GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

2009 ◽  
Author(s):  
E. Feltin ◽  
A. Castiglia ◽  
G. Cosendey ◽  
J.-F. Carlin ◽  
R. Butté ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Cladding Layer ◽  
Lattice Matched

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

2008 ◽  
Vol 44 (8) ◽  
pp. 521 ◽  
Author(s):  
A. Castiglia ◽  
E. Feltin ◽  
J. Dorsaz ◽  
G. Cosendey ◽  
J.-F. Carlin ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blue Laser ◽  
Cladding Layer ◽  
Lattice Matched

Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding

2011 ◽  
Vol 98 (20) ◽  
pp. 201112 ◽  
Author(s):  
R. Charash ◽  
H. Kim-Chauveau ◽  
J-M. Lamy ◽  
M. Akther ◽  
P. P. Maaskant ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Lattice Matched

Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping

2020 ◽  
Vol 13 (7) ◽  
pp. 071008
Author(s):  
Tomoya Omori ◽  
Sayaka Ishizuka ◽  
Shunya Tanaka ◽  
Shinji Yasue ◽  
Kosuke Sato ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Ultraviolet B ◽  
Cladding Layer ◽  
Internal Loss ◽  
P Type

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

2016 ◽  
Vol 108 (15) ◽  
pp. 151108 ◽  
Author(s):  
M. Martens ◽  
C. Kuhn ◽  
E. Ziffer ◽  
T. Simoneit ◽  
V. Kueller ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Current Injection ◽  
Absorption Loss ◽  
Ultraviolet Laser ◽  
Cladding Layer ◽  
Deep Ultraviolet

MBE-Grown GaNAsBi Matched to GaAs with 1.3-μm Emission Wavelength

2004 ◽  
Vol 829 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Wei Huang ◽  
Kunishige Oe
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Matching ◽  
Peak Energy ◽  
First Time ◽  
Lattice Matched

ABSTRACTGaNyAs1-x-yBix alloy lattice-matched to GaAs has been grown by molecular beam epitaxy (MBE). The lattice-matching of GaNyAs1-x-yBix to GaAs was investigated by X-ray diffraction measurements on a series of GaNyAs1-x-yBix with various GaN molar fractions. GaNyAs1-x-yBix lattice-matched to GaAs was obtained, which was confirmed by its diffraction peak overlapped with the peak of GaAs. Photoluminescence (PL) of 1.3 μm was observed from GaNyAs1-x-yBix epilayer matched to GaAs at room temperature. The temperature coefficient of the PL peak energy in a temperature range 150–300K for GaNyAs1-x-yBix was 1/3 of InGaAsP with a bandgap corresponding to 1.3-μm emission. Both lattice-matching to GaAs and bandgap adjustment to 1.3-μm waveband were achieved for GaNyAs1-x-yBix for the first time. This alloy will lead to the fabrication of laser diodes with an emission of temperature insensitive wavelength.

Al-free cladding-layer blue laser diodes with a low aspect ratio in far-field beam pattern

2018 ◽  
Vol 39 (8) ◽  
pp. 084004 ◽  
Author(s):  
Meixin Feng ◽  
Qian Sun ◽  
Jianping Liu ◽  
Zengcheng Li ◽  
Yu Zhou ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Laser Diodes ◽  
Beam Pattern ◽  
Blue Laser ◽  
Far Field ◽  
Low Aspect Ratio ◽  
Cladding Layer
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