Towards a Manufacturing Technology for High-Volume Production of Composite Components

Author(s):  
C D Rudd ◽  
K N Kendall

The last decade has seen strong interest from high-volume manufacturers such as the automotive industry in the development of processes which provide cost effective routes to the manufacture of components in fibre-reinforced composite materials. This paper considers one family of processes that have been targeted as offering a solution—that of resin transfer moulding (RTM)—and reviews the findings of work based at the University of Nottingham. The mechanisms involved are examined together with the variants on the basic process and the implications for high-volume production. Consideration is given to process technology, materials and the relationship between design and manufacture. A route to high-volume manufacture based upon computer aided engineering is proposed.

Up until now, really successful mechanization of the assembly cf manufactured goods has been confined to high-volume production in which a million or more assemblies per year are required for a period of several years. Here, single-purpose machines, despite their high capital cost, can often compete successfully, on purely economic grounds, with manned assembly lines. However, the number of products which are manufactured in such quantities is relatively few. Consequently, in an attempt to meet the need to increase the Gross National Product and overall productivity, engineers are now devising ways and means of mechanizing the assembly of some, at least, of the products which are manufactured in medium and even small batches. This paper describes the work being carried out in this area by the Automatic Processes Group in the Department of Production Engineering and Production Management at the University of Nottingham. Clearly, in order to move down the scale of production volume, the first step is to minimize the machine building costs. This can be done by standardization of as many features of the machines as possible so that the advantages of batch manufacturing techniques can be obtained. ‘Specially engineered’ features have to be minimized.


Author(s):  
Kyung Joong Yoon ◽  
Guosheng Ye ◽  
Srikanth Gopalan ◽  
Uday B. Pal

The anode-supported planar solid oxide fuel cell (SOFC) was fabricated by a cost-effective single step cofiring process using high shear compaction (HSC)™ anode substrate. The HSC™ process is a novel ceramic tape fabrication technique, which offers advantages in low-cost and high-volume production of the anode substrates over the conventional tape forming processes. The cell was comprised of a porous HSC™ Ni+8 mol % yttria-stabilized zirconia (YSZ) anode substrate, a porous Ni+YSZ anode barrier layer, a porous and fine-grained Ni+YSZ anode active layer, a dense YSZ electrolyte, a porous and fine-grained Ca-doped LaMnO3(LCM)+YSZ composite cathode active layer, and a porous LCM cathode current collector layer. The fabrication process involved wet powder spraying of the anode barrier layer over the HSC™ anode substrate followed by screen-printing of the remaining component layers. The cell was then cofired at 1340°C for 2 h. The microstructure and the open circuit voltage of the cell confirmed that the cell was crack-free and leak-tight. The cofired cell showed a stable and acceptable electrochemical performance at 800°C under humidified hydrogen (3–60% H2O) as fuel and air as oxidant. The anode active layer with finer and less porous microstructure increased the triple phase boundary length and improved cell performance under conditions that simulated higher fuel utilization. The material system and fabrication process presented in this work offers great advantage in low-cost and high-volume production of SOFCs, and it can be the basis for scale-up and successful commercialization of the SOFC technology.


2008 ◽  
Vol 17 (01) ◽  
pp. 15-31
Author(s):  
MENG-CHIOU WU ◽  
RUNG-BIN LIN

Multiple project wafers (MPWs) containing different chip designs from many customers serves as an important vehicle for gaining access to advanced semiconductor process technology for prototyping innovative designs or low-volume production. In this paper, a comprehensive study on the methods for determining dicing plans for MPW was carried out. Dicing plans can be used to determine the number of MPWs needed to be fabricated before chip fabrication and employed to saw the wafers after fabrication. Several methods based on integer linear programming formulation and a heuristic based on simulated annealing was proposed. Through conducting experiments with industrial test cases, these proposed methods can achieve up to 50% wafer reduction in some cases and on average 18% and 38% reduction for low- and high-volume production, respectively. This study makes a contribution to MPW dicing and is also instrumental in developing better reticle floorplanning methods.


2011 ◽  
Vol 31 (1) ◽  
Author(s):  
Walter Michaeli ◽  
Jan Wessels ◽  
Marco Pöhler ◽  
Lionel Winkelmann

Abstract Despite their outstanding properties, the use of composites is still limited. The absence of an appropriate and economic high volume production technology is the most important restriction for the use of composites. This paper presents results of the research on new high volume production chains for continuous fibre reinforced composites which are based on the separation and parallelisation of the process steps “impregnation” and “forming and curing”. Two new impregnation processes for polyurethane and epoxy resin as well as a new compression moulding technology are introduced. The production of high performance parts with a fibre volume content higher than 50% in a cycle time below 10 min is described and analyses of the impregnation quality and the mechanical properties of the parts are presented.


Author(s):  
V P Baker ◽  
W Chambers ◽  
F Taylor ◽  
N W Tester

This paper describes a project to design a new telephone transmitter/receiver capsule which could be assembled on an automatic high volume production line. The reasons why the project was undertaken are outlined together with design decisions that were taken, and the automated assembly line is described in detail. The resulting achievements and the benefits to the company are reviewed.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jort Hammer ◽  
Hidenori Matsukami ◽  
Satoshi Endo

AbstractChlorinated Paraffins (CPs) are high volume production chemicals and have been found in various organisms including humans and in environmental samples from remote regions. It is thus of great importance to understand the physical–chemical properties of CPs. In this study, gas chromatographic (GC) retention indexes (RIs) of 25 CP congeners were measured on various polar and nonpolar columns to investigate the relationships between the molecular structure and the partition properties. Retention measurements show that analytical standards of individual CPs often contain several stereoisomers. RI values show that chlorination pattern have a large influence on the polarity of CPs. Single Cl substitutions (–CHCl–, –CH2Cl) generally increase polarity of CPs. However, many consecutive –CHCl– units (e.g., 1,2,3,4,5,6-C11Cl6) increase polarity less than expected from the total number of –CHCl– units. Polyparameter linear free energy relationship descriptors show that polarity difference between CP congeners can be explained by the H-bond donating properties of CPs. RI values of CP congeners were predicted using the quantum chemically based prediction tool COSMOthermX. Predicted RI values correlate well with the experimental data (R2, 0.975–0.995), indicating that COSMOthermX can be used to accurately predict the retention of CP congeners on GC columns.


1986 ◽  
Vol 67 ◽  
Author(s):  
Chris R. Ito ◽  
M. Feng ◽  
V. K. Eu ◽  
H. B. Kim

ABSTRACTA high-volume epitaxial reactor has been used to investigate the feasibility for the production growth of GaAs on silicon substrates. The reactor is a customized system which has a maximum capacity of 39 three-inch diameter wafers and can accommodate substrates as large as eight inches in diameter. The MOCVD material growth technique was used to grow GaAs directly on p-type, (100) silicon substrates, three and five inches in diameter. The GaAs surfaces were textured with antiphase boundaries. Double-cyrstal rocking curve measurements showed single-cyrstal GaAs with an average FWHMof 520 arc seconds measured at four points over the wafer surface. Within-wafer thickness uniformity was ± 4% with a wafer-to-wafer uniformity of ± 2%. Photoluminescence spectra showed Tour peaks at 1.500, 1.483, 1.464, and 1.440 ev. Schottky diodes were fabricated on the GaAs on silicon material.


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