Preparation of ZnO film on p-Si Substrate by Silar and Heterojunction Characteristics of p-Si/n-Zno
2011 ◽
Vol 8
(1)
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pp. 197-200
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Zinc oxide (ZnO) thin films was deposited on p-silicon (Si) substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Structural characterization by X-ray diffraction (XRD) indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio at room temperature was ~15 at 3.0 V. It increases to ~30 at 100oC.
2012 ◽
Vol 29
(1)
◽
pp. 50
2014 ◽
Vol 608
◽
pp. 127-131
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2016 ◽
Vol 06
(03)
◽
pp. 1650023
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