scholarly journals Temperature dependent optical properties of amorphous silicon for diode laser crystallization

2012 ◽  
Vol 20 (S6) ◽  
pp. A856 ◽  
Author(s):  
Joachim Bergmann ◽  
Martin Heusinger ◽  
Gudrun Andrä ◽  
Fritz Falk
Keyword(s):  
Optical Properties ◽  
Amorphous Silicon ◽  
Diode Laser ◽  
Laser Crystallization ◽  
Temperature Dependent

CW-diode laser crystallization of sputtered amorphous silicon on glass, SiNx, and SiO2 intermediate layers

2013 ◽  
Vol 48 (12) ◽  
pp. 4177-4182 ◽  
Author(s):  
G. Schmidl ◽  
G. Andrä ◽  
J. Bergmann ◽  
A. Gawlik ◽  
I. Höger ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Diode Laser ◽  
Laser Crystallization ◽  
Intermediate Layers

Sputtered amorphous silicon thin films for diode laser crystallization

2012 ◽  
Vol 67 (1) ◽  
pp. 229-232 ◽  
Author(s):  
G. Schmidl ◽  
G. Andrä ◽  
J. Bergmann ◽  
A. Gawlik ◽  
I. Höger ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Diode Laser ◽  
Laser Crystallization ◽  
Silicon Thin Films

scholarly journals Determination of the temperature-dependent optical properties of amorphous silicon films at elevated temperatures

2021 ◽  
Author(s):  
Florian Fuchs ◽  
Chrisian Vedder ◽  
Jochen Stollenwerk ◽  
Peter Loosen
Keyword(s):  
Optical Properties ◽  
Amorphous Silicon ◽  
Elevated Temperatures ◽  
Silicon Films ◽  
Temperature Dependent

scholarly journals Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova
Keyword(s):  
Optical Properties ◽  
Structural Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
Vicinal Surfaces ◽  
Temperature Dependent ◽  
Step Flow ◽  
Step Flow Growth ◽  
First Time ◽  
Temperature Dependent Photoluminescence

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

PERMITTIVITY IN PERTURBED MOLECULAR NANOFILMS

2012 ◽  
Vol 26 (15) ◽  
pp. 1250078 ◽  
Author(s):  
BRANKO MARKOSKI ◽  
JOVAN P. ŠETRAJČIĆ ◽  
MIROSLAVA PETREVSKA ◽  
SINIŠA VUČENOVIĆ
Keyword(s):  
Optical Properties ◽  
Dielectric Properties ◽  
Green's Functions ◽  
Green’S Functions ◽  
Microscopic Theory ◽  
2D Systems ◽  
Molecular Films ◽  
Temperature Dependent

A microscopic theory of dielectric properties of thin molecular films, i.e., quasi 2D systems bounded by two surfaces parallel to XY planes was formulated. Harmonic exciton states were calculated using the method of two-time, retarded, temperature dependent Green's functions. It has been shown that two types of excitations can occur: bulk and surface exciton states. Analysis of the optical properties of these crystalline systems for low exciton concentration shows that the permittivity strongly depends on boundary parameters and the thickness of the film. Conditions for the appearance of localized or unoccupied exciton states have been especially analyzed.

On the effects of thermal treatment on the composition, structure, morphology, and optical properties of hydrogenated amorphous silicon-oxycarbide

2009 ◽  
Vol 24 (8) ◽  
pp. 2561-2573 ◽  
Author(s):  
Spyros Gallis ◽  
Vasileios Nikas ◽  
Eric Eisenbraun ◽  
Mengbing Huang ◽  
Alain E. Kaloyeros
Keyword(s):  
Optical Properties ◽  
Thermal Treatment ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Effective Cross Section ◽  
Silicon Oxycarbide ◽  
Nuclear Reaction Analysis ◽  
Structure Morphology ◽  
Composition Structure ◽  
Hydrogenated Amorphous

The composition, structure, morphology, and optical characteristics of hydrogenated amorphous silicon-oxycarbide (a-SiCxOyHz) materials were investigated as a function of experimental processing conditions and post-deposition thermal treatment. Thermal chemical vapor deposition (TCVD) was applied to the growth of three different types of a-SiCxOyHz films, namely, SiC-like (SiC1.08O0.07H0.21), Si-C-O (SiC0.50O1.20H0.22), and SiO2-like (SiC0.20O1.70H0.24). The resulting films were subsequently annealed at temperatures ranging from 500 °C to 1100 °C for 1 h in an argon atmosphere. The composition, structure, and morphology of as-deposited and post-annealed films were characterized by Fourier transform infrared spectroscopy (FTIR), x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), nuclear-reaction analysis (NRA), and scanning electron microscopy. Corresponding optical properties were assessed by spectroscopic ultraviolet-visible ellipsometry (UV-VIS-SE). These studies led to the identification of an optimized process window for the growth of Er doped silicon oxycarbide (SiC0.5O1.0:Er) thin film with strong room-temperature photoluminescence emission measured around 1540 nm within a broad (460 nm to 600 nm) wavelength band. Associated modeling studies showed that the effective cross section for Er excitation in the SiC0.5O1.0:Er matrix was approximately four orders of magnitude larger than its analog for direct optical excitation of Er ions.

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

2015 ◽  
Vol 1770 ◽  
pp. 25-30 ◽  
Author(s):  
V.C. Lopes ◽  
A.J. Syllaios ◽  
D. Whitfield ◽  
K. Shrestha ◽  
C.L. Littler
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Noise Component ◽  
Variable Range ◽  
Noise Measurements ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTWe report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

Temperature-dependent optical properties of hexagonal and cubic MgxZn1 xO thin-film alloys

2004 ◽  
Vol 16 (17) ◽  
pp. 2973-2980 ◽  
Author(s):  
N B Chen ◽  
H Z Wu ◽  
D J Qiu ◽  
T N Xu ◽  
J Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Temperature Dependent
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