X-ray photoelectron spectroscopy analyses of the surface and interface of Pd-based p-GaP ohmic contact layer

1994 ◽  
Vol 25 (1) ◽  
pp. 24-28 ◽  
Author(s):  
Fujia Zhang ◽  
Baojun Li ◽  
Baosheng Sang
Keyword(s):  
Ohmic Contact ◽  
Photoelectron Spectroscopy ◽  
Contact Layer ◽  
X Ray ◽  
Surface And Interface

Characterization of Ti/TiN Films and SiO2/Ti Interfaces by Use of X-Ray Photoelectron Spectroscopy

1993 ◽  
Vol 318 ◽  
Author(s):  
Joffre Bernard ◽  
Ercan Adem ◽  
Seshadri Ramaswami
Keyword(s):  
Integrated Circuits ◽  
Photoelectron Spectroscopy ◽  
Ambient Air ◽  
Tin Films ◽  
X Ray ◽  
Surface And Interface ◽  
Surface Analysis Techniques ◽  
Contamination Levels ◽  
Reflective Coatings

ABSTRACTThe deposition and processing of thin films, such as barrier metals and anti-reflective coatings, can be enhanced using the information provided by various surface analysis techniques. We will show the application of x-ray photoelectron spectroscopy(XPS) to the production of Ti and TiN films suitable for use in ULSI CMOS integrated circuits. XPS can separate Ti and N photoelectron peaks and detect low (1.0-5.0 atomic%) contamination levels while providing surface and interface chemical state information. In this paper we will show that a) the effect of TiN deposition on subsequent Ti film quality from the same Ti target was determined to be minimal, b) the relation of anneal temperature to the extent of SiO2 reduction by Ti metal was characterized on SiO2/Ti/TiN structures for temperatures from 600°C to 800°C, and c) the absorption of O into TiN films from ambient air was detected and confirmed.

Photo-Chemical Changes of Aluminium Films on Silicon

1988 ◽  
Vol 119 ◽  
Author(s):  
A. J. Kellock ◽  
J. S. Williams ◽  
G. L. Nyberg ◽  
J. Liesegang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Surface Oxidation ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Chemical Changes ◽  
X Ray ◽  
Surface And Interface ◽  
Photon Irradiation

AbstractX-ray Photoelectron Spectroscopy and Rutherford Backscattering Spectroscopy with channeling are employed to study surface and interface changes resulting from irradiation of thin Al films on Si-SiO2 substrates using < 6eV visible photons. Results indicati that surface oxidation and bonding rearrangements at the Al-SiO2-Si interface can take place at room temperature under photon bombardment. These changes are correlated with enhanced adhesion and modification of film etch properties which are also a result of photon irradiation.

Multi-Technique Characterization of WSix films

1994 ◽  
Vol 337 ◽  
Author(s):  
S.M. Baumann ◽  
C.J. Hitzman ◽  
I.C. Ivanov ◽  
AY. Craig ◽  
P.M. Lindley
Keyword(s):  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Barrier Properties ◽  
Oxide Thickness ◽  
Grain Structure ◽  
Elastic Recoil ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Surface And Interface

ABSTRACTWSix films are used extensively for contact, interconnect, and, in some cases, diffusion and Schottky barriers in semiconductor devices1. The electrical and barrier properties of these films are affected by a variety of factors, such as film stoichiometry, morphology, impurities, etc. This paper will address the capabilities and limitations of a variety of techniques which are frequently used to characterize WSix films. Techniques which were studied include: Dynamic and Static Secondary Ion Mass Spectrometry (SIMS), Rutherford Backscattering Spectrometry and Elastic Recoil Detection (RBS/ERD), Auger Electron Spectroscopy (AES), Field Emission Scanning Electron Microscopy (FE-SEM), Total Reflection X-ray Fluorescence (TXRF), Atomic Force Microscopy (AFM), and X-Ray Photoelectron Spectroscopy (XPS). Film characteristics which were studied included surface morphology; grain structure; film stoichiometry; surface and interface oxide thickness and composition; and surface, bulk, and interface impurity concentrations including metallic, atmospheric, and dopant impurities. Cross correlation between the techniques was performed whenever possible in order to compare the relative accuracy of the techniques as well.

scholarly journals Quantitative Characterisation of Surface and Interface Chemistry with X-ray Photoelectron Spectroscopy (XPS)

2009 ◽  
Vol 15 (S2) ◽  
pp. 176-177
Author(s):  
TS Nunney ◽  
O Mustonen ◽  
RG White
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interface Chemistry ◽  
X Ray ◽  
Surface And Interface ◽  
Quantitative Characterisation

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Atomistic Study of Surfaces and Interfaces of Fe-Cr and Fe-Cr-Al Alloys

2013 ◽  
Vol 762 ◽  
pp. 728-733 ◽  
Author(s):  
Kalevi Kokko ◽  
Sasuma Granroth ◽  
M.H. Heinonen ◽  
R.E. Perälä ◽  
T. Kilpi ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Auger Electron ◽  
Surface Composition ◽  
Heating Time ◽  
Al Alloys ◽  
Interface Properties ◽  
X Ray ◽  
Surface And Interface ◽  
Surfaces And Interfaces ◽  
Atomistic Study

Surface and interface properties of Fe-Cr, Fe-Al, and Fe-Cr-Al are studied using Exact Muffin-Tin Orbitals and Monte Carlo methods and with x-ray photoelectron and Auger electron techniques. Surface composition is investigated as a function of oxidation (heating) time. Hard x ray photoelectron spectroscopy (HAXPES) is used to scan non destructively the compositions below the surface. It is found that Cr boosts the Al segregation to the surface.

Analysis of Zinc Compound Buffer Layers in Cu(In, Ga)(S, Se)2 Thin Film Solar Cells by Synchrotron-Based Soft X-Ray Spectroscopy

2003 ◽  
Vol 763 ◽  
Author(s):  
I. Lauermann ◽  
M. Bär ◽  
A. Ennaoui ◽  
U. Fiedeler ◽  
Ch-H. Fischer ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Thin Film Solar Cell ◽  
Emission Spectroscopy ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Interface Properties ◽  
Specific Chemical ◽  
X Ray ◽  
Surface And Interface

AbstractZinc-based buffer layers like ZnSe, ZnS, or wet-chemically deposited ZnO on Cu(In, Ga)(S, Se)2 absorber materials (CIGSSe) have yielded thin film solar cell efficiencies comparable to or even higher than standard CdS/CIGSSe cells. However, little is known about surface and interface properties of these novel buffer layers. In this contribution we characterize the specific chemical environment at the absorber/buffer-interface using X-ray Emission Spectroscopy (XES) and Photoelectron Spectroscopy (PES) in a complementary way. Evidence of intermixing and chemical reactions is found for different buffer materials and deposition methods.

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