Observation of Vacancy Clusters in HTCVD Grown SiC

2005 ◽  
Vol 483-485 ◽  
pp. 469-472 ◽  
Author(s):  
Reino Aavikko ◽  
Kimmo Saarinen ◽  
Björn Magnusson ◽  
Erik Janzén
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Positron Lifetime ◽  
Chemical Vapor ◽  
Vacancy Clusters ◽  
Positron Lifetime Spectroscopy

Positron lifetime spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapor deposition (HTCVD). The measured positron lifetime spectra can be decomposed into two components, of which the longer corresponds to vacancy clusters. We have carried out atomic superposition calculations to estimate the size of these clusters.

Numerical Study on the Growth Rate of Silicon Carbide Single Crystals in a High Temperature Chemical Vapor Deposition System

2017 ◽  
Vol 17 (11) ◽  
pp. 8344-8349 ◽  
Author(s):  
Seongkyung Kim ◽  
Sungin Suh ◽  
Jae Kyeong Jeong ◽  
Hyeong Joon Kim
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Single Crystals ◽  
Vapor Deposition ◽  
Numerical Study ◽  
Chemical Vapor

High-Temperature Reactor Cleaning Using Chlorine Trifluoride Gas for Silicon Carbide Chemical Vapor Deposition

2019 ◽  
Vol 8 (8) ◽  
pp. P400-P406 ◽  
Author(s):  
Keisuke Kurashima ◽  
Masaya Hayashi ◽  
Hitoshi Habuka ◽  
Hideki Ito ◽  
Sin-ichi Mitani ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Temperature Reactor

scholarly journals The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer

2013 ◽  
Vol 19 (S2) ◽  
pp. 1948-1949 ◽  
Author(s):  
I.J. van Rooyen ◽  
P.M. van Rooyen ◽  
M.L. Dunzik-Gougar
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Temperature Annealing ◽  
Carbide Layer

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Degradation in Euv Reflectance of Ion-Sputtered Sic Films

1994 ◽  
Vol 354 ◽  
Author(s):  
Dan Schwarcz ◽  
Ritva A.M. Keski-Kuha
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Extreme Ultraviolet ◽  
Chemical Vapor ◽  
Optical Components ◽  
Optical Surfaces ◽  
Sic Films

AbstractSilicon Carbide (SiC) formed by chemical vapor deposition (CVD) has the highest reflectivity in the extreme ultraviolet (EUV) of any currently used optical material. The high temperature required for the CVD process, however, limits its suitability for coating optical components. To address this problem thin films have been sputtered onto optical surfaces from CVD βSiC targets. These films, while having reflectivity lower than that of CVD SiC, are nonetheless the best coatings available for reflectance in the spectral region below 1000À. While the initial properties are good, the EUV reflectivity degrades with time after deposition. A relative decrease of about 25% is evident in the reflectivity at 920Â after 2.5 years, and about 85% of this change occurs in the first three months. In fact, a decrease is observed in the minutes following deposition. In this study the degradation is characterized and a mechanism is proposed. Efforts underway to reduce or eliminate the degradation are discussed.

scholarly journals The Decomposition of Methyltrichlorosilane: Studies in A High-Temperature Flow Reactor

1993 ◽  
Vol 334 ◽  
Author(s):  
Mark D. Allendorf ◽  
Thomas H. Osterheld ◽  
Carl F. Melius
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Flow Reactor ◽  
Chemical Vapor ◽  
Experimental Measurements ◽  
Chain Mechanism ◽  
Radical Chain ◽  
Hydrogen Carrier

AbstractExperimental measurements of the decomposition of methyltrichlorosilane (MTS), a common silicon carbide precursor, in a high-temperature flow reactor are presented. The results indicate that methane and hydrogen chloride are major products of the decomposition. No chlorinated silane products were observed. Hydrogen carrier gas was found to increase the rate of MTS decomposition. The observations suggest a radical-chain mechanism for the decomposition. The implications for silicon carbide chemical vapor deposition are discussed.

Modeling of silicon carbide chemical vapor deposition in a vertical reactor

1999 ◽  
Vol 61-62 ◽  
pp. 172-175 ◽  
Author(s):  
A.N. Vorob’ev ◽  
Yu.E. Egorov ◽  
Yu.N. Makarov ◽  
A.I. Zhmakin ◽  
A.O. Galyukov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor

CFD Simulation of Chemical Vapor Deposition of Silicon Carbide in CH3SiCl3-H2 System

2014 ◽  
Vol 10 (1) ◽  
pp. 135-137 ◽  
Author(s):  
Kyoon Choi ◽  
Jun-Woo Kim
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cfd Simulation ◽  
Chemical Vapor

scholarly journals The Progress on Low-Cost, High-Quality, High-Temperature Superconducting Tapes Deposited by the Combustion Chemical Vapor Deposition Process

2001 ◽  
Vol 689 ◽  
Author(s):  
Shara S. Shoup ◽  
Marvis K. White ◽  
Steve L. Krebs ◽  
Natalie Darnell ◽  
Adam C. King ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Critical Current Density ◽  
Buffer Layer ◽  
Critical Current ◽  
Vapor Deposition ◽  
Low Cost ◽  
Chemical Vapor ◽  
High Critical Current Density ◽  
High Quality

ABSTRACTThe innovative Combustion Chemical Vapor Deposition (CCVD) process is a non-vacuum technique that is being investigated to enable next generation products in several application areas including high-temperature superconductors (HTS). In combination with the Rolling Assisted Biaxially Textured Substrate (RABiTS) technology, the CCVD process has significant promise to provide low-cost, high-quality lengths of YBCO coated conductor. The CCVD technology has been used to deposit both buffer layer coatings as well as YBCO superconducting layers. A buffer layer architecture of strontium titanate and ceria have been deposited by CCVD on textured nickel substrates and optimized to appropriate thicknesses and microstructures to provide templates for growing PLD YBCO with high critical current density values. The CCVD buffer layers have been scaled to meter plus lengths with good epitaxial uniformity along the length. A short sample cut from one of the lengths enabled high critical current density PLD YBCO. Films of CCVD YBCO superconductors have been grown on single crystal substrates with critical current densities over 1 MA/cm2. Work is currently in progress to combine both the buffer layer and superconductor technologies to produce high-quality coupons of HTS tape made entirely by the non-vacuum CCVD process.

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