Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films

Neutron powder diffraction has been carried out on a congruent LiNbO 3 sample containing 7 Li isotope ( C 7 LN ) and a near stoichiometric Mg doped LiNbO 3 sample ( Mg : NSLN ) in the temperature range of 4 K and 90 K. Large anisotropic displacement parameters (ADPs) of the Li ions have shown evidence of large disorder along the c-axis for both samples. The results have shown no evidence for the existence of anomalous structural behavior for both samples at low temperatures, although abnormal structural features at 55 K and 100 K for a LiNbO 3 crystal having different Li content as the samples used in the present studies have been observed by Fernandez-Ruiz et al. [Phys. Rev. B72 (2005) 184108].

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All low-temperature processed carbon-based planar heterojunction perovskite solar cells employing Mg-doped rutile TiO2 as electron transport layer

Electrochimica Acta ◽

10.1016/j.electacta.2018.07.044 ◽

2018 ◽

Vol 283 ◽

pp. 1115-1124 ◽

Cited By ~ 27

Author(s):

Xingyue Liu ◽

Zhiyong Liu ◽

Bo Sun ◽

Xianhua Tan ◽

Haibo Ye ◽

...

Keyword(s):

Solar Cells ◽

Electron Transport ◽

Low Temperature ◽

Perovskite Solar Cells ◽

Transport Layer ◽

Electron Transport Layer ◽

Rutile Tio2 ◽

Planar Heterojunction ◽

Mg Doped ◽

Carbon Based

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Dielectric Properties of Mg-Doped Ba0.6Sr0.4TiO3Ceramic Sintered at a Low Temperature with Li2O Additve

Ferroelectrics ◽

10.1080/00150190701508845 ◽

2007 ◽

Vol 356 (1) ◽

pp. 13-18 ◽

Cited By ~ 6

Author(s):

Xiujian Chou ◽

Jiwei Zhai ◽

Jianying Sun ◽

Xi Yao

Keyword(s):

Dielectric Properties ◽

Low Temperature ◽

Mg Doped

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Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.07.038 ◽

2010 ◽

Vol 312 (21) ◽

pp. 3131-3135 ◽

Cited By ~ 21

Author(s):

Daisuke Iida ◽

Kenta Tamura ◽

Motoaki Iwaya ◽

Satoshi Kamiyama ◽

Hiroshi Amano ◽

...

Keyword(s):

Vapor Phase ◽

Compensation Effect ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Mg Doped

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Growth and Characterizations of Mg-doped GaAs Films

10.1149/osf.io/q5ksp ◽

2020 ◽

Author(s):

Dong Fong

Keyword(s):

Atomic Force Microscopy ◽

Low Temperature ◽

Surface Morphology ◽

Force Microscopy ◽

Atomic Force ◽

Gaas Films ◽

Growth Method ◽

P Type ◽

Low Temperature Photoluminescence ◽

Mg Doped

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

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Low-temperature Chemical Vapor Deposition of Rhodium and Iridium thin Films

MRS Proceedings ◽

10.1557/proc-168-369 ◽

1989 ◽

Vol 168 ◽

Cited By ~ 9

Author(s):

David C. Smith ◽

Steve G. Pattillo ◽

Norman E. Elliott ◽

Thomas G. Zocco ◽

Carol J. Burns ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Films ◽

Residual Carbon ◽

Carbon 14 ◽

Metal Composition ◽

Vacuum Thermal Deposition ◽

Crystalline Metal

AbstractLow-temperature chemical vapor deposition of M(allyl)3 (M = Rh, Ir; allyl = η3 -C3H5) in the presence of H• yields thin, crystalline metal films of greater than 97% metal composition. Depositions using H2 result in the formation of materials which are amorphous and contain a significant amount of residual carbon (14%). The composition of these materials does not differ significantly from that obtained from the vacuum thermal deposition of M(allyl)3.

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