A Novel Method to Make Boron-Doped Microcrystalline Silicon Thin Films with Optimal Crystalline Volume Fraction for Thin Films Solar Cell Applications

2014 ◽  
Vol 14 (12) ◽  
pp. 9388-9394 ◽  
Author(s):  
Chonghoon Shin ◽  
Jinjoo Park ◽  
Sangho Kim ◽  
Hyeongsik Park ◽  
Junhee Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Volume Fraction ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Novel Method

The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

2013 ◽  
Vol 537 ◽  
pp. 197-200
Author(s):  
Chun Ya Li ◽  
Hao Zhang ◽  
Jun Li ◽  
Xi Feng Li ◽  
Jian Hua Zhang
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Reaction Pressure ◽  
Silicon Thin Films

Under different growth conditions, microcrystalline silicon thin films are deposited successfully on glass substrates by the double-frequency plasma enhanced chemical vapor deposition (PECVD). We report the systematic investigation of the effect of process parameters (hydrogen dilution, substrate temperature, forward power, reaction pressure, et al.) on the growth characteristics of microcrystalline silicon thin films. Raman scattering spectra are used to analyze the crystalline condition of the films and the experimental results. Optimizing the process parameters, the highest crystalline volume fraction of microcrystalline silicon films was achieved. It is found that the crystalline volume fraction of microcrystalline silicon films reaches 72.2% at the reaction pressure of 450 Pa, H2/SiH4 flow ratio of 800sccm/10sccm, power of 400 W and substrate temperature of 350 °C.

Study of μс-Si:H Thin Films Prepared by RF-PECVD

2014 ◽  
Vol 492 ◽  
pp. 235-238
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Film Thickness ◽  
Optical Band Gap ◽  
Volume Fraction ◽  
Structure And Properties ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Transmittance Curve

μc-Si:H thin films have been deposited on the 7059 glass substrate by RF-PECVD. Effects of film thickness on structure and properties of Si thin films were investigated by XRDRamanUV-Vis and precision multimeter. Experimental results indicated that uniform dense microcrystalline silicon thin films can be prepared by rf-PECVD, silicon thin films transferred from a-Si:H to μc-Si:H along with film thickness increased. For μc-Si:H, XRD spectrum occurred (111)(220) and (331) peak, grain size and crystalline volume fraction increased with thickness enhanced, arrived at 82%; optical band gap of μc-Si:H is 2.0~2.36eV and decreased when thickness increased, the transmittance was added firstly and then reduced with film thickness increased, the transmittance curve occurred redshift;the photosensitivity of the thin films was improved firstly and then decreased with thickness increased, which was highest at 104 quantity in the transition zone from a-Si:H to μc-Si:H.

Highly conductive boron doped micro/nanocrystalline silicon thin films deposited by VHF-PECVD for solar cell applications

2015 ◽  
Vol 643 ◽  
pp. 94-99 ◽  
Author(s):  
Sucheta Juneja ◽  
S. Sudhakar ◽  
Jhuma Gope ◽  
Kalpana Lodhi ◽  
Mansi Sharma ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Boron Doped

Influence of Hydrogen Dilution on Properties of Silicon Films Prepared by D.C. Saddle-Field Glow-Discharge: Observation of Microcrystallinity

2003 ◽  
Vol 762 ◽  
Author(s):  
T. Allen ◽  
I. Milostnaya ◽  
D. Yeghikyan ◽  
K. Leong ◽  
F. Gaspari ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Gas Phase ◽  
Volume Fraction ◽  
Average Crystallite Size ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Silane Concentration ◽  
Glow Discharge Deposition

AbstractIn the D.C. saddle field glow discharge deposition the transition from amorphous to microcrystalline silicon thin films occurs when the silane concentration in the gas phase drops below 10%. We report here the results of Raman spectroscopy, SEM, TEM, and HRTEM studies of the film morphology. We estimate the average crystallite size to be in the range of 5 to 7 nm and the crystalline volume fraction of 25 to 35%.

scholarly journals Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

2012 ◽  
Vol 25 ◽  
pp. 34-42 ◽  
Author(s):  
Yunfeng Yin ◽  
Jidong Long ◽  
Selvaraj Venkataraj ◽  
Juan Wang ◽  
Armin G. Aberle
Keyword(s):  
Thin Films ◽  
Microcrystalline Silicon ◽  
High Quality ◽  
Silicon Thin Films ◽  
Boron Doped

Measure of carrier lifetime in nanocrystalline silicon thin films using transmission modulated photoconductive decay

2010 ◽  
Vol 1245 ◽  
Author(s):  
Brian J. Simonds ◽  
Baojie Yan ◽  
Guozhen Yue ◽  
Donald Dunlavy ◽  
Richard K. Ahrenkiel ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Lifetime ◽  
Volume Fraction ◽  
Nanocrystalline Silicon ◽  
Contact Method ◽  
Crystalline Volume Fraction ◽  
Effective Lifetime ◽  
Photoconductive Decay ◽  
Carrier Lifetimes ◽  
Silicon Thin Films

AbstractWe present results of extremely short carrier lifetime measurements on a series of hydrogenated nanocrystalline silicon (nc-Si:H) thin films by a novel, non-destructive, non-contact method. Transmission modulated photoconductive decay (TMPCD) is a newly developed technique which appears to have high enough sensitivity and time resolution to measure the extremely short carrier lifetimes on the order of a nanosecond. As a proof of this, we measure various nc-Si:H samples of varying crystalline volume fraction as well as a fully amorphous sample. To ascribe an effective lifetime to the materials, we use a simple model which assumes a single exponential decay. By using this model, effective lifetimes can be deconvoluted from our pump beam giving nanosecond lifetimes. Lifetimes of between 1.9 and 0.9 nanoseconds are reported and trend to decreasing lifetimes as crystalline volume fraction is increased.

Investigation of meta- and in-stability effects in hydrogenated microcrystalline silicon thin films by the steady-state measurement methods

2014 ◽  
Vol 92 (7/8) ◽  
pp. 768-773 ◽  
Author(s):  
Mehmet Günes ◽  
Hamza Cansever ◽  
Gökhan Yilmaz ◽  
Muzaffer H. Sagban ◽  
Vladimir Smirnov ◽  
...  
Keyword(s):  
Thin Films ◽  
Steady State ◽  
High Purity ◽  
Volume Fraction ◽  
Silicon Film ◽  
Dark Conductivity ◽  
Deionized Water ◽  
Microcrystalline Silicon ◽  
Steady State Condition ◽  
Silicon Thin Films

Metastability effects because of atmospheric exposure, high purity gasses, and deionized water in hydrogenated microcrystalline silicon thin films with different crystalline volume fractions were studied using well accepted steady-state characterization methods of dark conductivity, steady-state photoconductivity, steady-state photocarrier grating (SSPG) and dual beam photoconductivity (DBP) methods. A standard measurement procedure has been established before using the steady state methods, in which a steady state condition of dark conductivity was established by monitoring the time dependence of dark conductivity. Samples deposited on smooth glass and rough glass substrates exhibit similar reversible and irreversible changes in the properties of microcrystalline silicon film. A reliable correlation of reversible and irreversible changes indicate that dark conductivity and photoconductivity values increase, sub-bandgap absorption spectrum obtained from DBP method decrease and correspondingly minority carrier diffusion lengths obtained from the SSPG method increase in the metastable state in various amount for microcrystalline films with crystalline volume fraction, [Formula: see text] > 0.30. Amorphous silicon and microcrystalline silicon films with [Formula: see text] < 0.30 do not show detectable metastable changes as samples exposed to atmospheric condition as well as high purity oxygen gas and deionized water.

Boron-Doped Nanocrystalline Silicon Thin Films Prepared by PECVD

2012 ◽  
Vol 503 ◽  
pp. 386-390
Author(s):  
Xiu Qin Wang ◽  
Jian Ning Ding ◽  
Ning Yi Yuan ◽  
Shu Bo Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Volume Fraction ◽  
Chemical Vapour ◽  
Nanocrystalline Silicon ◽  
Process Conditions ◽  
Rf Power ◽  
Silicon Thin Films ◽  
Boron Doped

Boron-doped nanocrystalline silicon thin films(p-nc-Si:H) were deposited on glass substrates by plasma enhanced chemical vapour deposition (PECVD) using SiH4/ H2/ B2H6. The effects of substrate temperature, rf power and diborane flow on the microstructure, the electrical properties of nanocrystalline silicon thin films have been investigated. The results show that, increasing substrate temperature, rf power and B2H6flow can improve the conductivity of P-Si thin film. However, exceeding one value, they are not advantageous to improve the conductivity due to the decrystallization of films. Hence, appropriate process conditions are crucial for the preparation of high quality p layer. crystalline volume fraction (Xc) 26.2 %, mean grain size (d) 3.5nm and conductivity 0.374S/cm, p-nc-Si:H thin film was deposited.

Highly Conductive p-type Microcrystalline Silicon Thin Films

1996 ◽  
Vol 420 ◽  
Author(s):  
M. Heintze ◽  
M. Schmitt
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Plasma Deposition ◽  
Growth Surface ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Positive Ions ◽  
Boron Doped ◽  
P Type

AbstractThe plasma deposition of boron doped microcrystalline films was optimized with respect to crystallinity and doping efficiency. High room temperature conductivities up to 39 Scm−1 were achieved under condition when the energy of positive ions impinging on the growth surface is minimized.

Sign in / Sign up

Export Citation Format

Share Document