Modeling of threshold voltage, mobility, drain current and subthreshold leakage current in virgin and irradiated silicon-on-insulator fin-shaped field effect transistor device

2011 ◽  
Vol 109 (8) ◽  
pp. 084504 ◽  
Author(s):  
S. S. Rathod ◽  
A. K. Saxena ◽  
S. Dasgupta
Keyword(s):  
Leakage Current ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Silicon On Insulator ◽  
Subthreshold Leakage ◽  
Effect Transistor

scholarly journals An Improved UU-MESFET with High Power Added Efficiency

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 573 ◽  
Author(s):  
Hujun Jia ◽  
Mei Hu ◽  
Shunwei Zhu
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
The Relationship

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

Temperature Dependence of Low Frequency Noise in Silicon on Insulator Tunneling Field Effect Transistor

2020 ◽  
Vol 20 (8) ◽  
pp. 4699-4703
Author(s):  
Hyun-Dong Song ◽  
Hyeong-Sub Song ◽  
Sunil Babu Eadi ◽  
Hyun-Woong Choi ◽  
Ga-Won Lee ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Drain Current ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Increase With Increase ◽  
Effect Transistor ◽  
Insulator Substrate

In this work, noise mechanism of a tunneling field-effect transistor (TFET) on a silicon-on-insulator substrate was studied as a function of temperature. The results show that the drain current and subthreshold slope increase with increase in temperature. This temperature dependence is likely caused by the generation of greater current flow owing to decreased silicon band gap and leakage. Further, the TFET noise decreases with increase in temperature. Therefore, the effective tunneling length between the source and the channel appears to decrease and Poole–Frenkel tunneling occurs.

scholarly journals Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Jae-Hoon Lee ◽  
Jung-Hee Lee
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Film Growth ◽  
Drain Current ◽  
Device Performance ◽  
Wetting Layer ◽  
Si Substrate ◽  
Effect Transistor ◽  
Gan Heterostructure

A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111) substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a compressively stressed film growth than conventional Al precoverage on Si surface. The metal semiconductor field effect transistor (MESFET), fabricated on the AlGaN/GaN heterostructure grown with the AlSiC layer, exhibited normally on characteristics, such as threshold voltage of −2.3 V, maximum drain current of 370 mA/mm, and transconductance of 124 mS/mm.

Two-dimensional threshold voltage model of a nanoscale silicon-on-insulator tunneling field-effect transistor

2013 ◽  
Vol 22 (3) ◽  
pp. 038501 ◽  
Author(s):  
Yu-Chen Li ◽  
He-Ming Zhang ◽  
Yu-Ming Zhang ◽  
Hui-Yong Hu ◽  
Bin Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon On Insulator ◽  
Two Dimensional ◽  
Effect Transistor ◽  
Threshold Voltage Model

scholarly journals Exploration of Ion Sensitive Field-Effect Transistor With Dielectric Properties

2021 ◽  
Author(s):  
Abhishek Kumar ◽  
Suman Lata Tripathi
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Environmental Changes ◽  
Drain Current ◽  
Ion Concentration ◽  
Oxide Semiconductor ◽  
Oxide Surface ◽  
Effect Transistor ◽  
Transistor Mos

Abstract Environmental changes and increased virus effects in COVID-19 like the situation is forcing the design and researchers to develop highly sensitive, low power and low cost mean to detect the presence of biomolecules of different shapes, sizes, and their effects on the human being. Ion-sensitive field-effect transistor (IS-FET) is a biological sensor based on the architecture of metal oxide semiconductor field-effect transistor (MOS-FET). The gate terminal is replaced with a hollow space filled by electrolyte solution and reference electrode at the external surface. The biomolecular enzyme in contact with membrane enters in solution induce net DC potential, alter the oxide surface. The alteration of surface puts variation in threshold voltage and maps on the deflection of drain current. ISFET measures the concentration of charged particles (ions) in the solution; variation into ion concentration produces deflection in the drain current. In this work numerical simulation of ISFET is performed with ENBIOS-2D Lab at Nanohub platform with dielectric SiO2, Al2O3, HfO2 with NaCl and KCl in solution. Channel resistance and capacitance with 3-different electric shows a large variation of capacitance, result in threshold voltage i.e. 318.2 mV with SiO2 and 319.2 mV with Al2O3.

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