Negative Capacitance Field-Effect Transistors to Address the Fundamental Limitations in Technology Scaling

Mapping Intimacies ◽

10.1201/9781003200987-8 ◽

2021 ◽

pp. 187-202

Author(s):

Harsupreet Kaur

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Technology Scaling ◽

Fundamental Limitations

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Improved Temperature Resilience and Device Performance of Negative Capacitance Reconfigurable Field Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2961876 ◽

2020 ◽

Vol 67 (2) ◽

pp. 738-744

Author(s):

Priyanka Pandey ◽

Harsupreet Kaur

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Device Performance ◽

Negative Capacitance

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Multidomain Dynamics of Ferroelectric Polarization and its Coherency-Breaking in Negative Capacitance Field-Effect Transistors

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614531 ◽

2018 ◽

Author(s):

Hiroyuki Ota ◽

Tsutomu Ikegami ◽

Koichi Fukuda ◽

Junichi Hattori ◽

Hidehiro Asai ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Ferroelectric Polarization ◽

Negative Capacitance

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Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Advanced Electronic Materials ◽

10.1002/aelm.201870051 ◽

2018 ◽

Vol 4 (11) ◽

pp. 1870051 ◽

Author(s):

Luqi Tu ◽

Xudong Wang ◽

Jianlu Wang ◽

Xiangjian Meng ◽

Junhao Chu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Effect Transistor

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MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit

Advanced Materials ◽

10.1002/adma.201800932 ◽

2018 ◽

Vol 30 (28) ◽

pp. 1800932 ◽

Author(s):

Xingqiang Liu ◽

Renrong Liang ◽

Guoyun Gao ◽

Caofeng Pan ◽

Chunsheng Jiang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Subthreshold Swing ◽

Negative Capacitance

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Channel doping effects in negative capacitance field-effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108181 ◽

2021 ◽

Vol 186 ◽

pp. 108181

Author(s):

Baoliang Liu ◽

Xiaoqing Huang ◽

Yanxin Jiao ◽

Ning Feng ◽

Xuhui Chen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Capacitance ◽

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Steep Slope p-type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614493 ◽

2018 ◽

Author(s):

Jingli Wang ◽

Xuyun Guo ◽

Zhihao Yu ◽

Zichao Ma ◽

Yanghui Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Van Der Waals ◽

Steep Slope ◽

Negative Capacitance ◽

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Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2019.2961631 ◽

2020 ◽

Vol 19 ◽

pp. 89-93

Author(s):

Jun Ma ◽

Chien Liu ◽

Wei-Dong Liu ◽

Yu-Wen Hung ◽

Yu-Chi Fan ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Capacitance Effect

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Experimental Validation of Depolarization Field Produced Voltage Gains in Negative Capacitance Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2931402 ◽

2019 ◽

Vol 66 (10) ◽

pp. 4419-4424 ◽

Author(s):

Jiuren Zhou ◽

Genquan Han ◽

Nuo Xu ◽

Jing Li ◽

Yue Peng ◽

...

Keyword(s):

Field Effect ◽

Experimental Validation ◽

Field Effect Transistors ◽

Negative Capacitance

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Retraction: “Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance” [Appl. Phys. Lett. 108, 103504 (2016)]

Applied Physics Letters ◽

10.1063/1.4975639 ◽

2017 ◽

Vol 110 (7) ◽

pp. 079902

Author(s):

Jae Hyo Park ◽

Seung Ki Joo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Capacitance ◽

Subthreshold Slope

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Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

Applied Physics Letters ◽

10.1063/1.4772982 ◽

2012 ◽

Vol 101 (25) ◽

pp. 253511 ◽

Author(s):

Y. G. Xiao ◽

Z. J. Chen ◽

M. H. Tang ◽

Z. H. Tang ◽

S. A. Yan ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Electrical Characteristics ◽

Surrounding Gate

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