Selective area deposition of metal thin films on ceramic substrates by laser-induced plating.

1989 ◽  
Vol 55 (515) ◽  
pp. 1790-1795 ◽  
Author(s):  
Noboru MORITA ◽  
Takehiro WATANABE ◽  
Yoshitaro YOSHIDA
Keyword(s):  
Thin Films ◽  
Ceramic Substrates ◽  
Metal Thin Films ◽  
Selective Area ◽  
Area Deposition

Laser-Induced Selective Copper Deposition on Polyimides and Semiconductors

1992 ◽  
Vol 282 ◽  
Author(s):  
Seong-Don Hwang ◽  
S. S. Kher ◽  
J. T. Spencer ◽  
P. A. Dowben
Keyword(s):  
Gas Phase ◽  
Copper Chloride ◽  
Copper Deposition ◽  
Copper Films ◽  
Liquid Phase Deposition ◽  
Metal Thin Films ◽  
Selective Area ◽  
Phase Cluster ◽  
Photolytic Decomposition ◽  
Area Deposition

ABSTRACTIt has been demonstrated that copper can be selectively deposited on a variety of substrates including Teflon (polytetrafluroethylene or PTFE), Kapton (polyimide resin), silicon and gallium arsnide from solution by photo-assisted initiated deposition. A copper containing solution was prepared from a mixture of copper(I) chloride (Cu2Ci2) and decaborane (B10H14) in diethyl ether and/or THF (tetrahydrofuran). The copper films were fabricated by ultraviolet photolytic decomposition of copper chloride and polyhedral borane clusters. This liquid phase deposition has a gas-phase cluster analog that also results in copper deposition via pyrolysis. The approach of depositing metal thin films selectively by pholysis from solution is a novel and an underutilized approach to selective area deposition.

Selective area deposition of diamond thin films on patterns of porous silicon by hot‐filament chemical vapor deposition

1995 ◽  
Vol 67 (24) ◽  
pp. 3557-3559 ◽  
Author(s):  
S. Mirzakuchaki ◽  
M. Hajsaid ◽  
H. Golestanian ◽  
R. Roychoudhury ◽  
E. J. Charlson ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Area ◽  
Diamond Thin Films ◽  
Hot Filament ◽  
Area Deposition

Selective Area Laser Induced Deposition of Metal Boride Thin Films

1999 ◽  
Vol 558 ◽  
Author(s):  
Z.C. Zhong ◽  
V. Holmes ◽  
P.A. Dowben ◽  
D.J. Sellmyer
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Chemical Vapor ◽  
Electrolytic Deposition ◽  
Solution Deposition ◽  
Selective Area ◽  
Rare Earth Chloride ◽  
Polycrystalline Thin Films ◽  
Area Deposition ◽  
Selection Of

ABSTRACTWe have developed a novel technique for the selective area deposition of rare earth hexaborides: laser-induced solution deposition (LISD). This technique is both simple and efficient and combines many advantages of both chemical vapor deposition and electrolytic deposition. The results of LISD deposition show that the polycrystalline thin films of rare earth hexaborides and sub-borides such as MB6, MB4, and MB2 (M = Gd, La) are formed through the light initiated chemical reaction of nido-decaborane (B10H14) and rare earth chloride in solution. These films grow with a strong texture growth axis and morphology that is dependent both on the selection of solvents and laser wavelengths and power used in LISD.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Laser-Direct Patterning of Nanostructured Metal Thin Films

2010 ◽  
Vol 48 (2) ◽  
pp. 163-168 ◽  
Author(s):  
Hyunkwon Shin ◽  
Hyeongjae Lee ◽  
Hyeongjae Yoo ◽  
Ki-Soo Lim ◽  
Myeongkyu Lee
Keyword(s):  
Thin Films ◽  
Metal Thin Films ◽  
Direct Patterning ◽  
Nanostructured Metal

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

scholarly journals Nanoscale Transition Metal Thin Films: Growth Characteristics and Scaling Law for Interlayer Formation

2019 ◽  
Vol 11 (49) ◽  
pp. 46311-46326 ◽  
Author(s):  
Anirudhan Chandrasekaran ◽  
Robbert W. E. van de Kruijs ◽  
Jacobus M. Sturm ◽  
Andrey A. Zameshin ◽  
Fred Bijkerk
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Scaling Law ◽  
Growth Characteristics ◽  
Metal Thin Films

Fabrication of nanoporous noble metal thin films by O 2 plasma dealloying

2017 ◽  
Vol 631 ◽  
pp. 147-151 ◽  
Author(s):  
Geun-Hyuk Lee ◽  
Sehoon An ◽  
Seong Woo Jang ◽  
Sehoon Hwang ◽  
Sang Ho Lim ◽  
...  
Keyword(s):  
Thin Films ◽  
Noble Metal ◽  
Metal Thin Films

Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Dreifus ◽  
Y. Lansari ◽  
J.W. Han ◽  
S. Hwang ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Epitaxial Films ◽  
Semiconductor Surface ◽  
Epitaxial Layers ◽  
Double Crystal ◽  
Surface Areas ◽  
Selective Area ◽  
Lift Off ◽  
P Type ◽  
Area Deposition

ABSTRACTII-VI semiconductor surface passivants, insulators, and epitaxial films have been deposited onto selective surface areas by employing a new masking and lift-off technique. The II-VI layers were grown by either conventional or photoassisted molecular beam epitaxy (MBE). CdTe has been selectively deposited onto HgCdTe epitaxial layers as a surface passivant. Selective-area deposition of ZnS has been used in metal-insulator-semiconductor (MIS) structures. Low resistance ohmic contacts to p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a thermal evaporation of In. Epitaxial layers of HgTe, HgCdTe, and HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and double-crystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds.

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