Numerical Study on the Growth Rate of Silicon Carbide Single Crystals in a High Temperature Chemical Vapor Deposition System

2017 ◽  
Vol 17 (11) ◽  
pp. 8344-8349 ◽  
Author(s):  
Seongkyung Kim ◽  
Sungin Suh ◽  
Jae Kyeong Jeong ◽  
Hyeong Joon Kim
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Single Crystals ◽  
Vapor Deposition ◽  
Numerical Study ◽  
Chemical Vapor

Effect of surface kinetics on the step coverage during chemical vapor deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2377-2380 ◽  
Author(s):  
Gyeong Soon Hwang ◽  
Sang Heup Moon ◽  
Suk Woo Nam ◽  
Chee Burm Shin
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Numerical Study ◽  
Chemical Vapor ◽  
Surface Kinetics ◽  
Nonlinear Kinetics ◽  
High Tendency ◽  
Step Coverage ◽  
Limited Process

Profile evolution simulations during chemical vapor deposition based on a 2D continuum model reveal that the type of surface kinetics plays an important role in determining step coverage of films deposited in high aspect ratio trenches and vias. Linear surface kinetics, resulting from an adsorption rate limited process, is found to cause difficulty in bringing about conformal step coverage in deep narrow trenches without reducing the growth rate considerably. Under such condition, void-free filling cannot be achieved while maintaining a growth rate acceptable to integrated circuit (IC) manufacturing. The numerical study also suggests that the high tendency of the precursor for chemical equilibrium on a surface, resulting in nonlinear kinetics by a surface reaction limited process, is crucial to achieve a uniform step coverage as typically observed in SiO2 deposition from tetraethylorthosilicate (TEOS).

High-Temperature Reactor Cleaning Using Chlorine Trifluoride Gas for Silicon Carbide Chemical Vapor Deposition

2019 ◽  
Vol 8 (8) ◽  
pp. P400-P406 ◽  
Author(s):  
Keisuke Kurashima ◽  
Masaya Hayashi ◽  
Hitoshi Habuka ◽  
Hideki Ito ◽  
Sin-ichi Mitani ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Temperature Reactor

scholarly journals The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer

2013 ◽  
Vol 19 (S2) ◽  
pp. 1948-1949 ◽  
Author(s):  
I.J. van Rooyen ◽  
P.M. van Rooyen ◽  
M.L. Dunzik-Gougar
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Temperature Annealing ◽  
Carbide Layer

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Fabrication of Gallium Nitride Films in a Chemical Vapor Deposition Reactor

2015 ◽  
Vol 7 (2) ◽  
Author(s):  
J. Meng ◽  
S. Wong ◽  
Y. Jaluria
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Concentration Ratio ◽  
Numerical Study ◽  
Chemical Vapor ◽  
Transport Processes ◽  
Inlet Velocity ◽  
Rotating Speed ◽  
Reactor Pressure

A numerical study has been carried out on the metalorganic chemical vapor deposition (MOCVD) process for the fabrication of gallium nitride (GaN) thin films, which range from a few nanometers to micrometers in thickness. The numerical study is also coupled with an experimental study on the flow and thermal transport processes in the system. Of particular interest in this study is the dependence of the growth rate of GaN and of the uniformity of the film on the flow, resulting from the choice of various design and operating parameters involved in the MOCVD process. Based on an impingement type rotating-disk reactor, three-dimensional simulations have been preformed to indicate the deposition rate increases with reactor pressure, inlet velocity, and wafer rotating speed, while decreases with the precursor concentration ratio. Additionally, a better film uniformity is caused by reducing the reactor pressure, inlet velocity and wafer rotating speed, and increasing precursor concentration ratio. With the impact of wafer temperature included in this study as well, these results are expected to provide a quantitative basis for the prediction, design, and optimization of the process for the fabrication of GaN devices. The flow and the associated transport processes are discussed in detail on the basis of the results obtained to suggest approaches to improve the uniformity of thin film, minimize fluid loss, and reduce flow recirculation that could affect growth rate and uniformity.

Thermal Transport in the Gallium Nitride Chemical Vapor Deposition Process

2013 ◽  
Author(s):  
Jiandong Meng ◽  
Yogesh Jaluria
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Numerical Study ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Design Parameters ◽  
Thermal Buoyancy

A numerical study has been carried out to characterize the metalorganic chemical vapor deposition (MOCVD) growth of Gallium Nitride (GaN) in a rotating-disk reactor. The major objective of this work is to examine the dependence of the growth rate and thin film uniformity on the primary parameters. First of all, for a rotating-disk system, the governing equations involved are obtained. Then, with the effect of thermal buoyancy included and based on the detailed mathematical model and chemical reaction mechanisms, the 3D simulation study is conducted for a rotating reactor. A comparison between the predicted growth rate and experimental data is presented. In addition, the effect of various primary operating and design parameters on the growth rate of GaN and thin-film uniformity is also examined. This provides further insight into the reactor performance and the characteristics of the entire process. The results obtained can also form the basis for the future design and optimization of this system.

Degradation in Euv Reflectance of Ion-Sputtered Sic Films

1994 ◽  
Vol 354 ◽  
Author(s):  
Dan Schwarcz ◽  
Ritva A.M. Keski-Kuha
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Extreme Ultraviolet ◽  
Chemical Vapor ◽  
Optical Components ◽  
Optical Surfaces ◽  
Sic Films

AbstractSilicon Carbide (SiC) formed by chemical vapor deposition (CVD) has the highest reflectivity in the extreme ultraviolet (EUV) of any currently used optical material. The high temperature required for the CVD process, however, limits its suitability for coating optical components. To address this problem thin films have been sputtered onto optical surfaces from CVD βSiC targets. These films, while having reflectivity lower than that of CVD SiC, are nonetheless the best coatings available for reflectance in the spectral region below 1000À. While the initial properties are good, the EUV reflectivity degrades with time after deposition. A relative decrease of about 25% is evident in the reflectivity at 920Â after 2.5 years, and about 85% of this change occurs in the first three months. In fact, a decrease is observed in the minutes following deposition. In this study the degradation is characterized and a mechanism is proposed. Efforts underway to reduce or eliminate the degradation are discussed.

scholarly journals The Decomposition of Methyltrichlorosilane: Studies in A High-Temperature Flow Reactor

1993 ◽  
Vol 334 ◽  
Author(s):  
Mark D. Allendorf ◽  
Thomas H. Osterheld ◽  
Carl F. Melius
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Flow Reactor ◽  
Chemical Vapor ◽  
Experimental Measurements ◽  
Chain Mechanism ◽  
Radical Chain ◽  
Hydrogen Carrier

AbstractExperimental measurements of the decomposition of methyltrichlorosilane (MTS), a common silicon carbide precursor, in a high-temperature flow reactor are presented. The results indicate that methane and hydrogen chloride are major products of the decomposition. No chlorinated silane products were observed. Hydrogen carrier gas was found to increase the rate of MTS decomposition. The observations suggest a radical-chain mechanism for the decomposition. The implications for silicon carbide chemical vapor deposition are discussed.

Observation of Vacancy Clusters in HTCVD Grown SiC

2005 ◽  
Vol 483-485 ◽  
pp. 469-472 ◽  
Author(s):  
Reino Aavikko ◽  
Kimmo Saarinen ◽  
Björn Magnusson ◽  
Erik Janzén
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Positron Lifetime ◽  
Chemical Vapor ◽  
Vacancy Clusters ◽  
Positron Lifetime Spectroscopy

Positron lifetime spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapor deposition (HTCVD). The measured positron lifetime spectra can be decomposed into two components, of which the longer corresponds to vacancy clusters. We have carried out atomic superposition calculations to estimate the size of these clusters.

scholarly journals Unusual Dependence of the Diamond Growth Rate on the Methane Concentration in the Hot Filament Chemical Vapor Deposition Process

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 426
Author(s):  
Byeong-Kwan Song ◽  
Hwan-Young Kim ◽  
Kun-Su Kim ◽  
Jeong-Woo Yang ◽  
Nong-Moon Hwang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Lower Growth ◽  
Filament Temperature ◽  
Diamond Phase ◽  
Hot Filament

Although the growth rate of diamond increased with increasing methane concentration at the filament temperature of 2100 °C during a hot filament chemical vapor deposition (HFCVD), it decreased with increasing methane concentration from 1% CH4 –99% H2 to 3% CH4 –97% H2 at 1900 °C. We investigated this unusual dependence of the growth rate on the methane concentration, which might give insight into the growth mechanism of a diamond. One possibility would be that the high methane concentration increases the non-diamond phase, which is then etched faster by atomic hydrogen, resulting in a decrease in the growth rate with increasing methane concentration. At 3% CH4 –97% H2, the graphite was coated on the hot filament both at 1900 °C and 2100 °C. The graphite coating on the filament decreased the number of electrons emitted from the hot filament. The electron emission at 3% CH4 –97% H2 was 13 times less than that at 1% CH4 –99% H2 at the filament temperature of 1900 °C. The lower number of electrons at 3% CH4 –97% H2 was attributed to the formation of the non-diamond phase, which etched faster than diamond, resulting in a lower growth rate.

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