Temperature Dependence of Low Frequency Noise in Silicon on Insulator Tunneling Field Effect Transistor
2020 ◽
Vol 20
(8)
◽
pp. 4699-4703
Keyword(s):
In this work, noise mechanism of a tunneling field-effect transistor (TFET) on a silicon-on-insulator substrate was studied as a function of temperature. The results show that the drain current and subthreshold slope increase with increase in temperature. This temperature dependence is likely caused by the generation of greater current flow owing to decreased silicon band gap and leakage. Further, the TFET noise decreases with increase in temperature. Therefore, the effective tunneling length between the source and the channel appears to decrease and Poole–Frenkel tunneling occurs.
2018 ◽
Vol 57
(4S)
◽
pp. 04FD19
◽
1991 ◽
Vol 38
(8)
◽
pp. 1883-1888
◽
Keyword(s):
2006 ◽
Vol 45
(4B)
◽
pp. 3606-3608
◽
2014 ◽
Vol 7
(3)
◽
pp. 326-336
Keyword(s):
TRANSPORT AND NOISE FEATURES IN AlGaN/GaN FIELD EFFECT TRANSISTOR WITH NANOMETER-SCALING GATE LENGTH
2005 ◽
Vol 04
(05n06)
◽
pp. 1001-1006
Keyword(s):
Keyword(s):
Keyword(s):
2021 ◽