A Study on the Correlation Between the Grain Size and the Conversion Efficiency of Mc-Si Solar Cells

2012 ◽  
Vol 12 (7) ◽  
pp. 5691-5695 ◽  
Author(s):  
Myoung-Bok Lee ◽  
Kyu-Ho Song ◽  
Kwang-Mook Park ◽  
Ji-Hee Jung ◽  
So-Ik Bae
Keyword(s):  
Grain Size ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
Si Solar Cells

A thiourea additive-based quadruple cation lead halide perovskite with an ultra-large grain size for efficient perovskite solar cells

Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 21824-21833 ◽  
Author(s):  
Jyoti V. Patil ◽  
Sawanta S. Mali ◽  
Chang Kook Hong
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Power Conversion ◽  
Perovskite Solar Cells ◽  
Inorganic Perovskite ◽  
Halide Perovskite ◽  
Lead Halide

Controlling the grain size of the organic–inorganic perovskite thin films using thiourea additives now crossing 2 μm size with >20% power conversion efficiency.

scholarly journals Efficiency Enhancement of Nanoporous Silicon/Polycrystalline-Silicon Solar Cells by Application of Trenched Electrodes

2014 ◽  
Vol 2014 ◽  
pp. 1-4
Author(s):  
Kuen-Hsien Wu ◽  
Chia-Chun Tang
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Polycrystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Textured Surface ◽  
Surface Layers ◽  
Nanoporous Silicon ◽  
Si Solar Cells ◽  
A Tec

Trenched electrodes were proposed to enhance the short-circuit current and conversion efficiency of polycrystalline-silicon (poly-Si) solar cells with nanoporous silicon (NPS) surface layers. NPS films that served as textured surface layers were firstly prepared on heavily doped p+-type (100) poly-Si wafers by anodic etching process. Interdigitated trenches were formed in the NPS layers by a reactive-ion-etch (RIE) process and Cr/Al double-layered metal was then deposited to fill the trenches and construct trenched-electrode-contacts (TEC’s). Cells with TEC structures (called “TEC cells”) obtained 5.5 times higher short-circuit current than that of cells with planar electrode contacts (called “non-TEC cells”). Most significantly, a TEC cell achieved 8 times higher conversion efficiency than that of a non-TEC cell. The enhanced short-circuit current and conversion efficiency in TEC cells were ascribed to the reduced overall series resistance of devices. In a TEC cell, trenched electrodes provided photocurrent flowing routes that directly access the poly-Si substrates without passing through the high resistive NPS layers. Therefore, the application of NPS surface layers with trenched electrodes is a novel approach to development of highly efficient poly-Si solar cells.

Hydrogen Passivation of Thin-film Polysilicon Solar Cells

2007 ◽  
Vol 989 ◽  
Author(s):  
Lode Carnel ◽  
Ivan Gordon ◽  
Dries Van Gestel ◽  
Guy Beaucarne ◽  
Jef Poortmans
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Solar Cells ◽  
Low Cost ◽  
Hydrogen Passivation ◽  
Fine Grained ◽  
Si Solar Cells ◽  
Before And After ◽  
Plasma Passivation ◽  
Recombination Velocity

AbstractThin-film polysilicon solar cells are a promising low-cost alternative for bulk silicon solar cells. Due to their reduced material thickness, these solar cells are less dependent on the silicon feedstock price. Until now these devices showed a worse performance compared to bulk Si solar cells due to the small grain size and the high recombination velocity at the grain boundaries. A better understanding of hydrogen passivation is therefore of crucial importance to improve the efficiency of polysilicon solar cells. In this work we characterized fine-grained polysilicon layers with a grain size of only 0.2 μm before and after passivation. Plasma hydrogenation led to a higher hydrogen concentration in the first micron of the layer than nitride passivation. The highest efficiency of 5.0 % was reached when nitride passivation was followed by plasma passivation.

Air-exposing microwave-assisted synthesis of CuInS2/ZnS quantum dots for silicon solar cells with enhanced photovoltaic performance

RSC Advances ◽  
2015 ◽  
Vol 5 (124) ◽  
pp. 102682-102688 ◽  
Author(s):  
Ming Hong ◽  
Tongtong Xuan ◽  
Jiaqing Liu ◽  
Ziyao Jiang ◽  
Yiwei Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Microwave Irradiation ◽  
Conversion Efficiency ◽  
Photovoltaic Performance ◽  
Composite Films ◽  
Silicon Solar Cells ◽  
Microwave Assisted Synthesis ◽  
Microwave Assisted ◽  
Si Solar Cells

CIS/ZnS QDs were synthesized by microwave irradiation in air. The fabricated QDs/PMMA composite films were first applied to Si solar cells to improve the conversion efficiency by 3.8%.

Effects of One-Dimensional Photonic Crystal on Thin Film Silicon Solar Cells

2013 ◽  
Vol 827 ◽  
pp. 49-53 ◽  
Author(s):  
Qi Wang ◽  
Hai Na Mo ◽  
Zi Qiao Lou ◽  
Ke Meng Yang ◽  
Yue Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Solar Cells ◽  
Photonic Crystal ◽  
Energy Conversion ◽  
Conversion Efficiency ◽  
Energy Conversion Efficiency ◽  
One Dimensional ◽  
Si Solar Cells ◽  
Refractive Index Difference

We have designed lateral contact thin film silicon-based solar cells with and without one-dimensional photonic crystals as back surface field layer. The photonic crystal comprises a distributed Bragg reflector (DBR) for trapping the light. Simulations demonstrate that energy conversion efficiency and short circuit current ISCfor c-Si solar cells with the photonic crystal structure are increased to 21.11% and 27.0 mA, respectively, from 18.33% and 22.8mA of the one without photonic crystal. In addition, the effects of DBRs consisting of different materials are investigated in our simulations. When the refractive index difference between sub-layers of the DBR is larger, the forbidden band width is broader, the reflectance of the DBR is higher, and more photons are reflected and trapped into the active region, then the absorption efficiency and the energy conversion efficiency of the solar cell are both increased. The bigger the refractive index difference of the DBRs sub-layers is, the broader the forbidden band width is. In addition, a-Si solar cells with and without DBR are also discussed.

scholarly journals Investigation of Low-Cost Surface Processing Techniques for Large-Size Multicrystalline Silicon Solar Cells

2010 ◽  
Vol 2010 ◽  
pp. 1-6 ◽  
Author(s):  
Yuang-Tung Cheng ◽  
Jyh-Jier Ho ◽  
William J. Lee ◽  
Song-Yeu Tsai ◽  
Yung-An Lu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Conversion Efficiency ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Multicrystalline Silicon ◽  
Double Layers ◽  
Large Size ◽  
Si Solar Cells

The subject of the present work is to develop a simple and effective method of enhancing conversion efficiency in large-size solar cells using multicrystalline silicon (mc-Si) wafer. In this work, industrial-type mc-Si solar cells with area of125×125 mm2were acid etched to produce simultaneouslyPOCl3emitters and silicon nitride deposition by plasma-enhanced chemical vapor deposited (PECVD). The study of surface morphology and reflectivity of different mc-Si etched surfaces has also been discussed in this research. Using our optimal acid etching solution ratio, we are able to fabricate mc-Si solar cells of 16.34% conversion efficiency with double layers silicon nitride (Si3N4) coating. From our experiment, we find that depositing double layers silicon nitride coating on mc-Si solar cells can get the optimal performance parameters. Open circuit (Voc) is 616 mV, short circuit current (Jsc) is 34.1 mA/cm2, and minority carrier diffusion length is 474.16 μm. The isotropic texturing and silicon nitride layers coating approach contribute to lowering cost and achieving high efficiency in mass production.

High Quality a-Si Films and Superlattice Structure p-Layer a-Si Solar Cells

1986 ◽  
Vol 70 ◽  
Author(s):  
Shoichi Nakano ◽  
Shinya Tsuda ◽  
Hisaki Tarui ◽  
Tsuyoshi Takahama ◽  
Hisao Haku ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Reaction Chamber ◽  
High Quality ◽  
Cvd Method ◽  
Superlattice Structure ◽  
Si Solar Cells ◽  
New Material ◽  
Si Films ◽  
First Time

ABSTRACTAs a new preparation method for high-quality a-Si films, we have developed the super chamber, a separated UHV reaction chamber system. A low impurity concentration and excellent film properties were obtained by the super chamber. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method.As a new material, amorphous superlattice structure films were fabricated by the photo-CVD method for the first time. Quantization effects and low damage to the interfaces were observed. Superlattice structure p-layer a-Si solar cells were fabricated for the first time, and a conversion efficiency of 10.5% was obtained.

Thermal Annealing Effect on the Conversion Efficiency of Si Solar Cells

2018 ◽  
Vol 13 (10) ◽  
pp. 1557-1563 ◽  
Author(s):  
Jonghun Mun ◽  
Srikanta Palei ◽  
Rajkumar Sahu ◽  
Jaeho Choi ◽  
Keunjoo Kim
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Thermal Annealing ◽  
Conversion Efficiency ◽  
Hydrogen Diffusion ◽  
Minority Carrier Lifetime ◽  
Halogen Lamp ◽  
Total Recovery ◽  
Si Solar Cells ◽  
Cell Conversion

We investigated the effect of thermal annealing on the performances of Si solar cells. The Si solar cells were fabricated on p-type microtextured Si wafers using a standard cell fabrication process. The fabricated cells were annealed at 250 °C for 60, 80, and 90 min using a halogen lamp heater in N2 ambient. The annealed sample with a time of 60 min showed enhanced optical properties of light absorption, quantum efficiency, and minority carrier lifetime but did not show enhanced cell conversion efficiency. However, while the cell annealed for 90 min showed different optical properties, it showed the highest conversion efficiency of 17.35% compared to the reference cell of 17.14%, indicating the total recovery of the light soaking effect. We further analyzed the hydrogen-related chemical bonding structures for the dopant activation throughout hydrogen diffusion and the electroluminescence by a radiative recombination of a p–n junction.

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