Laser-Induced Selective Copper Deposition on Polyimides and Semiconductors

ABSTRACTIt has been demonstrated that copper can be selectively deposited on a variety of substrates including Teflon (polytetrafluroethylene or PTFE), Kapton (polyimide resin), silicon and gallium arsnide from solution by photo-assisted initiated deposition. A copper containing solution was prepared from a mixture of copper(I) chloride (Cu2Ci2) and decaborane (B10H14) in diethyl ether and/or THF (tetrahydrofuran). The copper films were fabricated by ultraviolet photolytic decomposition of copper chloride and polyhedral borane clusters. This liquid phase deposition has a gas-phase cluster analog that also results in copper deposition via pyrolysis. The approach of depositing metal thin films selectively by pholysis from solution is a novel and an underutilized approach to selective area deposition.

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Predictive Surface Kinetic Analysis: The Case of TiSi2 CVD

MRS Proceedings ◽

10.1557/proc-334-63 ◽

1993 ◽

Vol 334 ◽

Author(s):

M. A. Mendicino ◽

R. P. Southwell ◽

E. G. Seebauer

Keyword(s):

Gas Phase ◽

Film Growth ◽

Growth Conditions ◽

Si Substrate ◽

Quantitative Correlation ◽

Selective Area ◽

Metal Silicides ◽

High Production ◽

Reaction Stoichiometry ◽

Area Deposition

Recently, TiSi2 has been the object of considerable study because of its low resistivity among the transition metal silicides and its compatibility with existing ULSI technology [1,2]. Film growth by CVD offers the potential for selective area deposition and high production throughput. However, selective CVD of TiSi2 from gas phase SiH4 and TiCl4 is usually accompanied by a competing reaction which consumes intolerable amounts of the Si substrate [3,4]. Controlling this consumption is crucial in TiSi2 growth; however, no quantitative correlation exists between silicon consumption and growth conditions or film thickness. Additionally, the reaction mechanism for TiSi2 growth is poorly understood, and some disagreement even exists about the reaction stoichiometry [5,6]. The combined CVD/UHV approach we have developed fills many gaps in the current understanding of TiSi2 CVD.

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Selective area deposition of metal thin films on ceramic substrates by laser-induced plating.

TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series C ◽

10.1299/kikaic.55.1790 ◽

1989 ◽

Vol 55 (515) ◽

pp. 1790-1795 ◽

Cited By ~ 1

Author(s):

Noboru MORITA ◽

Takehiro WATANABE ◽

Yoshitaro YOSHIDA

Keyword(s):

Thin Films ◽

Ceramic Substrates ◽

Metal Thin Films ◽

Selective Area ◽

Area Deposition

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Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors

MRS Proceedings ◽

10.1557/proc-161-159 ◽

1989 ◽

Vol 161 ◽

Author(s):

D.L. Dreifus ◽

Y. Lansari ◽

J.W. Han ◽

S. Hwang ◽

J.W. Cook ◽

...

Keyword(s):

Ohmic Contacts ◽

Epitaxial Films ◽

Semiconductor Surface ◽

Epitaxial Layers ◽

Double Crystal ◽

Surface Areas ◽

Selective Area ◽

Lift Off ◽

P Type ◽

Area Deposition

ABSTRACTII-VI semiconductor surface passivants, insulators, and epitaxial films have been deposited onto selective surface areas by employing a new masking and lift-off technique. The II-VI layers were grown by either conventional or photoassisted molecular beam epitaxy (MBE). CdTe has been selectively deposited onto HgCdTe epitaxial layers as a surface passivant. Selective-area deposition of ZnS has been used in metal-insulator-semiconductor (MIS) structures. Low resistance ohmic contacts to p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a thermal evaporation of In. Epitaxial layers of HgTe, HgCdTe, and HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and double-crystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds.

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Thermochemical stabilities of the gas-phase cluster ions H3C+(N2)n

International Journal of Mass Spectrometry ◽

10.1016/s1387-3806(03)00097-6 ◽

2003 ◽

Vol 227 (3) ◽

pp. 391-399 ◽

Cited By ~ 2

Author(s):

Kenzo Hiraoka ◽

Kiyotoshi Takao ◽

Fumiyuki Nakagawa ◽

Tomoyuki Iino ◽

Masayumi Ishida ◽

...

Keyword(s):

Gas Phase ◽

Cluster Ions ◽

Phase Cluster

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Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers

Crystal Growth & Design ◽

10.1021/acs.cgd.8b01260 ◽

2019 ◽

Vol 19 (2) ◽

pp. 672-677 ◽

Cited By ~ 5

Author(s):

Raju Ahmed ◽

Anwar Siddique ◽

Jonathan Anderson ◽

Chris Engdahl ◽

Mark Holtz ◽

...

Keyword(s):

Cvd Diamond ◽

Selective Area ◽

Hot Filament Cvd ◽

Hot Filament ◽

Area Deposition

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Uv Absorption Spectra and Photolysis of Some Group II and Group VI Alkyls

MRS Proceedings ◽

10.1557/proc-29-253 ◽

1983 ◽

Vol 29 ◽

Cited By ~ 5

Author(s):

S. J. C. Irvine ◽

J. B. Mullin ◽

D. J. Robbins ◽

J. L. Glasper

Keyword(s):

Absorption Spectra ◽

Uv Absorption ◽

Xenon Lamp ◽

Group Vi ◽

Cadmium Mercury Telluride ◽

Mercury Telluride ◽

Uv Absorption Spectra ◽

Selective Area ◽

Metal Organic ◽

Area Deposition

ABSTRACTA preliminary study has been made of the UV photolysis of metal-organic compounds of Hg, Cd and Te which could be used for low-temperature, selective-area deposition of cadmium mercury telluride (CMT). High-resolution UV absorption spectra have been measured for dimethylcadmium (CdMe2), dimethylmercury (HgMe2) and diethyltelluride (TeEt2). Possible modes for photodissociation are discussed in the light of these results. The photodissociation of these alkyls was attempted in a hydrogen stream at atmospheric pressure using a mercury-xenon lamp, deposition being being onto a silica reaction tube. Yields of Cd, Hg and Te were measured under different deposition conditions to determine the dependence on UV intensity, alkyl concentration and flow velocity.

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Surface and Reactor Effects on Selective Copper Deposition from Cu(hfac)tmvs

MRS Proceedings ◽

10.1557/proc-282-347 ◽

1992 ◽

Vol 282 ◽

Cited By ~ 7

Author(s):

John A. T. Norman ◽

David A. Roberts ◽

Arthur K. Hochberg

Keyword(s):

Copper Deposition ◽

Copper Films ◽

Selective Deposition ◽

Liquid Precursor ◽

Volatile Liquid

ABSTRACTThe selectivity of OMCVD copper films grown at 160°C/500 mTorr from the volatile liquid precursor Cu(hfac)tmvs was evaluated for various commercial 6” wafers patterned with either TiN/SiO2 or TiN/Si3N4. By processing wafers “as received”, only thermal grown SiO2 consistently resisted metallization, allowing copper films up to 1.5μ thick to be grown on TiN. For SiO2, films containing H2O, especially from PECVD, only blanket deposition was observed. However, by a utilizing simple thermal predeposition dehydration some of these SiO2 films were conditioned to give selective deposition.

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Microstuctural Evolution and Substrate Selectivity in Pecvd μc-Si

MRS Proceedings ◽

10.1557/proc-283-495 ◽

1992 ◽

Vol 283 ◽

Cited By ~ 2

Author(s):

Gregory N. Parsons ◽

John J. Boland ◽

James C. Tsang

Keyword(s):

Hydrogen Plasma ◽

Chemical Vapor ◽

Process Conditions ◽

Microcrystalline Silicon ◽

Selective Area ◽

Initial Nucleation ◽

Bond Strain ◽

Manufacturing Applications ◽

Kinetics Of ◽

Area Deposition

ABSTRACTWe discuss a process for selective area deposition of microcrystalline silicon (μc-Si) using plasma enhanced chemical vapor deposition at low substrate temperature (<300°C) using time modulated silane flow in a hydrogen plasma. We discuss selectivity and deposition rate on a variety of substrates with process conditions important for manufacturing applications, and show a distinct microstructural evolution in the initial nucleation layers using Raman spectroscopy that correlates with the transition from selective to non-selective growth. Atomic hydrogen discriminates between different degrees of bond strain in the nucleii formed on different substrates, and can increase the crystallinity fraction in films deposited at low temperatures by modifying the kinetics of bulk-like bond formation.

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