Spectroscopic and mechanical studies of RF plasma-polymerized films deposited at low temperature from organosilane precursors

2020 ◽  
pp. 237-262
Author(s):  
M. Romand ◽  
N. Bahlawane ◽  
M. Charbonnier
Keyword(s):  
Low Temperature ◽  
Rf Plasma ◽  
Mechanical Studies ◽  
Plasma Polymerized Films

Enhancement of IR transparency of arsenic sulfide materials via plasma-chemical conversion of the initial arsenic monosulfide in low-temperature RF plasma

2018 ◽  
Vol 52 (1) ◽  
pp. 015203 ◽  
Author(s):  
Leonid Mochalov ◽  
Alexander Logunov ◽  
Roman Kornev ◽  
Sergey Zelentsov ◽  
Andrey Vorotyntsev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Conversion ◽  
Rf Plasma ◽  
Arsenic Sulfide ◽  
Plasma Chemical

Effect of Low Temperature RF Plasma Treatment on Electrical Properties of Junctionless InGaAs MOSFETs

2019 ◽  
Vol 8 (2) ◽  
pp. Q24-Q31
Author(s):  
Y. V. Gomeniuk ◽  
Y. Y. Gomeniuk ◽  
T. E. Rudenko ◽  
P. N. Okholin ◽  
V. I. Glotov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Rf Plasma

Low Temperature RF Plasma Annealing Using A NH3-N2 Gas Mixture

1990 ◽  
Vol 190 ◽  
Author(s):  
K. Aite ◽  
F.W. Ragay ◽  
J. Middelhoek ◽  
R. Koekoek
Keyword(s):  
Low Temperature ◽  
Rf Plasma ◽  
Gas Mixture ◽  
Plasma Annealing

Survey of low temperature rf plasma polymerization and processing

1976 ◽  
Vol 13 (2) ◽  
pp. 575-584 ◽  
Author(s):  
M. R. Havens ◽  
M. E. Biolsi ◽  
K. G. Mayhan
Keyword(s):  
Low Temperature ◽  
Plasma Polymerization ◽  
Rf Plasma

Surface Activated Flip-Chip Bonding of Laser Chips

2005 ◽  
Author(s):  
Eiji Higurashi ◽  
Masao Nakagawa ◽  
Tadatomo Suga ◽  
Renshi Sawada
Keyword(s):  
Low Temperature ◽  
Flip Chip ◽  
Bonding Temperature ◽  
Ambient Air ◽  
Failure Criteria ◽  
Rf Plasma ◽  
Cavity Surface ◽  
Si Substrate ◽  
Plasma Irradiation ◽  
Flip Chip Bonding

This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

Integrated, Dual-Function Remote Plasma-Enhanced Processing Applied to Low Damage SiO2 Etching and Removal of C-F Polymer Residues

1992 ◽  
Vol 282 ◽  
Author(s):  
T. Yasuda ◽  
G. Lucovsky
Keyword(s):  
Low Temperature ◽  
Plasma Etching ◽  
Etch Rate ◽  
Low Energy ◽  
Rf Plasma ◽  
Dual Function ◽  
Homoepitaxial Growth ◽  
Plasma Excitation ◽  
A New Technique

ABSTRACTWe report a dual-function chamber integrating (a) remote RF plasma-enhanced etching of SiO2 layers on Si(100) surfaces with low energy, <100 eV, ion bombardment and (b) in-situ removal of polymeric C-F residues that are formed on the exposed Si surfaces. Using direct plasma excitation of He and downstream introduction of CF4, an SiO2 etch rate of ̃5 nm/min was obtained at a CF4 partial pressure as low as 0.25 mTorr. An exposure to atomic-H at a substrate temperature of 250°C was effective in removing polymeric residues from the Si surface, while an exposure to reactive O-species was less effective. We achieved a low-temperature, ̃300°C, homoepitaxial growth of Si on the Si(100) surface that was subjected to plasma etching followed by an exposure to atomic-H. The electrical damage of the processed Si surfaces was evaluated by a new technique, where a device-quality SiO2 film was deposited on this surface by remote PECVD and the C-V characteristics of the MOS structure were measured.

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