A Technique for Determining the Mechanical Behavior and Electrical Performance of Thin Films

1999 ◽  
Author(s):  
Li Li ◽  
Biao Huang ◽  
Q. Qiao ◽  
M. H. Gordon ◽  
W. F. Schmidt ◽  
...  

Abstract We describe a technique to determine the mechanical behavior and electrical performance of thin films. Thin films (2 μm) are deflected with a probe, and the displacement of the thin films and total electrical resistance are recorded. Nonlinear finite element models (ANSYS) are used to predict the corresponding force and stress. Three microstructures are built and tested: cantilever (80 μm long and 100 μm wide), bridge (290 μm long and 50 μm wide), and cross (320 μm long and 30 μm wide). No failures are observed at 15 μm deflection for all three structures, and a yield strength at least 1.34 GPa (4–20 times larger than the reported bulk value, but consistent with thin film theory) is inferred. The measured total resistance for every device ranges from open to 0.2 Ω. A direct correlation between the measured resistance and numerically predicted force (or contact pressure since the same probe tip is used in all tests) is noted, validating the numerical predictions. The bridge and cross designs appear feasible as a burn-in test socket, and we predict a mating force of 80–350 N for a 25 mm square chip with 10,000 solder balls on 250 μm spacing. This force will depend on the acceptable range of resistances as measured by our system.

2020 ◽  
pp. 136943322098166
Author(s):  
Shuhao Yin ◽  
Bin Rong ◽  
Lei Wang ◽  
Yiliang Sun ◽  
Wuchen Zhang ◽  
...  

This paper studies the shear performance of the connection with the external stiffening ring between the square steel tubular column and unequal-depth steel beams. Two specimens of interior column connections were tested under low cyclic loading. The deformation characteristics and failure modes exhibited by the test phenomena can be summarized as: (1) two specimens all exhibited shear deformation in steel tube web of the panel zone and (2) weld fracture in the panel zone and plastic hinge failure at beam end were observed. Besides, load-displacement behaviors and strain distributions have been also discussed. The nonlinear finite element models were developed to verify the test results. Comparative analyses of the bearing capacity, failure mode, and load-paths between the equal-depth and unequal-depth beam models have been carried out.


2021 ◽  
Vol 724 ◽  
pp. 138598
Author(s):  
Linda AISSANI ◽  
Akram ALHUSSEIN ◽  
Abdelhak AYAD ◽  
Corinne NOUVEAU ◽  
Elia ZGHEIB ◽  
...  

2013 ◽  
Vol 341 ◽  
pp. 181-210 ◽  
Author(s):  
S.K. Tripathi

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.


2004 ◽  
Author(s):  
Zhenyu Yuan ◽  
Xiulan Cheng ◽  
Dong Xu ◽  
Zhican Ye ◽  
YaFei Zhang ◽  
...  

2018 ◽  
Vol 53 (11) ◽  
pp. 1507-1519 ◽  
Author(s):  
Ananth Virakthi ◽  
Soonwook Kwon ◽  
Sung W Lee ◽  
Mark E Robeson

The delamination resistance of Z-pinned laminates is directly dependent on the strength of the pin–laminate bonding at the interface. In this paper, we investigate novel approaches to the Z-pinning technology in order to increase delamination strength via enhancing mechanical interlocking of the pins. Toward this end, we study the effect of pin insertion at an angle to the vertical in contrast to the conventional vertical pin insertion. Subsequently, a novel variety of pin, namely the threaded pin, is studied as a candidate for reinforcement which increases mechanical interlocking between the pin and the laminate as well as the epoxy-pin contact area, thus delaying delamination. In addition, the effect of anchoring reveals the length of smooth metal pins on to the surface of the laminate before curing on delamination strength is investigated. Experiments performed show increase in tensile pullout strengths when angled, threaded, or anchored pins are used. These experimental results for tensile pullout strengths validate nonlinear finite element models incorporating cohesive zones at the pin–laminate interface. In addition, fracture toughness and delamination resistance under mode-I loading are investigated by performing experiments on double cantilever beam specimens. Results demonstrate the superior delamination resistance properties for angled, threaded, and anchored pin inserts.


2007 ◽  
Author(s):  
T. Bannuru ◽  
S. Narksitipan ◽  
W. L. Brown ◽  
R. P. Vinci

1996 ◽  
Vol 443 ◽  
Author(s):  
Neil H. Hendricks

AbstractFor over two years, intensive efforts at SEMATECH and elsewhere have focused on identifying low dielectric constant (low ε) materials which possess all of the required properties and processing characteristics needed for integration into standard IC fabrication lines. To date, no material candidate has been shown to satisfy this impressive list of requirements. For some candidates, drawbacks related to material properties such as poor thermal stability or electrical performance have been identified; in other cases, problems in process integration, for example difficulties in patterning have stalled progress.In this paper, most of the current leading candidates for the low ε IC IMC application are identified and discussed. An attempt is made to correlate structure/property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application. Key differences in chemistry and property/processing characteristics are contrasted for low c silicon-oxygen polymers and for purely organic polymers. Novel dielectrics such as porous organic and inorganic thin films are also discussed in terms of their properties and associated process integration challenges. Since the needs for global planarization and low c IMD are occurring within roughly the same generation of minimum feature size (˜ 0.25 μm), the chemical mechanical polishing (CMP) of low dielectric constant thin films and/or of SiO2 layers deposited above them is briefly discussed. Both subtractive metalization and damascene processes are included, and the required low dielectric constant film properties and processing characteristics are contrasted for each process. Finally, the author's views on future trends in low dielectric constant materials development are presented, with an emphasis on identifying the types of chemical structures which may prove viable for this most demanding of all polymer film applications.


Author(s):  
Naveen Viswanatha ◽  
Mark Avis ◽  
Moji Moatamedi

The surround and the spider of the loudspeaker suspension are modelled in ANSYS to carry out finite element analysis. The displacement dependent nonlinearities arising from the suspension are studied and the material and geometric effects leading to the nonlinearities are parameterised. The ANSYS models are simulated to be excited by a sinusoidal load and the results are evaluated by comparison with the results obtained by a physical model. The paper illustrates how practical models can be analysed using cost effective finite element models and also the extension of the models to experiment on various parameters, like changing the geometry for optimisation, by computer simulation.


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