MBE-Grown GaNAsBi Matched to GaAs with 1.3-μm Emission Wavelength

2004 ◽  
Vol 829 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Wei Huang ◽  
Kunishige Oe
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Matching ◽  
Peak Energy ◽  
First Time ◽  
Lattice Matched

ABSTRACTGaNyAs1-x-yBix alloy lattice-matched to GaAs has been grown by molecular beam epitaxy (MBE). The lattice-matching of GaNyAs1-x-yBix to GaAs was investigated by X-ray diffraction measurements on a series of GaNyAs1-x-yBix with various GaN molar fractions. GaNyAs1-x-yBix lattice-matched to GaAs was obtained, which was confirmed by its diffraction peak overlapped with the peak of GaAs. Photoluminescence (PL) of 1.3 μm was observed from GaNyAs1-x-yBix epilayer matched to GaAs at room temperature. The temperature coefficient of the PL peak energy in a temperature range 150–300K for GaNyAs1-x-yBix was 1/3 of InGaAsP with a bandgap corresponding to 1.3-μm emission. Both lattice-matching to GaAs and bandgap adjustment to 1.3-μm waveband were achieved for GaNyAs1-x-yBix for the first time. This alloy will lead to the fabrication of laser diodes with an emission of temperature insensitive wavelength.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

1999 ◽  
Vol 595 ◽  
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

AbstractWe report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

scholarly journals Physical Stability and Viscoelastic Properties of Co-Amorphous Ezetimibe/Simvastatin System

2019 ◽  
Vol 12 (1) ◽  
pp. 40 ◽  
Author(s):  
Justyna Knapik-Kowalczuk ◽  
Krzysztof Chmiel ◽  
Karolina Jurkiewicz ◽  
Natália Correia ◽  
Wiesław Sawicki ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Viscoelastic Properties ◽  
Room Temperature ◽  
Physical Stability ◽  
Ternary Systems ◽  
Storage Conditions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Conditions ◽  
First Time

The purpose of this paper is to examine the physical stability as well as viscoelastic properties of the binary amorphous ezetimibe–simvastatin system. According to our knowledge, this is the first time that such an amorphous composition is prepared and investigated. The tendency toward re-crystallization of the amorphous ezetimibe–simvastatin system, at both standard storage and elevated temperature conditions, have been studied by means of X-ray diffraction (XRD). Our investigations have revealed that simvastatin remarkably improves the physical stability of ezetimibe, despite the fact that it works as a plasticizer. Pure amorphous ezetimibe, when stored at room temperature, begins to re-crystallize after 14 days after amorphization. On the other hand, the ezetimibe-simvastatin binary mixture (at the same storage conditions) is physically stable for at least 1 year. However, the devitrification of the binary amorphous composition was observed at elevated temperature conditions (T = 373 K). Therefore, we used a third compound to hinder the re-crystallization. Finally, both the physical stability as well as viscoelastic properties of the ternary systems containing different concentrations of the latter component have been thoroughly investigated.

Temperature dependence of the AV3O7 (A = Ca, Sr) structure

2007 ◽  
Vol 63 (6) ◽  
pp. 836-842 ◽  
Author(s):  
Sebastian Prinz ◽  
Karine M. Sparta ◽  
Georg Roth
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Structures ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Space Groups ◽  
Temperature Ranges ◽  
First Time

The V4+ (spin ½) oxovanadates AV3O7 (A = Ca, Sr) were synthesized and studied by means of single-crystal X-ray diffraction. The room-temperature structures of both compounds are orthorhombic and their respective space groups are Pnma and Pmmn. The previously assumed structure of SrV3O7 has been revised and the temperature dependence of both crystal structures in the temperature ranges 297–100 K and 315–100 K, respectively, is discussed for the first time.

scholarly journals Origin of Ultraviolet Luminescence from Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy

2011 ◽  
Vol 1 ◽  
pp. 135-139 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan ◽  
I. Hussain ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Luminescence

Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zni-X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.

Optical and X-Ray Diffraction Characterization of MBE-Grown InGaAs, InAlAs and InGaAIAs on InP

1994 ◽  
Vol 340 ◽  
Author(s):  
Z. C. Feng ◽  
S. J. Chua ◽  
A. Raman ◽  
N.N. Lim
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Molecular Beam ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Lattice Matched ◽  
Comprehensive Characterization

ABSTRACTA variety of Inl-xGaxAs, Inl-yAlyAs and Inl-x-yGaxAlyAs films have been grown on InP by molecular beam epitaxy. A comprehensive characterization was performed using Raman scattering, photoluminescence (PL), Fourier transform infrared (FTIR) spectroscopy and double crystal X-ray diffraction on these ternary and quaternary heterostructures with different compositions and growth conditions. The lattice matched and mismatched structures are studied. Our analyses show that the interface mismatch exerts an important influence on the optical properties of these heterostructures, and conversely that Raman, PL and FTIR can be used to probe the interface mismatch nondestructively.

MOVPE Growth of GaPAsN Quaternary Alloys Lattice-Matched to GaP

1997 ◽  
Vol 482 ◽  
Author(s):  
Goshi Biwa ◽  
Hiroyuki Yaguchi ◽  
Kentaro Onabe ◽  
Yasuhiro Shiraki
Keyword(s):  
Quaternary Alloy ◽  
Semiconductor Films ◽  
X Ray Diffraction ◽  
Quaternary Alloys ◽  
X Ray ◽  
Lattice Matching ◽  
Movpe Growth ◽  
Superior Surface ◽  
Lattice Matched

AbstractGaP1-x-yAsyNx. (x ∼,2.3%, 0< y <19%) quaternary alloy semiconductor films on GaP substrates have been successfully grown by metalorganic vapor phase epitaxy (MOVPE). With the fixed supplies of trimethylgallium(TMG), AsH3 and dimethylhydrazine(DMHy) during the growth, the As concentration in the solid increased with increasing AsH3 supply, while the N concentration was almost unaffected. It has been demonstrated that the crystalline quality of the alloy films is much improved with the close lattice-matching to the GaP substrate, giving a superior surface morphology without any cross-hatches, a much narrower x-ray diffraction linewidth, and a significantly higher photoluminescence(PL) intensity.

Mineralogy and formation of evaporite deposits from the Lewis Cliff ice tongue, Antarctica

2014 ◽  
Vol 27 (1) ◽  
pp. 73-84 ◽  
Author(s):  
Tingting Liu ◽  
David L. Bish ◽  
Richard A. Socki ◽  
Ralph P. Harvey ◽  
Eric Tonui
Keyword(s):  
Room Temperature ◽  
Precipitation Process ◽  
Secondary Mineral ◽  
X Ray Diffraction ◽  
Sulfate Ions ◽  
X Ray ◽  
Bodies Of Water ◽  
Evaporite Minerals ◽  
Glacial Tills ◽  
First Time

AbstractThe mineralogy of evaporites from the Lewis Cliff ice tongue (LCIT), Antarctica, and their mineral stabilities and transformation behaviours under different temperature and relative humidity (RH) conditions have been evaluated to elucidate formation mechanism(s). A variety of sodium (Na)-rich evaporite minerals were documented using RH-controlled powder X-ray diffraction (XRD) methods including Na-sulfates (mirabilite and thenardite), Na-carbonate/bicarbonates (nahcolite, occasional trona and natron) and Na-borates (qilianshanite and borax). Mirabilite begins to dehydrate to thenardite, and natron to trona and natrite when exposed to room temperature, even when maintained at RH values similar to those measured at the LCIT (50–70%). The boron-mineral qilianshanite was discovered for the first time in Antarctica within the evaporite mounds. The mirabilite-rich mounds are deduced to have formed via a freezing/sublimation process that occurred in glacial or subglacial bodies of water supplied by glacial tills containing microbially oxidized sulfate ions. The needle-like nahcolite crystals growing on the exteriors of the mounds suggest a dissolution/precipitation process involving atmospheric CO2 and water. The co-existence of nahcolite and boron-bearing minerals indicates the presence of a Na+-, HCO3-- and boron-bearing alkaline brine, which produces qilianshanite as a secondary mineral by reaction of nahcolite and borax in atmospheric CO2 and H2O.

Effects on the amorphous Ga2O3 film surfaces by sub-IB-metal-nano-layers

MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 285-292
Author(s):  
L. I. Juárez-Amador ◽  
M. Galván-Arellano ◽  
Y. M. Hernández-Rodríguez ◽  
J. A. Andraca-Adame ◽  
G. Romero-Paredes ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rf Sputtering ◽  
Sem Analysis ◽  
X Ray Diffraction ◽  
Amorphous Films ◽  
X Ray ◽  
Plasmon Frequency ◽  
First Time ◽  
Amorphous Character

AbstractThis work reports by the first time a method to control the geometry of Ga2O3 films nanocrystallites at 350 °C. The formation of controlled shaped nano-crystallites of γ-Ga2O3 from amorphous Ga2O3 films grown by RF-Sputtering at room temperature driven by nano-layers of group IB metals (Cu, Ag or Au) is studied. The reported results can be explained by the role of subsurface metal nano-layers and the non-equilibrium nature of the sputtering processes. To study the effects on the surface structure and their optical properties arrays of amorphous-Ga2O3/IB-metal/amorphous-Ga2O3 were annealed in dry N2 atmosphere at 350 °C by 50, 100 and 150 min. The experimental results can be explained by the evolution of the amorphous character of the films amorphous films towards the nanocrystalline γ-Ga2O3 phase driven by the metal nano-layer seed nature. As the annealing time was increased the transition from amorphous-Ga2O3 to the nanocrystalline γ-Ga2O3 phase was detected by X-ray diffraction analysis. The transition to the nanocrystalline γ-Ga2O3 is demonstrated by the formation of octahedral, triangle and ball shape nanocrystallites with sizes of ∼5 to 50 nm according to FE-SEM analysis. The influence of the metal nano-layer is clearly seen by the shift of the plasmon frequency resonance produced by the Ga2O3/IB-metal/Ga2O3 arrays in the region from 400 to 600 nm caused by the modification of the interface Ga2O3/IB-metal produced by the applied annealing stages.

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