scholarly journals Phonon scattering and exciton localization: molding exciton flux in two dimensional disorder energy landscape

eLight ◽  
2021 ◽  
Vol 1 (1) ◽  
Author(s):  
Pengfei Qi ◽  
Yang Luo ◽  
Beibei Shi ◽  
Wei Li ◽  
Donglin Liu ◽  
...  
Keyword(s):  
Thermal Management ◽  
Carrier Mobility ◽  
Diffusion Length ◽  
Phonon Scattering ◽  
Energy Landscape ◽  
Effective Diffusion ◽  
Two Dimensional ◽  
Exciton Localization ◽  
Exciton Diffusion ◽  
Ultrafast Relaxation

AbstractTwo dimensional excitonic devices are of great potential to overcome the dilemma of response time and integration in current generation of electron or/and photon based systems. The ultrashort diffusion length of exciton arising from ultrafast relaxation and low carrier mobility greatly discounts the performance of excitonic devices. Phonon scattering and exciton localization are crucial to understand the modulation of exciton flux in two dimensional disorder energy landscape, which still remain elusive. Here, we report an optimized scheme for exciton diffusion and relaxation dominated by phonon scattering and disorder potentials in WSe2 monolayers. The effective diffusion coefficient is enhanced by > 200% at 280 K. The excitons tend to be localized by disorder potentials accompanied by the steadily weakening of phonon scattering when temperature drops to 260 K, and the onset of exciton localization brings forward as decreasing temperature. These findings identify that phonon scattering and disorder potentials are of great importance for long-range exciton diffusion and thermal management in exciton based systems, and lay a firm foundation for the development of functional excitonic devices.

scholarly journals Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 674 ◽  
Author(s):  
Pengying Chang ◽  
Xiaoyan Liu ◽  
Fei Liu ◽  
Gang Du
Keyword(s):  
Quantum Confinement ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Phonon Scattering ◽  
Field Effect Transistors ◽  
Temperature Inversion ◽  
Two Dimensional ◽  
Mass Approximation ◽  
Mobility Degradation ◽  
Dual Gate

This work focuses on the effect of remote phonon arising from the substrate and high-κ gate dielectric on electron mobility in two-dimensional (2D) InSe field-effect transistors (FETs). The electrostatic characteristic under quantum confinement is derived by self-consistently solving the Poisson and Schrödinger equations using the effective mass approximation. Then mobility is calculated by the Kubo–Greenwood formula accounting for the remote phonon scattering (RPS) as well as the intrinsic phonon scatterings, including the acoustic phonon, homopolar phonon, optical phonon scatterings, and Fröhlich interaction. Using the above method, the mobility degradation due to remote phonon is comprehensively explored in single- and dual-gate InSe FETs utilizing SiO2, Al2O3, and HfO2 as gate dielectric respectively. We unveil the origin of temperature, inversion density, and thickness dependence of carrier mobility. Simulations indicate that remote phonon and Fröhlich interaction plays a comparatively major role in determining the electron transport in InSe. Mobility is more severely degraded by remote phonon of HfO2 dielectric than Al2O3 and SiO2 dielectric, which can be effectively insulated by introducing a SiO2 interfacial layer between the high-κ dielectric and InSe. Due to its smaller in-plane and quantization effective masses, mobility begins to increase at higher density as carriers become degenerate, and mobility degradation with a reduced layer number is much stronger in InSe compared with MoS2.

scholarly journals Local Energy Landscape Drives Long-Range Exciton Diffusion in Two-Dimensional Halide Perovskite Semiconductors

2021 ◽  
Vol 12 (16) ◽  
pp. 4003-4011
Author(s):  
Alan Baldwin ◽  
Géraud Delport ◽  
Kai Leng ◽  
Rosemonde Chahbazian ◽  
Krzysztof Galkowski ◽  
...  
Keyword(s):  
Long Range ◽  
Energy Landscape ◽  
Local Energy ◽  
Two Dimensional ◽  
Exciton Diffusion ◽  
Halide Perovskite

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

Determining the exciton diffusion length of copper phthalocyanine in operating planar-heterojunction organic solar cells

2020 ◽  
Vol 89 (3) ◽  
pp. 30201 ◽  
Author(s):  
Xi Guan ◽  
Shiyu Wang ◽  
Wenxing Liu ◽  
Dashan Qin ◽  
Dayan Ban
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Diffusion Length ◽  
Copper Phthalocyanine ◽  
Short Circuit ◽  
Thick Layer ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Exciton Diffusion ◽  
Exciton Diffusion Length

Organic solar cells based on planar copper phthalocyanine (CuPc)/C60 heterojunction have been characterized, in which a 2 nm-thick layer of bathocuproine (BCP) is inserted into the CuPc layer. The thin layer of BCP allows hole current to tunnel it through but blocks the exciton diffusion, thereby altering the steady-state exciton profile in the CuPc zone (zone 1) sandwiched between BCP and C60. The short-circuit current density (JSC) of device is limited by the hole-exciton scattering effect at the BCP/CuPc (zone 1) interface. Based on the variation of JSC with the width of zone 1, the exciton diffusion length of CuPc is deduced to be 12.5–15 nm. The current research provides an easy and helpful method to determine the exciton diffusion lengths of organic electron donors.

scholarly journals Manipulation of hot carrier cooling dynamics in two-dimensional Dion–Jacobson hybrid perovskites via Rashba band splitting

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jun Yin ◽  
Rounak Naphade ◽  
Partha Maity ◽  
Luis Gutiérrez-Arzaluz ◽  
Dhaifallah Almalawi ◽  
...  
Keyword(s):  
Transient Absorption ◽  
Phonon Scattering ◽  
Transient Absorption Spectroscopy ◽  
Band Model ◽  
Two Dimensional ◽  
Spintronic Devices ◽  
Hot Carrier ◽  
Band Splitting ◽  
Perovskite Materials ◽  
Spin Polarized

AbstractHot-carrier cooling processes of perovskite materials are typically described by a single parabolic band model that includes the effects of carrier-phonon scattering, hot phonon bottleneck, and Auger heating. However, little is known (if anything) about the cooling processes in which the spin-degenerate parabolic band splits into two spin-polarized bands, i.e., the Rashba band splitting effect. Here, we investigated the hot-carrier cooling processes for two slightly different compositions of two-dimensional Dion–Jacobson hybrid perovskites, namely, (3AMP)PbI4 and (4AMP)PbI4 (3AMP = 3-(aminomethyl)piperidinium; 4AMP = 4-(aminomethyl)piperidinium), using a combination of ultrafast transient absorption spectroscopy and first-principles calculations. In (4AMP)PbI4, upon Rashba band splitting, the spin-dependent scattering of hot electrons is responsible for accelerating hot-carrier cooling at longer delays. Importantly, the hot-carrier cooling of (4AMP)PbI4 can be extended by manipulating the spin state of the hot carriers. Our findings suggest a new approach for prolonging hot-carrier cooling in hybrid perovskites, which is conducive to further improving the performance of hot-carrier-based optoelectronic and spintronic devices.

Auxetic, flexible, and strain-tunable two-dimensional th-AlN for photocatalytic visible light water splitting with anisotropic high carrier mobility

2021 ◽  
Vol 9 (14) ◽  
pp. 4971-4977
Author(s):  
Mehmet Emin Kilic ◽  
Kwang-Ryeol Lee
Keyword(s):  
Optical Properties ◽  
Visible Light ◽  
Water Splitting ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Light Water ◽  
Photocatalytic Water Splitting ◽  
Electronic And Optical Properties ◽  
High Carrier Mobility ◽  
High Carrier

Tetrahexagonal AlN: a novel two-dimensional family for photocatalytic water splitting with exceptional mechanical, electronic, and optical properties.

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