Characteristics of Photodiode Arrays for Spectrochemical Measurements

1976 ◽  
Vol 30 (2) ◽  
pp. 113-123 ◽  
Author(s):  
Gary Horlick
Keyword(s):  
Integrated Circuit ◽  
Image Sensor ◽  
Image Sensors ◽  
Spectral Information ◽  
Measurement Capability ◽  
Measurement Systems ◽  
Operational Characteristics ◽  
Photodiode Array ◽  
Photodiode Arrays ◽  
Element Array

A rather large number of spectrochemical studies and analyses can be greatly facilitated by the simultaneous measurement of spectral information over a range of wavelengths. Of particular importance and interest to analytical spectroscopists is the development of simultaneous multielement analysis systems. The development and implementation of such analyses have been hampered by a lack of convenient and versatile multichannel spectrochemical measurement systems. New detector subsystems based on modern electronic image sensors are helping to overcome this obstacle. One type of electronic image sensor is the self-scanning linear array of silicon photodiodes. These arrays are available with densities of 1024 photodiodes per in and in lengths of up to 1 in. They are packaged in conventional dual-in-line integrated circuit packages complete with the necessary scanning circuitry. These sensors have simple and inexpensive control and measurement circuitry, and superior blooming and lag performance when compared to most other electronic image sensors. In addition, the signal integrating capability of the arrays is a flexible and powerful asset for many spectrochemical measurements. These and other operational characteristics of photodiode arrays are emphasized in this study. In addition, the measurement capability of a computer coupled photodiode array spectrometer based on a 1024 element array which is capable of simultaneously measuring over 50 nm (500 Å) of continuous spectral information anywhere from 200 to 1000 nm is illustrated.

scholarly journals 1/f Noise Modelling and Characterization for CMOS Quanta Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5459
Author(s):  
Wei Deng ◽  
Eric R. Fossum
Keyword(s):  
Analog Circuits ◽  
Image Sensor ◽  
Image Sensors ◽  
Correlated Double Sampling ◽  
Cmos Image Sensors ◽  
Source Follower ◽  
Cmos Analog Circuits ◽  
Different Origins ◽  
Noise Models ◽  
Fitting Model

This work fits the measured in-pixel source-follower noise in a CMOS Quanta Image Sensor (QIS) prototype chip using physics-based 1/f noise models, rather than the widely-used fitting model for analog designers. This paper discusses the different origins of 1/f noise in QIS devices and includes correlated double sampling (CDS). The modelling results based on the Hooge mobility fluctuation, which uses one adjustable parameter, match the experimental measurements, including the variation in noise from room temperature to –70 °C. This work provides useful information for the implementation of QIS in scientific applications and suggests that even lower read noise is attainable by further cooling and may be applicable to other CMOS analog circuits and CMOS image sensors.

Influence of Transparent Electrodes on Image Sensor Performance

1985 ◽  
Vol 49 ◽  
Author(s):  
K. Kempter ◽  
H. Wieczrek ◽  
M. Hoheisel
Keyword(s):  
Response Times ◽  
Image Sensor ◽  
Image Sensors ◽  
Transparent Electrodes ◽  
Sensor Performance ◽  
Decay Times ◽  
Sensor Cell ◽  
Photocurrent Decay

AbstractThe short response times required for image sensors demand blocking contacts at the sensor cell. It was found that the junctions between transparent electrodes (ITO or a thin palladium film) and the metallic back electrode with a-Si:H form blocking contacts yielding photocurrent decay times of the order of some microseconds. The two different time regimes observed for the decay are interpreted as being limited by the drift and the release of holes respectively.

scholarly journals Development of Obstacle Recognition System of Humanoids Using Relative Disparity Maps from Small Range Image Sensors

2007 ◽  
Vol 19 (3) ◽  
pp. 290-297
Author(s):  
Naotaka Hikosaka ◽  
◽  
Kei Watanabe ◽  
Kazunori Umeda
Keyword(s):  
Recognition System ◽  
Image Sensor ◽  
Image Sensors ◽  
Easy Plane ◽  
Reference Plane ◽  
Small Range ◽  
Range Image ◽  
Disparity Maps ◽  
Integrated Controller

We discuss the recognition of obstacles by detecting a plane using relative disparity maps obtained from a small range image sensor incorporated in a humanoid. Our proposal enables easy plane detection and obstacle recognition using relative disparity from a reference plane alone. We built an integrated controller that feeds back obstacle information to the humanoid. We confirmed through experiments that the humanoid recognized obstacles and autonomously stopped walking.

scholarly journals Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2073 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensor ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

scholarly journals Low-Cost 2D Index and Straightness Measurement System Based on a CMOS Image Sensor

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5461 ◽  
Author(s):  
Alain Küng ◽  
Benjamin A. Bircher ◽  
Felix Meli
Keyword(s):  
Measurement System ◽  
Degrees Of Freedom ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Oxide Semiconductor ◽  
Measurement Systems ◽  
Starting Point ◽  
Sensor Properties

Accurate traceable measurement systems often use laser interferometers for position measurements in one or more dimensions. Since interferometers provide only incremental information, they are often combined with index sensors to provide a stable reference starting point. Straightness measurements are important for machine axis correction and for systems having several degrees of freedom. In this paper, we investigate the accuracy of an optical two-dimensional (2D) index sensor, which can also be used in a straightness measurement system, based on a fiber-coupled, collimated laser beam pointing onto an image sensor. Additionally, the sensor can directly determine a 2D position over a range of a few millimeters. The device is based on a simple and low-cost complementary metal–oxide–semiconductor (CMOS) image sensor chip and provides sub-micrometer accuracy. The system is an interesting alternative to standard techniques and can even be implemented on machines for real-time corrections. This paper presents the developed sensor properties for various applications and introduces a novel error separation method for straightness measurements.

scholarly journals Angular Light, Polarization and Stokes Parameters Information in a Hybrid Image Sensor with Division of Focal Plane

Sensors ◽  
2020 ◽  
Vol 20 (12) ◽  
pp. 3391
Author(s):  
Francelino Freitas Carvalho ◽  
Carlos Augusto de Moraes Cruz ◽  
Greicy Costa Marques ◽  
Kayque Martins Cruz Damasceno
Keyword(s):  
Integrated Circuit ◽  
Incident Angle ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Light Polarization ◽  
Oxide Semiconductor ◽  
Stokes Parameters ◽  
New Paradigm ◽  
Depth Sensing ◽  
3D Image Reconstruction

Targeting 3D image reconstruction and depth sensing, a desirable feature for complementary metal oxide semiconductor (CMOS) image sensors is the ability to detect local light incident angle and the light polarization. In the last years, advances in the CMOS technologies have enabled dedicated circuits to determine these parameters in an image sensor. However, due to the great number of pixels required in a cluster to enable such functionality, implementing such features in regular CMOS imagers is still not viable. The current state-of-the-art solutions require eight pixels in a cluster to detect local light intensity, incident angle and polarization. The technique to detect local incident angle is widely exploited in the literature, and the authors have shown in previous works that it is possible to perform the job with a cluster of only four pixels. In this work, the authors explore three novelties: a mean to determine three of four Stokes parameters, the new paradigm in polarization cluster-pixel design, and the extended ability to detect both the local light angle and intensity. The features of the proposed pixel cluster are demonstrated through simulation program with integrated circuit emphasis (SPICE) of the regular Quadrature Pixel Cluster and Polarization Pixel Cluster models, the results of which are compliant with experimental results presented in the literature.

scholarly journals Super Field-of-View Lensless Camera by Coded Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 1329 ◽  
Author(s):  
Tomoya Nakamura ◽  
Keiichiro Kagawa ◽  
Shiho Torashima ◽  
Masahiro Yamaguchi
Keyword(s):  
Imaging System ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Image Sensors ◽  
Computational Imaging ◽  
Field Of View ◽  
Oxide Semiconductor ◽  
Back Side ◽  
Cmos Image Sensors ◽  
Rich Information

A lensless camera is an ultra-thin computational-imaging system. Existing lensless cameras are based on the axial arrangement of an image sensor and a coding mask, and therefore, the back side of the image sensor cannot be captured. In this paper, we propose a lensless camera with a novel design that can capture the front and back sides simultaneously. The proposed camera is composed of multiple coded image sensors, which are complementary-metal-oxide-semiconductor (CMOS) image sensors in which air holes are randomly made at some pixels by drilling processing. When the sensors are placed facing each other, the object-side sensor works as a coding mask and the other works as a sparsified image sensor. The captured image is a sparse coded image, which can be decoded computationally by using compressive sensing-based image reconstruction. We verified the feasibility of the proposed lensless camera by simulations and experiments. The proposed thin lensless camera realized super-field-of-view imaging without lenses or coding masks and therefore can be used for rich information sensing in confined spaces. This work also suggests a new direction in the design of CMOS image sensors in the era of computational imaging.

A 4-tap global shutter pixel with enhanced IR sensitivity for VGA time-of-flight CMOS image sensors

2020 ◽  
Vol 2020 (7) ◽  
pp. 103-1-103-6
Author(s):  
Taesub Jung ◽  
Yonghun Kwon ◽  
Sungyoung Seo ◽  
Min-Sun Keel ◽  
Changkeun Lee ◽  
...  
Keyword(s):  
Time Of Flight ◽  
Light Sensitivity ◽  
Image Sensor ◽  
Image Sensors ◽  
Double Sampling ◽  
Back Side ◽  
Long Distance ◽  
Correlated Double Sampling ◽  
Cmos Image Sensors ◽  
Side Illumination

An indirect time-of-flight (ToF) CMOS image sensor has been designed with 4-tap 7 μm global shutter pixel in back-side illumination process. 15000 e- of high full-well capacity (FWC) per a tap of 3.5 μm pitch and 3.6 e- of read-noise has been realized by employing true correlated double sampling (CDS) structure with storage gates (SGs). Noble characteristics such as 86 % of demodulation contrast (DC) at 100MHz operation, 37 % of higher quantum efficiency (QE) and lower parasitic light sensitivity (PLS) at 940 nm have been achieved. As a result, the proposed ToF sensor shows depth noise less than 0.3 % with 940 nm illuminator in even long distance.

A Novel Segment-Based Data Transfer Scheme for Low-Power CMOS Surveillance Image Sensors

2017 ◽  
Vol 27 (02) ◽  
pp. 1850027
Author(s):  
Mehdi Habibi ◽  
Khatereh Akbari ◽  
Marzieh Mokhtari ◽  
Peyman Moallem
Keyword(s):  
Data Transfer ◽  
Cmos Technology ◽  
Image Sensor ◽  
Data Rate ◽  
Image Sensors ◽  
Solar Panels ◽  
Transfer Scheme ◽  
Data Rates ◽  
Low Power Cmos ◽  
The Given

Smart image sensors with low data rate output are well fitted for security and surveillance tasks, since at lower data rates, power consumption is reduced and the image sensor can be operated with limited energy resources such as solar panels. In this paper, a new data transfer scheme is presented to reduce the data rate of the pixels which have undergone value change. Although different pixel difference detecting architectures have been previously reported but it is shown that the given method is more effective in terms of power dissipation and data transfer rate reduction. The proposed architecture is evaluated as a [Formula: see text]-pixel sensor in a standard CMOS technology and comparison with other data transfer approaches is performed in the same process and configuration.

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