Resistance Switching Characteristics of HfO2 Film with Electrode for Resistance Change Random Access Memory

2007 ◽  
Vol 7 (11) ◽  
pp. 4139-4142 ◽  
Author(s):  
In-Sung Park ◽  
Joo-Ho Lee ◽  
Sunwoo Lee ◽  
Jinho Ahn
Keyword(s):  
Random Access ◽  
Atomic Layer ◽  
Resistance Switching ◽  
Dynamic Resistance ◽  
Access Memory ◽  
Hfo2 Film ◽  
Resistance Change ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

The electrode dependent resistance switching behaviors of amorphous HfO2 films grown by atomic layer deposition were systematically investigated. The low and high resistance states were successfully achieved for all the metal-insulator-metal resistor systems with Mo, Ru, and Pt symmetric electrodes. The characteristic reset and set voltages as well as the dynamic resistance ratio of the resistor device are strongly dependent on the electrode material with different work function. In addition, the different features for switching voltages with electrode are shown with annealing temperature.

Oxidant Effect on Resistance Switching Characteristics of HfO2 film Grown Atomic Layer Deposition

2019 ◽  
Vol 11 (7) ◽  
pp. 61-66 ◽  
Author(s):  
In-Sung Park ◽  
Jooho Lee ◽  
Seungki Yoon ◽  
Keum Jee Jung ◽  
Sunwoo Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Resistance Switching ◽  
Hfo2 Film ◽  
Layer Deposition ◽  
Switching Characteristics ◽  
Oxidant Effect

scholarly journals Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Joel Molina-Reyes ◽  
Luis Hernandez-Martinez
Keyword(s):  
Resistive Switching ◽  
Atomic Layer ◽  
Memory Device ◽  
Switching Behavior ◽  
Processing Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

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