scholarly journals Using Bulge test for the Mechanical Behavior Study of Submicrometer TiNi Alloy Thin Films

Author(s):  
Chao-Chi Huang ◽  
Chi-Wen Chen ◽  
Nguyen Tra Anh Khoa ◽  
Ming-Tzer Lin
2003 ◽  
Vol 795 ◽  
Author(s):  
Yong Xiang ◽  
Joost J. Vlassak ◽  
Maria T. Perez-Prado ◽  
Ting Y. Tsui ◽  
Andrew J. McKerrow

ABSTRACTThe goal of this paper is to investigate the effects of film thickness and the presence of a passivation layer on the mechanical behavior of electroplated Cu thin films. In order to study the effect of passivating layers, freestanding Cu membranes were prepared using standard silicon micromachining techniques. Some of these Cu membranes were passivated by sputter depositing thin Ti films with thicknesses ranging from 20 nm to 50 nm on both sides of the membrane. The effect of film thickness was evaluated by preparing freestanding films with varying thickness but constant microstructure. To that effect, coatings of a given thickness were first vacuum annealed at elevated temperature to stabilize the microstructure. The annealed films were subsequently thinned to various thicknesses by means of chemical mechanical planarization (CMP) and freestanding membranes were prepared both with and without Ti passivation. The stress-strain curves of the freestanding Cu films were evaluated using the bulge test technique. The residual stress and elastic modulus of the film are not affected significantly by the passivation layer. The elastic modulus does not change with film thickness if the microstructure keeps constant. The yield stress increases if the film is passivated. For passivated films, yield stress is proportional to the inverse of the film thickness, which is consistent with the formation of a boundary layer of high dislocation density near the interfaces.


2021 ◽  
Vol 724 ◽  
pp. 138598
Author(s):  
Linda AISSANI ◽  
Akram ALHUSSEIN ◽  
Abdelhak AYAD ◽  
Corinne NOUVEAU ◽  
Elia ZGHEIB ◽  
...  

2004 ◽  
Author(s):  
Zhenyu Yuan ◽  
Xiulan Cheng ◽  
Dong Xu ◽  
Zhican Ye ◽  
YaFei Zhang ◽  
...  

2007 ◽  
Author(s):  
T. Bannuru ◽  
S. Narksitipan ◽  
W. L. Brown ◽  
R. P. Vinci

2010 ◽  
Vol 50 (9-11) ◽  
pp. 1888-1893 ◽  
Author(s):  
H. Youssef ◽  
A. Ferrand ◽  
P. Calmon ◽  
P. Pons ◽  
R. Plana

1999 ◽  
Author(s):  
Li Li ◽  
Biao Huang ◽  
Q. Qiao ◽  
M. H. Gordon ◽  
W. F. Schmidt ◽  
...  

Abstract We describe a technique to determine the mechanical behavior and electrical performance of thin films. Thin films (2 μm) are deflected with a probe, and the displacement of the thin films and total electrical resistance are recorded. Nonlinear finite element models (ANSYS) are used to predict the corresponding force and stress. Three microstructures are built and tested: cantilever (80 μm long and 100 μm wide), bridge (290 μm long and 50 μm wide), and cross (320 μm long and 30 μm wide). No failures are observed at 15 μm deflection for all three structures, and a yield strength at least 1.34 GPa (4–20 times larger than the reported bulk value, but consistent with thin film theory) is inferred. The measured total resistance for every device ranges from open to 0.2 Ω. A direct correlation between the measured resistance and numerically predicted force (or contact pressure since the same probe tip is used in all tests) is noted, validating the numerical predictions. The bridge and cross designs appear feasible as a burn-in test socket, and we predict a mating force of 80–350 N for a 25 mm square chip with 10,000 solder balls on 250 μm spacing. This force will depend on the acceptable range of resistances as measured by our system.


1988 ◽  
pp. 291-298
Author(s):  
F.R. BROTZEN ◽  
C.T. ROSENMAYER ◽  
R.J. GALE

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