scholarly journals Светодиод на основе AlInGaN-гетероструктур, выращенных на подложках SiC/Si и технология его изготовления

2021 ◽  
Vol 47 (18) ◽  
pp. 3
Author(s):  
Л.К. Марков ◽  
С.А. Кукушкин ◽  
И.П. Смирнова ◽  
А.С. Павлюченко ◽  
А.С. Гращенко ◽  
...  
Keyword(s):  
Output Power ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Luminescence Spectra ◽  
Si Substrate ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Atomic Substitution

The technique and technology for fabricating both LED chips and packaged LEDs based on InGaN/GaN heterostructures grown on novel SiC/Si substrates synthesized by the method of matched atomic substitution have been described. The current-voltage characteristics, luminescence spectra, and the current dependences of output power and external quantum efficiency have been studied. It is shown that the presence of pores naturally formed in the SiC/Si substrate during its growth leads to a substantial increase in the quantum efficiency of LEDs in comparison with that of LEDs fabricated on silicon without a SiC sublayer.

Neodymium-doped GaAs Light-emitting Diodes

1996 ◽  
Vol 422 ◽  
Author(s):  
S. J. Chang
Keyword(s):  
Quantum Efficiency ◽  
Breakdown Voltage ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Minority Carriers

Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into a GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+4F3/2 state to the Nd3+4I9/2, 4I1/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5 × 10−7.

Simulation and modeling of the influence of temperature on CdS/CdTe thin film solar cell

2019 ◽  
Vol 87 (3) ◽  
pp. 30101 ◽  
Author(s):  
Abdel-baset H. Mekky
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Influence Of Temperature ◽  
Cdte Solar Cell ◽  
Cell Parameters ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Influence Of Temperature On

Semiconductor materials cadmium sulfide (CdS) and cadmium telluride (CdTe) are employed in the fabrication of thin film solar cells of relatively excessive power conversion efficiency and low producing price. Simulations of thin film CdS/CdTe solar cell were carried out using SCAPS-1D. The influence of temperature field on the variation of CdTe solar cell parameters such as current–voltage, capacitance–voltage characteristics and the external quantum efficiency was investigated theoretically. For use temperatures, one obtains the external quantum efficiency has the same profiles. However, the effect of the temperature on the Mott-Schottky curves is slightly noted by variations on the characteristics. This conclusion can be used by solar cell manufacturers to improve the solar cell parameters with the biggest possible gain in device performance.

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 114-117
Author(s):  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm , respectively.

Large Remanent Polarization of Pm2O3-Doped Bi4Ti3O12 Films

2013 ◽  
Vol 591 ◽  
pp. 104-107
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Remanent Polarization ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics

Pm-doped bismuth titanate (Pm4-xLaxTi3O12: BPT) and pure Bi4Ti3O12(BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25, 1.0, and 1.25, the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75, the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Fims with x=0.75 were above 40μC/cm2 and 60KV/cm , respectively.

Study of the Effect of Metal/Semiconductor Interface Properties on a Resistance Switching Device

2007 ◽  
Vol 997 ◽  
Author(s):  
Manuel Villafuerte ◽  
Silvia P. Heluani ◽  
Gabriel Juárez ◽  
David Comedi ◽  
Gabriel Braunstein ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Electrical Contacts ◽  
X Ray Diffraction ◽  
Semiconductor Interface ◽  
Si Substrates ◽  
Barrier Heights ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Terminal Structure ◽  
Gap States

AbstractN-doped ZnO thin films were deposited by pulsed laser deposition on SiO2/Si substrates. X-ray diffraction analysis revealed that the films had the wurtzite structure, and were highly oriented along the c-axis direction. Au and Al electrical contacts were deposited by sputtering on the top surface of the samples, forming a two-terminal structure in each case. The current-voltage characteristics of the two terminal structure, and the temperature dependence of the resistance switching effect, were studied in the 125-300 K temperature range. The results of these measurements are presented and discussed in terms of the different Schottky barrier heights, as well as in terms of interfacial defect-induced gap states.

A novel n+-polysilicon on n-silicon iso-type diode

1996 ◽  
Vol 74 (S1) ◽  
pp. 186-188
Author(s):  
S. Mohajerzadeh ◽  
C. R. Selvakumar
Keyword(s):  
Energy Barrier ◽  
Exponential Behavior ◽  
Si Substrates ◽  
Current Voltage ◽  
Polysilicon Films ◽  
Current Voltage Characteristics ◽  
Film Substrate ◽  
Phosphorus Doped

We report the results of fabricating n+-n iso-type diodes using in-situ phosphorus–doped polysilicon films on n-type 1 Ω cm <100> Si substrates. The electrical characteristics of this structure give evidence of the presence of an energy barrier at the film–substrate interface reminiscent of Schottky-barrier diodes. The current–voltage characteristics show exponential behavior over three decades of current. An ideality factor of 1.2 is extracted from the experimental results. An energy barrier height of about 0.2 eV is obtained from the current–temperature analysis.

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