High-Sensitivity Hydrogen Sensor Based on AlGaN/GaN Heterojunction Field-Effect Transistor

2020 ◽  
Vol 20 (7) ◽  
pp. 4404-4408
Author(s):  
June-Heang Choi ◽  
Tuan Anh Vuong ◽  
Hyungtak Kim ◽  
Ho-Young Cha
Keyword(s):  
Power Consumption ◽  
Barrier Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Sensitivity ◽  
Hydrogen Sensor ◽  
Hydrogen Gas ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
Effect Transistor

We have developed a Pd-functionalized hydrogen gas sensor based on a recessed AlGaN/GaN heterostructure field-effect transistor. The AlGaN barrier layer under the Pd catalyst was partially etched to enhance its sensitivity. Both low-power consumption and high sensitivity were achieved by employing a recessed structure. Sensor characterization was carried out at the temperature range from room temperature to 250 °C, among which the best sensing characteristics were observed at 200 °C. A sensitivity of 380% with a response time of 0.25 s was achieved at a bias voltage of 0.3 V at 200 °C under a hydrogen exposure concentration of 4%. The standby power consumption was only 2 μW for the sensing area of 100×28 μm2 due to the low standby current, which was caused by the recessed AlGaN barrier layer.

scholarly journals Simple and rapid gas sensing using a single-walled carbon nanotube field-effect transistor-based logic inverter

2021 ◽  
Author(s):  
Salomé Forel ◽  
Leandro Sacco ◽  
Alice Castan ◽  
Ileana Florea ◽  
Costel Sorin Cojocaru
Keyword(s):  
Carbon Nanotube ◽  
Power Consumption ◽  
Data Processing ◽  
Gas Sensor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gas Sensing ◽  
Single Walled Carbon Nanotube ◽  
Effect Transistor ◽  
System Miniaturization

We design a gas sensor by combining two SWCNT-FET devices in an inverter configuration enabling a better system miniaturization together with a reduction of power consumption and ease of data processing.

High-sensitivity detection of Concanavalin A using MoS2-based field effect transistor biosensor

2021 ◽  
Vol 54 (24) ◽  
pp. 245401
Author(s):  
Mingyang Ma ◽  
Lemeng Chao ◽  
Yuhang Zhao ◽  
Jiafeng Ding ◽  
Zhongchao Huang ◽  
...  
Keyword(s):  
Concanavalin A ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Sensitivity ◽  
Effect Transistor ◽  
High Sensitivity Detection ◽  
Sensitivity Detection

scholarly journals Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design

2020 ◽  
Vol 2020 ◽  
pp. 1-7
Author(s):  
Mathan Natarajamoorthy ◽  
Jayashri Subbiah ◽  
Nurul Ezaila Alias ◽  
Michael Loong Peng Tan
Keyword(s):  
Power Consumption ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Static Noise Margin ◽  
Noise Margin ◽  
Average Power Consumption ◽  
Sram Design ◽  
Effect Transistor ◽  
Static Noise

The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects. Graphene nanoribbon field-effect transistor (GNRFET) is an emerging technology that can potentially solve the issues of the conventional planar MOSFET imposed by quantum mechanical (QM) effects. GNRFET can also be used as static random-access memory (SRAM) circuit design due to its remarkable electronic properties. For high-speed operation, SRAM cells are more reliable and faster to be effectively utilized as memory cache. The transistor sizing constraint affects conventional 6T SRAM in a trade-off in access and write stability. This paper investigates on the stability performance in retention, access, and write mode of 15 nm GNRFET-based 6T and 8T SRAM cells with that of 16 nm FinFET and 16 nm MOSFET. The design and simulation of the SRAM model are simulated in synopsys HSPICE. GNRFET, FinFET, and MOSFET 8T SRAM cells give better performance in static noise margin (SNM) and power consumption than 6T SRAM cells. The simulation results reveal that the GNRFET, FinFET, and MOSFET-based 8T SRAM cells improved access static noise margin considerably by 58.1%, 28%, and 20.5%, respectively, as well as average power consumption significantly by 97.27%, 99.05%, and 83.3%, respectively, to the GNRFET, FinFET, and MOSFET-based 6T SRAM design.

A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor

2001 ◽  
Vol 16 (12) ◽  
pp. 997-1001 ◽  
Author(s):  
Kun-Wei Lin ◽  
Chin-Chuan Cheng ◽  
Shiou-Ying Cheng ◽  
Kuo-Hui Yu ◽  
Chih-Kai Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Hydrogen Sensor ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Effect Transistor

Real-time and selective detection of nitrates in water using graphene-based field-effect transistor sensors

2018 ◽  
Vol 5 (8) ◽  
pp. 1990-1999 ◽  
Author(s):  
Xiaoyan Chen ◽  
Haihui Pu ◽  
Zipeng Fu ◽  
Xiaoyu Sui ◽  
Jingbo Chang ◽  
...  
Keyword(s):  
Real Time ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Selectivity ◽  
High Sensitivity ◽  
Selective Detection ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Modified Graphene ◽  
Benzyltriethylammonium Chloride

A benzyltriethylammonium chloride-modified graphene field-effect transistor sensor has high sensitivity, high selectivity and rapid response for nitrate detection.

On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas Sensor

2012 ◽  
Vol 33 (6) ◽  
pp. 788-790 ◽  
Author(s):  
Chien-Chang Huang ◽  
Huey-Ing Chen ◽  
Tai-You Chen ◽  
Chi-Shiang Hsu ◽  
Chun-Chia Chen ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Electroless Plating ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Hydrogen Gas ◽  
Effect Transistor ◽  
Gan Heterostructure
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