Analysis of Low Frequency Drain Current Model for Silicon Nanowire Gate-All-Around Field Effect Transistor

2014 ◽  
Vol 7 (3) ◽  
pp. 326-336
Author(s):  
Awanit Sharma
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Current Model ◽  
Low Frequency ◽  
Drain Current ◽  
Effect Transistor

A Unified Drain–Current Model of Silicon Nanowire Field-Effect Transistor (SiNWFET) for Performance Metric Evaluation

2014 ◽  
Vol 6 (2) ◽  
pp. 354-360 ◽  
Author(s):  
Norazlin Bahador ◽  
Michael Loong Peng Tan ◽  
M. T. Ahmadi ◽  
Razali Ismail
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Current Model ◽  
Drain Current ◽  
Performance Metric ◽  
Effect Transistor

Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket

2016 ◽  
Vol 59 ◽  
pp. 30-36 ◽  
Author(s):  
Ping Wang ◽  
YiQi Zhuang ◽  
Cong Li ◽  
Zhi Jiang ◽  
YuQi Liu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Current Model ◽  
Drain Current ◽  
Double Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Temperature Dependence of Low Frequency Noise in Silicon on Insulator Tunneling Field Effect Transistor

2020 ◽  
Vol 20 (8) ◽  
pp. 4699-4703
Author(s):  
Hyun-Dong Song ◽  
Hyeong-Sub Song ◽  
Sunil Babu Eadi ◽  
Hyun-Woong Choi ◽  
Ga-Won Lee ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Drain Current ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Increase With Increase ◽  
Effect Transistor ◽  
Insulator Substrate

In this work, noise mechanism of a tunneling field-effect transistor (TFET) on a silicon-on-insulator substrate was studied as a function of temperature. The results show that the drain current and subthreshold slope increase with increase in temperature. This temperature dependence is likely caused by the generation of greater current flow owing to decreased silicon band gap and leakage. Further, the TFET noise decreases with increase in temperature. Therefore, the effective tunneling length between the source and the channel appears to decrease and Poole–Frenkel tunneling occurs.

Two‐dimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field‐effect transistor

2017 ◽  
Vol 12 (1) ◽  
pp. 11-16 ◽  
Author(s):  
Dheeraj Sharma ◽  
Bhagwan Ram Raad ◽  
Dharmendra Singh Yadav ◽  
Pravin Kondekar ◽  
Kaushal Nigam
Keyword(s):  
Electric Field ◽  
Work Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Current Model ◽  
Drain Current ◽  
Two Dimensional ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

A Compact Physical Drain Current Model of Multitube Carbon Nanotube Field Effect Transistor Including Diameter Dispersion Effects

2021 ◽  
Vol 68 (12) ◽  
pp. 6571-6579
Author(s):  
Yuming Zhang ◽  
Yang Yang ◽  
Tao Yang ◽  
Yong Zhang
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Current Model ◽  
Drain Current ◽  
Dispersion Effects ◽  
Effect Transistor
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