Effect of internal stress on adhesion and other mechanical properties of evaporated indium tin oxide (ITO) films

1994 ◽  
Vol 8 (3) ◽  
pp. 261-271 ◽  
Author(s):  
S. Suzuki ◽  
N. Hashimoto ◽  
T. Oyama ◽  
K. Suzuki
Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 30
Author(s):  
Xiaoyan Liu ◽  
Lei Wang ◽  
Yi Tong

First-principle density functional theory simulations have been performed to predict the electronic structures and optoelectronic properties of ultrathin indium tin oxide (ITO) films, having different thicknesses and temperatures. Our results and analysis led us to predict that the physical properties of ultrathin films of ITO have a direct relation with film thickness rather than temperature. Moreover, we found that a thin film of ITO (1 nm thickness) has a larger absorption coefficient, lower reflectivity, and higher transmittance in the visible light region compared with that of 2 and 3 nm thick ITO films. We suggest that this might be due to the stronger surface strain effect in 1 nm thick ITO film. On the other hand, all three thin films produce similar optical spectra. Finally, excellent agreement was found between the calculated electrical resistivities of the ultrathin film of ITO and that of its experimental data. It is concluded that the electrical resistivities reduce along with the increase in film thickness of ITO because of the short strain length and limited bandgap distributions.


2003 ◽  
Vol 21 (4) ◽  
pp. 1351-1354 ◽  
Author(s):  
Shinji Takayama ◽  
Toshifumi Sugawara ◽  
Akira Tanaka ◽  
Tokuji Himuro

Author(s):  
R. Hippler ◽  
H. Steffen ◽  
M. Quaas ◽  
T. Röwf ◽  
T.M. Tun ◽  
...  

2007 ◽  
Vol 124-126 ◽  
pp. 431-434
Author(s):  
Joon Hong Park ◽  
Sang Chul Lee ◽  
Jin Ho Lee ◽  
Pung Keun Song

Indium Tin Oxide (ITO) films were deposited on non-alkali glass substrate by magnetron sputtering using commercial ITO target (target A) and improved ITO target (target B). Depositions were carried out at total gas pressure (Ptot) of 0.5 Pa, substrate temperature (Ts) of RT ~ 300 °C, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 1.0% and dc power of 100W. Target B showed relatively higher stability in film resistivity with increasing sputtering time, i.e., erosion ratio of target surface. Optimum oxygen ratio to obtain the lowest resistivity was decreased with increasing substrate temperature. The lowest resistivity was 1.06x10-4 6cm for the film deposited using target B at O2/(O2+Ar) ratio of 0.05% and at Ts =300 °C.


2011 ◽  
Author(s):  
Hironobu Sakata ◽  
Akira Yoshikado ◽  
Eisuke Yokoyama ◽  
Moriaki Wakaki

2014 ◽  
Vol 16 (45) ◽  
pp. 24790-24799 ◽  
Author(s):  
A. Subrahmanyam ◽  
A. Rajakumar ◽  
Md. Rakibuddin ◽  
T. Paul Ramesh ◽  
M. Raveendra Kiran ◽  
...  

Fabrication of novel titanium doped ITO films and understanding the mechanism for effective photocatalytic oxygen generation for artificial lung-assistive devices.


2014 ◽  
Vol 997 ◽  
pp. 337-340
Author(s):  
Jian Guo Chai

Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.


2011 ◽  
Vol 257 (22) ◽  
pp. 9639-9642 ◽  
Author(s):  
Kewei Sun ◽  
Wancheng Zhou ◽  
Xiufeng Tang ◽  
Zhibin Huang ◽  
Fa Lou ◽  
...  

2014 ◽  
Vol 9 (3) ◽  
pp. 414-418
Author(s):  
Sang Hyun Cho ◽  
Hyo Jin Kim ◽  
Sung Ho Lee ◽  
Jae IK Woo ◽  
Kyu Ho Song ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document