Current–voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs

2013 ◽  
Vol 52 (27) ◽  
pp. 6669 ◽  
Author(s):  
Kaikai Xu
Keyword(s):  
Quantum Efficiency ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Silicon Leds

Neodymium-doped GaAs Light-emitting Diodes

1996 ◽  
Vol 422 ◽  
Author(s):  
S. J. Chang
Keyword(s):  
Quantum Efficiency ◽  
Breakdown Voltage ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Minority Carriers

Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into a GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+4F3/2 state to the Nd3+4I9/2, 4I1/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5 × 10−7.

scholarly journals Светодиод на основе AlInGaN-гетероструктур, выращенных на подложках SiC/Si и технология его изготовления

2021 ◽  
Vol 47 (18) ◽  
pp. 3
Author(s):  
Л.К. Марков ◽  
С.А. Кукушкин ◽  
И.П. Смирнова ◽  
А.С. Павлюченко ◽  
А.С. Гращенко ◽  
...  
Keyword(s):  
Output Power ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Luminescence Spectra ◽  
Si Substrate ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Atomic Substitution

The technique and technology for fabricating both LED chips and packaged LEDs based on InGaN/GaN heterostructures grown on novel SiC/Si substrates synthesized by the method of matched atomic substitution have been described. The current-voltage characteristics, luminescence spectra, and the current dependences of output power and external quantum efficiency have been studied. It is shown that the presence of pores naturally formed in the SiC/Si substrate during its growth leads to a substantial increase in the quantum efficiency of LEDs in comparison with that of LEDs fabricated on silicon without a SiC sublayer.

Performance InGaN and AlGaInP LED Characteristic Dependence on Quantum Wells

2014 ◽  
Vol 1070-1072 ◽  
pp. 600-603 ◽  
Author(s):  
Oleg Rabinovich ◽  
Sergey Didenko ◽  
Sergey Legotin
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Spectral Characteristics ◽  
Optimal Structure ◽  
Inhomogeneous Distribution ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

The simulation of multicomponent nanoheterostructures (MNH) InGaN for light-emitting diodes (LEDs) was made. The results are presented in graphs, for example, the current-voltage characteristics, the dependence of the internal quantum efficiency (IQE) on the number of quantum wells (QW) and spectral characteristics. The optimal structure of the MNH and the influence of the inhomogeneous distribution of In atoms in the quantum-well region is investigated.

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