scholarly journals Magnetic, Structural, and Optical Properties of Low Temperature ZnMnO Grown by Atomic Layer Epitaxy

2005 ◽  
Vol 108 (5) ◽  
pp. 915-921 ◽  
Author(s):  
A. Wójcik ◽  
M. Kiecana ◽  
K. Kopalko ◽  
M. Godlewski ◽  
E. Guziewicz ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Structural And Optical Properties

OPTICAL PROPERTIES OF CdTe/ZnTe ULTRATHIN QUANTUM WELLS GROWN BY ATOMIC LAYER EPITAXY

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1667-1670 ◽  
Author(s):  
M. GARCÍA-ROCHA ◽  
I. HERNÁNDEZ-CALDERÓN
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Quantum Wells ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Diffusion Length ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Low Temperature Photoluminescence

Ultrathin quantum wells (UTQWs) of CdTe within ZnTe barriers were successfully grown by atomic layer epitaxy (ALE) on GaAs(001) substrates. ALE growth of CdTe was performed by alternate exposure of the substrate surface to individual fluxes of Cd and Te. Two different samples with 2-monolayer (ML) (substrate temperature Ts= 270° C ) and 4 ML (Ts = 290° C ) CdTe QWs were grown. Low temperature photoluminescence (PL) experiments exhibited intense and sharp peaks associated to the 2 ML QWs at 2.26 eV. In the case of the nominally 4-ML-thick QW the PL spectrum presented an intense peak around 2.13 eV and two weak features around 2.04 and 1.91 eV. The first peak is attributed to ~ 3 ML QW and the second one to ~ 4 ML QW. The dominance of the 3 ML peak is mainly attributed to Cd loss in the QW due to its substitution by Zn atoms. Due to a high diffusion length of the photogenerated carriers in the barriers, quite weak signals from the ZnTe barriers were observed in both cases. Room temperature (RT) photoreflectance (PR) spectra showed contributions from the CdTe UTQWs, the ZnTe barriers, and the GaAs substrate.

Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors

2009 ◽  
Vol 311 (4) ◽  
pp. 1096-1101 ◽  
Author(s):  
I.A. Kowalik ◽  
E. Guziewicz ◽  
K. Kopalko ◽  
S. Yatsunenko ◽  
A. Wójcik-Głodowska ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Structural And Optical Properties ◽  
Layer Deposition

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L236-L238 ◽  
Author(s):  
Kuninori Kitahara ◽  
Nobuyuki Ohtsuka ◽  
Toshihiko Ashino ◽  
Masashi Ozeki ◽  
Kazuo Nakajima
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Layer Growth ◽  
Atomic Layer Epitaxy ◽  
Layer By Layer ◽  
Gaas On Si

Optical properties of ZnSeZnTe strained layer superlattices prepared by atomic layer epitaxy

1990 ◽  
Vol 101 (1-4) ◽  
pp. 81-85 ◽  
Author(s):  
Yasushi Takemura ◽  
Shiro Dosho ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Strained Layer ◽  
Strained Layer Superlattices
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