scholarly journals Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x 0 ≤ x ≤ 1 Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
A. S. Saidov ◽  
D. V. Saparov ◽  
Sh.N. Usmonov ◽  
A. Kutlimratov ◽  
J.M. Abdiev ◽  
...  
Keyword(s):  
Solid Solution ◽  
Epitaxial Layer ◽  
Crystallographic Orientation ◽  
Photoluminescence Spectrum ◽  
Gallium Phosphide ◽  
Energy Levels ◽  
Structural Features ◽  
Epitaxial Films ◽  
Electron Transitions ◽  
Semiconductor Compounds

Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt. Such graded-gap solid solutions allow the integration of well-established silicon technology with the advantages of III-V semiconductor compounds. The structural features, the distribution of the atoms of the components over the thickness of the epitaxial layer, the photoluminescence spectrum of the (Si2)1-x(GaP)x (0 ≤ x ≤ 1) solid solution, and the electroluminescence of the structure n-GaP-n+-(Si2)x (GaP)1-x (0 ≤ x ≤ 0.01) have been investigated. It is shown that the layers of the solid solution have a perfect single-crystal structure with the crystallographic orientation (111), with the size of subcrystallites ∼ 39 ± 1 nm. The epitaxial layer (Si2)1-x(GaP)x (0 ≤ x ≤ 1) is a graded-gap layer with a smoothly and monotonically varying composition from silicon to 100% GaP. The energy levels of atoms of Si2 molecules which are located 1.47 eV below the bottom of the conduction band of gallium phosphide are revealed. Red emission of n-GaP-n+-(Si2)x(GaP)1-x (0 ≤ x ≤ 0.01) structure which is caused by electron transitions with participation of energy levels of Si2 atoms is detected.

scholarly journals Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)1−x(ZnSe)x with Nanocrystals

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
A. S. Saidov ◽  
Sh. N. Usmonov ◽  
D. V. Saparov
Keyword(s):  
Solid Solution ◽  
Epitaxial Layer ◽  
Surface Region ◽  
Substitutional Solid Solution ◽  
Epitaxial Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ordered Array

In this work, we explored the possibility of growing a substitutional solid solution (GaAs)1−x(ZnSe)x with an ordered array of nanosize crystals on GaAs (100) substrates. Grown epitaxial films were investigated by the X-ray diffraction analysis method. The chemical composition of the grown epitaxial films was determined by a X-ray microanalyzer, along the thickness of the epitaxial layer. The photoluminescence spectrum was studied and a peak is observed at λmax = 465 nm, corresponding to the width of the band gap of zinc selenide EZnSe = 2.67 eV, which is apparently due to the nanocrystals ZnSe, disposed in the surface region of the epitaxial film of a solid solution (GaAs)1−x(ZnSe)x. Size of nanocrystals were evaluated by an atomic force microscopy.

Precipitation in Al + 4% Cu Epitaxial Films

1968 ◽  
Vol 26 ◽  
pp. 384-385
Author(s):  
S. Herd ◽  
S. M. Mader
Keyword(s):  
Solid Solution ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Detectable Change ◽  
Cu Films ◽  
Solution Treated ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Deposited Films

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.

A novel approach of an infrared transparent Er:Y2O3–MgO nanocomposite for eye-safe laser ceramics

2018 ◽  
Vol 6 (41) ◽  
pp. 11096-11103 ◽  
Author(s):  
Ho Jin Ma ◽  
Wook Ki Jung ◽  
Youngtae Park ◽  
Do Kyung Kim
Keyword(s):  
Photoluminescence Spectrum ◽  
Energy Levels ◽  
Laser Ceramics ◽  
Novel Approach

Photoluminescence spectrum and energy levels of an Er:Y2O3–MgO nanocomposite.

Twin and topotactic growth of β-eucryptite dendrites and their lattice coincidence analysed by the reticular theory

2013 ◽  
Vol 46 (1) ◽  
pp. 216-223
Author(s):  
Shan-Rong Zhao ◽  
Hai-Jun Xu ◽  
Rong Liu ◽  
Qin-Yan Wang ◽  
Xian-Yu Liu
Keyword(s):  
Solid Solution ◽  
Crystallographic Orientation ◽  
Electron Backscatter Diffraction ◽  
Electron Backscatter ◽  
Ebsd Technique ◽  
Backscatter Diffraction ◽  
Orientation Determination

Snowflake-shaped dendrites of β-eucryptite–β-quartz solid solution were artificially crystallized in a matt glaze, and the crystallographic orientation of the dendrites was analysed by the electron backscatter diffraction (EBSD) technique. The six branches of a snowflake-shaped dendrite in the plane (0001) are along 〈110〉. From the orientation determination, a twin relationship and a topotactic relationship between dendrites were found. The twin axes are [011], [0{\overline 1}1] and [210], and the twin planes perpendicular to the twin axes are ({\overline 1}2{\overline 1}2) and (1{\overline 2}12). From the reticular theory of twinning, it was calculated that the twin indexn= 2 and the obliquity ω = 3.2877°. The studied dendrite is a twin by reticular pseudomerohedry with low twin index and obliquity. In the topotactic growth, no twin elements have been found, but the three main crystallographic directions 〈001〉, 〈210〉 and 〈110〉 of the two dendritic crystals overlap each other. The degree of lattice coincidence between the two crystals in this topotactic growth is also discussed.

The complex form of donor energy levels in gallium phosphide

1977 ◽  
Vol 10 (24) ◽  
pp. 5111-5129 ◽  
Author(s):  
A C Carter ◽  
R A Stradling ◽  
P J Dean ◽  
M S Skolnick
Keyword(s):  
Gallium Phosphide ◽  
Energy Levels ◽  
Complex Form

Electronic and structural features of uranium-doped graphene: DFT study

2021 ◽  
pp. 1-7
Author(s):  
Lina Majeed Haider Al-Haideri ◽  
Necla Cakmak
Keyword(s):  
Density Functional ◽  
Energy Levels ◽  
Electronic Conductivity ◽  
Structural Features ◽  
Level Energy ◽  
Size Dependent ◽  
The Density Functional Theory ◽  
Doped Graphene ◽  
Homo And Lumo ◽  
Model Size

Electronic and structural features of uranium-doped models of graphene (UG) were investigated in this work by employing the density functional theory (DFT) approach. Three sizes of models were investigated based on the numbers of surrounding layers around the central U-doped region including UG1, UG2, and UG3. In this regard, stabilized structures were obtained and their electronic molecular orbital features were evaluated, accordingly. The results indicated that the stabilized structures could be obtained, in which their electronic features are indeed size-dependent. The conductivity feature was expected at a higher level for the UG3 model whereas that of the UG1 model was at a lower level. Energy levels of the highest occupied and the lowest unoccupied molecular orbitals (HOMO and LUMO) were indeed the evidence of such achievement for electronic conductivity features. As a consequence, the model size of UG could determine its electronic feature providing it for specified applications.

Mechanism of the lattice relaxation in thin epitaxial films of iron oxides: Generalization from the case of ilmenite–hematite solid solution

2011 ◽  
Vol 605 (11-12) ◽  
pp. 1043-1047 ◽  
Author(s):  
E. Popova ◽  
B. Warot-Fonrose ◽  
F. Bonell ◽  
S. Andrieu ◽  
Y. Dumont ◽  
...  
Keyword(s):  
Solid Solution ◽  
Iron Oxides ◽  
Lattice Relaxation ◽  
Epitaxial Films

Thermal Expansion of β-Sic, Gap and Inp

1995 ◽  
Vol 410 ◽  
Author(s):  
Robert R. Reeber ◽  
Kai Wang
Keyword(s):  
Thermal Expansion ◽  
Indium Phosphide ◽  
Gallium Phosphide ◽  
Electronic Devices ◽  
Epitaxial Films ◽  
Interatomic Potentials ◽  
Harmonic Model ◽  
Melting Points ◽  
Model Calculations ◽  
Semi Empirical

ABSTRACTThermal expansion is important for predicting residual stresses in epitaxial films, composites and electronic devices as well as for providing information relevant to an understanding of interatomic potentials and the equation of state of materials. Model calculations have many assumptions, both inherent and implicit, and have difficulty accurately representing thermal expansion at high temperatures and pressures. We utilize a semi-empirical quasi-harmonic model to evaluate available data for β-silicon carbide, gallium phosphide and indium phosphide. The model allows prediction of the thermal properties of these semiconductors from near 0 K to the vicinity of their melting points. The approach, consisting of a simplified frequency spectrum with several Einstein terms, provides a convenient mathematical method where a minimum of empirical parameters represent the thermal property.

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