Improving the Sensitivity of an Organic Photodetector by Adding a Polar Solvent to the Hole-Transport Layer for Indirect X-ray Detection

2021 ◽  
Vol 21 (5) ◽  
pp. 2992-2997
Author(s):  
Hailiang Liu ◽  
Jehoon Lee ◽  
Jungwon Kang
Keyword(s):  
Chemical Structure ◽  
Performance Enhancement ◽  
Polar Solvent ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
X Ray ◽  
Styrene Sulfonate ◽  
Organic Photodetector ◽  
Dmso Treatment

In this work, we investigated how the performance enhancement of an organic X-ray detector was improved by adding a dimethyl sulfoxide (DMSO) polar solvent to poly(3, 4-ethylene dioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) hole-transport layer. The changes in the properties, such as surface roughness, chemical structure, sheet resistance, and absorbance, of the PEDOT:PSS film caused by the DMSO treatment were examined. The application of DMSO treatment lowered the resistance of the PEDOT:PSS film because of the removal of PSS and the chemical structure change after DMSO treatment, and thus the transport of light-induced carriers was increased. The organic detector treated with 10 vol% DMSO showed the highest collected current density (CCD) of 357.42 nA/cm2 and highest sensitivity of 2.58 mA/Gy ·cm2, which were 31.88% and 32.31% higher than the CCD and sensitivity of the detector without DMSO treatment.

Improvement of the Sensitivity of Indirect Organic X-ray Detector Using Conductivity Change of Hole Transport Layer

2020 ◽  
Vol 12 (4) ◽  
pp. 550-555
Author(s):  
Kyunghan Yoo ◽  
Daehee Ban ◽  
Jungwon Kang
Keyword(s):  
Dipole Moment ◽  
Polar Solvent ◽  
Process Condition ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Optimal Process ◽  
X Ray ◽  
Conductivity Change

In this paper, we report on our study of the sensitivity of an indirect-type organic X-ray detector, which depends on the conductivity of the hole-transport layer composed of PEDOT:PSS. The polar solvent, dimethylformamide (DMF), was mixed with the PEDOT:PSS solution to improve the conductivity of the HTL. When the DMF was added to the PEDOT:PSS solution, the conductive PEDOT fragments distributed more uniformly because of the high dipole moment of the DMF. In order to find the optimal process condition, the blending ratio of DMF and the baking condition of the PEDOT:PSS layer were examined. The detector with the PEDOT:PSS layer fabricated with 50 wt% DMF added and 160 °C baking for 30 min had the highest sensitivity, of 1.988 mA/Gy · cm2, which was 61.23% higher than the sensitivity of the detector with the pristine PEDOT:PSS layer.

scholarly journals Improvement of Quantum Dot Light Emitting Device Characteristics by CdSe/ZnS Blended with HMDS (Hexamethyldisilazane)

2020 ◽  
Vol 10 (17) ◽  
pp. 6081
Author(s):  
Junekyun Park ◽  
Eunkyu Shin ◽  
Jongwoo Park ◽  
Yonghan Roh
Keyword(s):  
Quantum Dot ◽  
Photoelectron Spectroscopy ◽  
Surface Defects ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
Atmospheric Conditions ◽  
Light Emitting ◽  
X Ray

We demonstrated the way to improve the characteristics of quantum dot light emitting diodes (QD-LEDs) by adding a simple step to the conventional fabrication process. For instance, we can effectively deactivate the surface defects of quantum dot (QD) (e.g., CdSe/ZnS core-shell QDs in the current work) with the SiO bonds by simply mixing QDs with hexamethyldisilazane (HMDS) under atmospheric conditions. We observed the substantial improvement of device characteristics such that the current efficiency, the maximum luminance, and the QD lifetime were improved by 1.7–1.8 times, 15–18%, and nine times, respectively, by employing this process. Based on the experimental data (e.g., energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS)), we estimated that the growth of the SiOx on the surface of QDs is self-limited: the SiOx are effective to passivate the surface defects of QDs without deteriorating the intrinsic properties including the color-purity of QDs. Second, we proposed that the emission profiling study can lead us to the fundamental understanding of charge flow in each layer of QD-LEDs. Interestingly enough, many problems related to the charge-imbalance phenomenon were simply solved by selecting the combination of thicknesses of the hole transport layer (HTL) and the electron transport layer (ETL).

Performance Enhancement of Conventional Polymer Solar Cells with TTF-py-Modified PEDOT:PSS Film as the Hole Transport Layer

2019 ◽  
Vol 2 (9) ◽  
pp. 6577-6583 ◽  
Author(s):  
Le Liu ◽  
Fenfen Li ◽  
Chengjie Zhao ◽  
Fuzhen Bi ◽  
Tonggang Jiu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Performance Enhancement ◽  
Polymer Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer

Improved power conversion efficiency of perovskite solar cells using highly conductive WOx doped PEDOT:PSS

2018 ◽  
Vol 42 (19) ◽  
pp. 16075-16082 ◽  
Author(s):  
Anil Kanwat ◽  
V. Sandhya Rani ◽  
Jin Jang
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Power Conversion ◽  
Perovskite Solar Cells ◽  
Cost Effective ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Styrene Sulfonate ◽  
Poly Styrene Sulfonate

Poly(3,4-thylenedioxythiophene):poly(styrene sulfonate), PEDOT:PSS, is a popular and cost effective conducting polymer for electrodes that can also be used as a hole transport layer (HTL) in optoelectronics.

Development of Non-acidic Poly(ethylene dioxythiophene):poly(styrene sulfonate) for Organic and Hybrid Photovoltaic Devices

2011 ◽  
Vol 1348 ◽  
Author(s):  
Yun-Ju Lee ◽  
Summer R. Ferreira ◽  
R. Guild Copeland ◽  
Diana L. Moore ◽  
Julia W. P. Hsu
Keyword(s):  
Acid Methyl Ester ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Device Performance ◽  
Zno Nanoparticle ◽  
Styrene Sulfonate ◽  
Poly Ethylene ◽  
Poly Styrene Sulfonate ◽  
The Impact

ABSTRACTWe demonstrate improved compatibility of poly(ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole transport layer with acid-sensitive materials by addition of a simple base, NaOH or NH4OH, to the aqueous suspension to increase pH. Addition of NaOH to the acidic PEDOT:PSS allowed the deposition of PEDOT:PSS on top of an inverted poly(3-hexylthiophene):ZnO nanoparticle blend hybrid photovoltaic device, and improved device performance due to preservation of the ZnO electron acceptor. To quantitatively investigate the impact of base addition to hole transport layer properties and device performance, we deposited PEDOT:PSS with different pH values on inverted poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester bulk heterojunction devices. We find that NaOH modification results in a substantial work function decrease and series resistance increase. In contrast, the volatile NH4OH leaves PEDOT:PSS with minimal changes in film properties and device performance.

scholarly journals Combustion Processed Nickel Oxide and Zinc Doped Nickel Oxide Thin Films as a Hole Transport Layer for Perovskite Solar Cells

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 627
Author(s):  
Ponmudi Selvan Thiruchelvan ◽  
Chien-Chih Lai ◽  
Chih-Hung Tsai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Nickel Oxide ◽  
Perovskite Solar Cells ◽  
Combustion Process ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
X Ray

Combustion processed nickel oxide (NiOx) thin film is considered as an alternative to the sol-gel processed hole transport layer for perovskite solar cells (PSCs). In this paper, NiOx thin film was prepared by the solution–combustion process at 250 °C, a temperature lower than the actual reaction temperature. Furthermore, the properties of the NiOx hole transport layer (HTL) in PSCs were enhanced by the incorporation of zinc (Zn) in NiOx thin films. X-ray diffraction and X-ray photoelectron spectroscopy results revealed that the formation of NiOx was achieved at lower annealing temperature, which confirms the process of the combustion reaction. The electrical conductivity was greatly improved with Zn doping into the NiOx crystal lattice. Better photoluminescence (PL) quenching, and low PL lifetime decay were responsible for better charge separation in 5% Zn doped NiOx, which results in improved device performance of PSCs. The maximum power conversion efficiency of inverted PSCs made with pristine NiOx and 5% Zn-NiOx as the HTL was 13.62% and 14.87%, respectively. Both the devices exhibited better stability than the PEDOT:PSS (control) device in an ambient condition.

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