The Impact of Tunnel Oxide Nitridation to Reliability Performance of Charge Storage Non-Volatile Memory Devices

Traditional flash memory devices consist of Polysilicon Control Gate (CG) - Oxide-Nitride-Oxide (ONO - Interpoly Dielectric) - Polysilicon Floating Gate (FG) - Silicon Oxide (Tunnel dielectric) - Substrate. The dielectrics have to be scaled down considerably in order to meet the escalating demand for lower write/erase voltages and higher density of cells. But as the floating gate dimensions are scaled down the charge stored in the floating gate leak out more easily via thin tunneling oxide below the floating gate which causes serious reliability issues and the whole amount of stored charge carrying information can be lost. The possible route to eliminate this problem is to use high-k based interpoly dielectric and to replace the polysilicon floating gate with a metal floating gate. At larger physical thickness, these materials have similar capacitance value hence avoiding tunneling effect. Discrete nanocrystal memory has also been proposed to solve this problem. Due to its high operation speed, excellent scalability and higher reliability it has been shown as a promising candidate for future non-volatile memory applications. This review paper focuses on the recent efforts and research activities related to the fabrication and characterization of non-volatile memory device with metal floating gate/metal nanocrystals as the charge storage layer.

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Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

Journal of Materials Chemistry C ◽

10.1039/c6tc03607d ◽

2016 ◽

Vol 4 (46) ◽

pp. 10967-10972 ◽

Cited By ~ 35

Author(s):

Sujaya Kumar Vishwanath ◽

Jihoon Kim

Keyword(s):

Resistive Switching ◽

Retention Time ◽

Elevated Temperatures ◽

Switching Behavior ◽

Memory Devices ◽

Bipolar Switching ◽

Non Volatile Memory ◽

Volatile Memory ◽

Switching Characteristics ◽

Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

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Fluorenone/carbazole based bipolar small molecules for non-volatile memory devices

Organic Electronics ◽

10.1016/j.orgel.2019.105584 ◽

2020 ◽

Vol 78 ◽

pp. 105584 ◽

Cited By ~ 3

Author(s):

Jia-Qin Yang ◽

Li-Yu Ting ◽

Ruopeng Wang ◽

Jing-Yu Mao ◽

Yi Ren ◽

...

Keyword(s):

Small Molecules ◽

Memory Devices ◽

Non Volatile Memory ◽

Volatile Memory

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Comparing domain wall synapse with other non volatile memory devices for on-chip learning in analog hardware neural network

AIP Advances ◽

10.1063/1.5128344 ◽

2020 ◽

Vol 10 (2) ◽

pp. 025111 ◽

Cited By ~ 1

Author(s):

Divya Kaushik ◽

Utkarsh Singh ◽

Upasana Sahu ◽

Indu Sreedevi ◽

Debanjan Bhowmik

Keyword(s):

Neural Network ◽

Domain Wall ◽

Memory Devices ◽

Non Volatile Memory ◽

Volatile Memory ◽

On Chip ◽

Hardware Neural Network

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Non Volatile Memory Devices

Floating Gate Devices: Operation and Compact Modeling ◽

10.1007/1-4020-2613-7_6 ◽

2006 ◽

pp. 103-129

Author(s):

G. Campardo ◽

R. Micheloni

Keyword(s):

Memory Devices ◽

Non Volatile Memory ◽

Volatile Memory

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Graphene Based Non-Volatile Memory Devices

Advanced Materials ◽

10.1002/adma.201306041 ◽

2014 ◽

Vol 26 (31) ◽

pp. 5496-5503 ◽

Cited By ~ 66

Author(s):

Xiaomu Wang ◽

Weiguang Xie ◽

Jian-Bin Xu

Keyword(s):

Memory Devices ◽

Non Volatile Memory ◽

Volatile Memory

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Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.602-603.1056 ◽

2014 ◽

Vol 602-603 ◽

pp. 1056-1059 ◽

Cited By ~ 2

Author(s):

Min Chang Kuan ◽

Fann Wei Yang ◽

Chien Min Cheng ◽

Kai Huang Chen ◽

Jian Tz Lee

Keyword(s):

Thin Film ◽

Thin Films ◽

Manganese Oxide ◽

Random Access ◽

Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

Resistance Random Access Memory ◽

Non Volatile Memory ◽

Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

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