTWe have examined effect of foreign gas and its pressure upon etch rate, surface morphology, and surface chemical composition. Etch rate is suppressed by adding inert gases such as argon and helium. On the contrary, oxygen enhances the rate by increasing its pressure, indicating that oxygen molecules react with ablated polymer surface. From the results of XPS analyses, active surface of ablated polymer reacts also with ammonia and hexamethyldisilane. It is considered that laser ablation has a high potentiality of simultaneous microfabrication and photochemical surface modification of polymer.

Chemically Assisted Ion Beam Etching of SiGe

1990 ◽  
Vol 204 ◽  
Author(s):  
O.J. Glembocki ◽  
S.M. Prokes ◽  
R.E. Stahlbush
Keyword(s):  
Etch Rate ◽  
Rate Increase ◽  
Ion Beam ◽  
Epitaxial Films ◽  
Chemical Effect ◽  
Ion Sputtering ◽  
Ion Beam Etching ◽  
Etch Rates ◽  
Background Gas

ABSTRACTChemically assisted ion beam etching (CAIBE) of Si1−Gex films is reported. Ar+ ion sputtering in the presence of Cl2 background gas has been used to etch epitaxial films of Si1−xGex, with x ranging between 0 and 0.5. It is found that Si1−xGex, sputters more rapidly than Si, but less than Ge. The use of C12 gas enhances the sputter rates of SiGe as in the case of Si. Analysis of the etch rates indicates that the etch rate increase is due to an enhancement of the sputtering process, rather than a chemical effect.

Argon Plasma Induced Surface Modifications For Resistless Patterning Of Aluminium Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Neeta Agrawal ◽  
R. D. Tarey ◽  
K. L. Chopra
Keyword(s):  
Etch Rate ◽  
Argon Plasma ◽  
Surface Modifications ◽  
Surface Chemical ◽  
Plasma Exposure ◽  
X Ray ◽  
Aluminium Fluoride ◽  
A New Technique ◽  
Plasma Exposure Time ◽  
Surface Chemical Modification

ABSTRACTArgon plasma exposure has been used to induce surface chemical modification of aluminium thin films, causing a drastic change in etch rate in standard HNO3/CH3COOH/H3PO4 etchant. The inhibition period was found to increase with power and Ar plasma exposure time. Auger electron and x-ray photoelectron spectroscopies have indicated formation of an aluminium fluoride (AlF3) surface layer due to fluorine contamination originating from the residue left in the plasma chamber during CF4 processing. The high etch selectivity between unexposed and argon plasma exposed regions has been exploited as a new technique for resistless patterning of aluminium.

scholarly journals Spectra of M Dwarfs - Dimmed by Dust

1998 ◽  
Vol 11 (1) ◽  
pp. 439-440
Author(s):  
T. Tsuji ◽  
K. Ohnaka ◽  
W. Aoki ◽  
H.R.A. Jones
Keyword(s):  
Chemical Composition ◽  
Brown Dwarfs ◽  
Surface Chemical ◽  
Basic Information ◽  
M Dwarfs ◽  
Surface Chemical Composition ◽  
Molecular Lines ◽  
Low Mass

Spectra of M dwarfs are rich in atomic and molecular lines. These spectra provide such basic information as Teff (or radius), log g (or mass), surface chemical composition, and something more (e.g. activity) if properly interpreted. It is recognized, however, that spectra of M dwarfs are already dimmed by the dust formed in their photospheres (Tsuji et al. 1996a) and this effect, which has been overlooked until recently, should be taken into account in any interpretation and analysis of the spectra of very low mass objects (VLMOs) including late M dwarfs and brown dwarfs.

scholarly journals Surface Texture of Microcrystalline Tunnel-Structured Manganese(IV) Oxides: Nitrogen Sorptiometry and Electron Microscopy Studies

2002 ◽  
Vol 20 (7) ◽  
pp. 619-632 ◽  
Author(s):  
A.A. Ali ◽  
F.A. Al-Sagheer ◽  
M.I. Zaki
Keyword(s):  
Electron Microscopy ◽  
Chemical Composition ◽  
Surface Texture ◽  
Particle Morphology ◽  
High Resolution Electron Microscopy ◽  
Surface Chemical ◽  
Hydrothermal Conditions ◽  
X Ray ◽  
Surface Chemical Composition ◽  
Resolution Electron

Three different modifications of manganese(IV) oxide, viz. cryptomelane, nsutite and todorokite-like, were synthesized by hydrothermal methods. The bulk chemical composition, phase composition, crystalline structure and particle morphology of the resulting materials were determined by thermogravimetry, atomic absorption spectroscopy, X-ray diffractometry, infrared spectroscopy and scanning electron microscopy. The surface chemical composition, texture and structure were assessed using X-ray photoelectron microscopy, nitrogen sorptiometry and high-resolution electron microscopy. The results highlighted the hydrothermal conditions under which such tunnel-structured modifications of manganese(IV) oxide can be successfully synthesized. Moreover, they revealed that (i) the bulk was microcrystalline, (ii) the crystallites were either fibrils (cryptomelane and nsutite) or rod-like (todorokite) with low-index exposed facets, (iii) the surface chemical composition mostly reflected that of the bulk and (iv) the surface texture was linked with high specific areas, slit-shaped mesopores associated with particle interstices and micropores which allowed surface accessibility to the bulk tunnels of the test oxides. The application of such test oxides as shape-selective oxidation catalysts appears worthy of investigation.

scholarly journals Abrasion Resistance of Superhydrophobic Coatings on Aluminum Using PDMS/SiO2

Coatings ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 414 ◽  
Author(s):  
Divine Sebastian ◽  
Chun-Wei Yao ◽  
Ian Lian
Keyword(s):  
Silica Nanoparticles ◽  
Abrasion Resistance ◽  
Functionalized Silica ◽  
Surface Chemical ◽  
X Ray ◽  
Force Microscopy ◽  
Surface Chemical Composition ◽  
Superhydrophobic Coatings ◽  
Atomic Force ◽  
High Contact Angle

Superhydrophobic coatings have shown tremendous improvement in the usability of metals such as aluminum. These coatings are capable of adding attractive features such as self-cleaning, anti-corrosion, and anti-biofouling to the array of diverse features that aluminum possesses, including lightweight and high ductility. For superhydrophobic surfaces, having considerable abrasion resistance is as important as achieving a high contact angle. In this work, two types of coatings have been prepared, each composed of functionalized silica nanoparticles along with polydimethylsiloxane (PDMS) dispersed in ethanol, and their superhydrophobicity and abrasion characteristics have been investigated. The same silica nanoparticles are present in each coating, but each has a different proportion of the PDMS base to its curing agent. The surface morphology of the coatings was studied with the aid of a scanning electron microscope (SEM) and an atomic force microscope (AFM). The surface chemical composition was characterized using an energy dispersive X-ray spectroscope (EDX). The prepared coatings were analyzed for their degree of superhydrophobicity, abrasion resistance and adhesion characteristics. In addition, atomic force microscopy was used to understand the adhesion characteristics of the coatings.

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