Controlling size and distribution of Ag nanoparticles in near surface of SiO2 glass by low-energy ion implantation

2021 ◽  
Vol 11 (12) ◽  
pp. 2010-2014
Author(s):  
Xiaodong Zhou ◽  
Erlei Wang ◽  
Sihua Zhou ◽  
Honglei Yuan ◽  
Yongmei Wang ◽  
...  
Keyword(s):  
Grain Size ◽  
Ion Implantation ◽  
Metal Nanoparticles ◽  
Plasmon Resonance ◽  
Ag Nanoparticles ◽  
Resonance Effect ◽  
Low Energy ◽  
Implantation Energy ◽  
Near Surface ◽  
Implantation Method

Ag nanoparticles were embedded in the near surface of SiO2 substrate and fabricated by low-energy ion implantation method in this study. The optical and structural properties of Ag implanted samples were investigated using optical spectroscopy, transmission electron microscope (TEM) and atomic force microscopy (AFM). The grain size and distribution of nanoparticles embedded in the substrate were characterized by TEM and AFM characterization. Results showed that the grain size and depth of distribution of nanoparticles were controlled by changing the ion implantation energy and dose. Furthermore, the Ag nanoparticles embedded near surface of substrate prepared by this low-energy ion implantation method had strong local surface plasmon resonance (LSPR) characteristics. Our work demonstrates a practical means for fabrication of metal nanoparticles with controllable size and distribution using ion implantation technology, which is helpful to the application of local plasmon resonance effect of metal nanoparticles.

scholarly journals Silver Nanoparticles in Porous Germanium

2019 ◽  
Vol 3 (3) ◽  
Keyword(s):  
Ion Implantation ◽  
Ag Nanoparticles ◽  
Average Diameter ◽  
Size Distribution Function ◽  
Thin Layers ◽  
Low Energy ◽  
High Dose ◽  
Near Surface ◽  
Backscattered Electrons ◽  
20 Nm

Recent experiments on fabrication of nanoporous Si and Ge layers with Ag nanoparticles by low-energy high-dose ion implantation are discussed. Ag+-ion implantation of single-crystal c-Si and c-Ge at low-energy (E = 30 keV) highdoses (D = 1.25·1015 - 1.5·1017 ion/cm2 ) and current density (J = 2-15 μA/cm2 ) was carried out for this purpose. The changes of Si and Ge surface morphology after ion implantation were studied by scanning electron and atom-force microscopy. The near surface area of samples was also analyzed by diffraction of the backscattered electrons and energydispersive X-ray microanalysis. Amorphization of near-surface layer was observed at the lowest implantation doses of c-Si. Ag nanoparticles were synthesized and uniformly distributed over the near Si surface when the threshold dose of 3.1·1015 ion/cm2 exceeded. At a dose of more than 1017 ion/cm2 , the formation of a surface nanoporous PSi structure was detected. Ag nanoparticle size distribution function became bimodal and the largest particles were localized along Si-pore walls. In the case of Ge substrates, as a result of the implantation on the c-Ge surface, a porous amorphous PGe layer of a spongy structure was formed consisting of a network of intersecting Ge nanowires with an average diameter of ~ 10-20 nm. At the ends of the nanowires, the synthesis of Ag nanoparticles was observed. It was found that the formation of pores during Ag+-ion implantation was accompanied by efficient spattering of the Si and Ge surface. Thus, ion implantation is suggested to be used for the formation of nanoporous semiconductor thin layers for industry, which could be easily combined with the crystalline matrix for various applications.

Effects of Low Energy Carbon Ion Implantation on the Material Properties of InAs/GaAs Quantum Dots with Variation in Capping Layer

2015 ◽  
Vol 1743 ◽  
Author(s):  
S. Upadhyay ◽  
A Mandal ◽  
A. Basu ◽  
P. Singh ◽  
S. Chakrabarti
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Blue Shift ◽  
Low Energy ◽  
Stress Generation ◽  
Carbon Ions ◽  
Implantation Energy ◽  
Carbon Ion ◽  
Capping Layer ◽  
Pl Intensity

ABSTRACTUnder controlled irradiation of low energy carbon ions, photoluminescence (PL) study of InAs quantum dots prepared with different capping structures (GaAs and InAlGaAs) was carried out. Samples were investigated by varying implantation energy from 15 keV to 50 keV with fluence ranging between 3 × 1011ions/cm2 and 8 × 1011 ions/cm2. For fixed fluence of 4 × 1011ions/cm2, low temperature PL showed enhancement in a certain range of energy, along with a blue shift in the PL peak wavelength. In contrast, with varying fluence at fixed implantation energy of 50 keV, PL enhancement was not significant, rather a drop in PL intensity was noted at higher fluence from 5 × 1011 to 8 × 1011 ions/cm2. Moreover, carbon ion implantation caused a blue shift in the PL emission peak for both energy and fluence variations. PL intensity suppression was possibly caused by the formation of non-radiative recombination centers (NRCs) near the capping layer, while the corresponding blue shift might be attributed to stress generation in the capping layer due to implantation. As-grown and implanted InAlGaAs capped samples did not exhibit much variation in full width at half maxima of PL spectra; however, significant variation was observed for the GaAs capped sample. These results validate that InAlGaAs-capped QDs are more immune to ion implantation.

Study of Ion Implanted Copper Laser Mirrors by Spectroscopic Ellipsometry

1986 ◽  
Vol 74 ◽  
Author(s):  
P. G. Snyder ◽  
A. Massengale ◽  
K. Memarzadeh ◽  
J. A. Woollam ◽  
D. C. Ingram ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Implantation ◽  
Void Fraction ◽  
Spectroscopic Ellipsometry ◽  
Low Energy ◽  
Near Surface ◽  
Cu Ions ◽  
Microscopic Surface ◽  
Ion Implanted

AbstractImplantation with 400 keV Ag or Cu ions improves the near-surface microstructural quality and reflectance of diamond turned and mechanically polished flat copper laser mirrors. Spectroscopic ellipsometry is sensitive to changes in either the microscopic surface roughness, or in the nearsurface substrate void fraction, and both parameters are observed to change upon implantation. Substrate density as a function of ion fluence peaks at about 5 × 10 15cm-2. Low energy (300 eV) Ar ion implantation can cause either a reduction or increase in microscopic surface roughness, depending on fluence.

scholarly journals Advances in the Development of Phage-Based Probes for Detection of Bio-Species

Biosensors ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 30
Author(s):  
Kameshpandian Paramasivam ◽  
Yuanzhao Shen ◽  
Jiasheng Yuan ◽  
Ibtesam Waheed ◽  
Chuanbin Mao ◽  
...  
Keyword(s):  
Metal Nanoparticles ◽  
Plasmon Resonance ◽  
Resonance Effect ◽  
Dark Field ◽  
Biological Species ◽  
Detection Methods ◽  
Arbitrary Sequence ◽  
Single Chain ◽  
Animal Cells ◽  
Gold Silver

Bacteriophages, abbreviated as “phages”, have been developed as emerging nanoprobes for the detection of a wide variety of biological species, such as biomarker molecules and pathogens. Nanosized phages can display a certain length of exogenous peptides of arbitrary sequence or single-chain variable fragments (scFv) of antibodies that specifically bind to the targets of interest, such as animal cells, bacteria, viruses, and protein molecules. Metal nanoparticles generally have unique plasmon resonance effects. Metal nanoparticles such as gold, silver, and magnetism are widely used in the field of visual detection. A phage can be assembled with metal nanoparticles to form an organic–inorganic hybrid probe due to its nanometer-scale size and excellent modifiability. Due to the unique plasmon resonance effect of this composite probe, this technology can be used to visually detect objects of interest under a dark-field microscope. In summary, this review summarizes the recent advances in the development of phage-based probes for ultra-sensitive detection of various bio-species, outlining the advantages and limitations of detection technology of phage-based assays, and highlighting the commonly used editing technologies of phage genomes such as homologous recombination and clustered regularly interspaced palindromic repeats/CRISPR-associated proteins system (CRISPR-Cas). Finally, we discuss the possible scenarios for clinical application of phage-probe-based detection methods.

scholarly journals Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

2021 ◽  
Vol 264 ◽  
pp. 05037
Author(s):  
Ilkhom Bekpulatov ◽  
Ilkhom Turapov ◽  
Sevara Abraeva ◽  
Jakhongir Normuminov
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Electron Spectroscopy ◽  
Surface Region ◽  
Low Energy ◽  
Subsequent Annealing ◽  
Metal Silicide ◽  
Slow Electron ◽  
Near Surface ◽  
Nanoscale Films

Using the methods of electron spectroscopy and slow electron diffraction, we studied the processes of the formation of nanosized metal silicide films in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba ions and alkaline elements. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. The type of surface superstructures of thin silicide films has been established.

scholarly journals Monolithic waveguide laser mode-locked by embedded Ag nanoparticles operating at 1 μm

Nanophotonics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 859-868 ◽  
Author(s):  
Rang Li ◽  
Chi Pang ◽  
Ziqi Li ◽  
Ningning Dong ◽  
Jun Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ag Nanoparticles ◽  
Optical Nonlinearity ◽  
Saturable Absorption ◽  
Waveguide Laser ◽  
Ag Nps ◽  
Optical Pump ◽  
Near Surface ◽  
Diamond Saw ◽  
Laser Devices

AbstractMonolithic waveguide laser devices are required to achieve on-chip lasing. In this work, a new design of a monolithic device with embedded Ag nanoparticles (NPs) plus the Nd:YAG ridge waveguide has been proposed and implemented. By using Ag+ ion implantation, the embedded Ag NPs are synthesized on the near-surface region of the Nd:YAG crystal, resulting in the significant enhancement of the optical nonlinearity of Nd:YAG and offering saturable absorption properties of the crystal at a wide wavelength band. The subsequent processing of the O5+ ion implantation and diamond saw dicing of crystal finally leads to the fabrication of monolithic waveguide with embedded Ag NPs. Under an optical pump, the Q-switched mode-locked waveguide lasers operating at 1 μm is realized with the pulse duration of 29.5 ps and fundamental repetition rate of 10.53 GHz, owing to the modulation of Ag NPs through evanescent field interaction with waveguide modes. This work introduces a new approach in the application of monolithic ultrafast laser devices by using embedded metallic NPs.

scholarly journals Effect of Low-Energy Nitrogen Ion Implantation on Friction and Wear Properties of Ion-Plated TiC Coating

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 775
Author(s):  
Zhongyu Dou ◽  
Yinglu Guo ◽  
Faguang Zhang ◽  
Dianxi Zhang
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Implantation Dose ◽  
Low Energy ◽  
Wear Properties ◽  
Implantation Energy ◽  
Nitrogen Ion Implantation ◽  
Friction Performance ◽  
Nitrogen Ion ◽  
Tribological Analysis

To further improve the performance of the coated tools, we investigated the effects of low-energy nitrogen ion implantation on surface structure and wear resistance for TiC coatings deposited by ion plating. In this experiment, an implantation energy of 40 keV and a dose of 2 × 1017 to 1 × 1018 (ions/cm2) were used to implant N ions into the TiC coatings. The results indicate that the surface roughness of the coating increases first and then decreases with the increase of ion implantation dose. After ion implantation, the surface of the coating will soften and reduce the hardness, and the production of TiN phase will gradually increase the hardness. Nitrogen ion implantation can reduce the friction coefficient of the TiC coating and improve the friction performance. In terms of wear resistance, the coating with an implant dose of 1×1018 ions/cm2 has the greatest improvement in wear resistance. Tribological analysis shows that the improvement in the performance of TiC coatings implanted with N ions is mainly due to the effect of the lubricating implanted layer. The implanted layer mainly exists in the form of amorphous TiC, TiN phase, and sp2C–C phase.

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