Dynamic Creep in Sintered Silicon Nitride Ceramics at Elevated Temperature.

1999 ◽  
Vol 65 (631) ◽  
pp. 605-613
Author(s):  
Kenichi OSHITA ◽  
Kenji HATANAKA
1996 ◽  
Vol 430 ◽  
Author(s):  
M. E. Brito ◽  
K. Hirao ◽  
M. Toriyama ◽  
M. Hirota

AbstractPreliminary results on microwave sintering of seeded silicon nitride show that a well defined bi-modal grain size distribution is attainable in Si3N4-Y2O3-Al2O 3-MgO sintered bodies by microwave sintering at 28 GHz of materials seeded with ß-Si3N4 particles (2 vol. %). A positive effect on the mechanical performance is anticipated for these microstructurally controlled silicon nitride ceramics


2007 ◽  
Vol 554 ◽  
pp. 107-112 ◽  
Author(s):  
V. Demir ◽  
Derek P. Thompson

Silicon nitride samples were pressureless sintered with up to 5 w/o MgO to give densities in the range 98-99% of theoretical. After pressureless sintering, selected samples were placed in a vacuum heat treatment furnace surrounded by a carbon bed in a carbon crucible at a pressure of less than 4x10-4 mbar, and vacuum heat treated at different temperatures and times to remove grainboundary glass. The results showed that this was substantially achieved at 1575oC for 3h and that increasing the time to 5 hours gave still further improvement. SEM images, EDX analysis and oxidation tests provided additional evidence for the removal of Mg from the samples.


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