scholarly journals Design of RF Receiver Front end Subsystems with Low Noise Amplifier and Active Mixer for Intelligent Transportation Systems Application

2020 ◽  
Vol 70 (6) ◽  
pp. 633-641
Author(s):  
Shivesh Triapthi ◽  
B. Mohapatra ◽  
Prabhakar Tiwari ◽  
Nagendra Prasad Pathak ◽  
Manoranjan Parida
Keyword(s):  
Noise Figure ◽  
Intelligent Transportation ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Rf Receiver ◽  
Active Mixer ◽  
Receiver System ◽  
Noise Amplifier

This paper presents the design, simulation, and characterization of a novel low-noise amplifier (LNA) and active mixer for intelligent transportation system applications. A low noise amplifier is the key component of RF receiver systems. Design, simulation, and characterization of LNA have been performed to obtain the optimum value of noise figure, gain and reflection coefficient. Proposed LNA achieves measured voltage gains of ~18 dB, reflection coefficients of -20 dB, and noise figures of ~2 dB at 5.9 GHz, respectively. The active mixer is a better choice for a modern receiver system over a passive mixer. Key sight advanced design system in conjunction with the electromagnetic simulation tool, has been to obtain the optimal conversion gain and noise figure of the active mixer. The lower and upper resonant frequencies of mixer have been obtained at 2.45 GHz and 5.25 GHz, respectively. The measured conversion gains at lower and upper frequencies are 12 dB and 10.2 dB, respectively. The measured noise figures at lower and upper frequencies are 5.8 dB and 6.5 dB, respectively. The measured mixer interception point at lower and upper frequencies are 3.9 dBm and 4.2 dBm.

scholarly journals Design of Low Noise Amplifier for 1.5 GHz

SCITECH Nepal ◽  
2018 ◽  
Vol 13 (1) ◽  
pp. 40-47
Author(s):  
Bijaya Shrestha
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Rf Receiver ◽  
Current Consumption ◽  
Additional Noise ◽  
Noise Amplifier ◽  
Rf Signal ◽  
Intercept Point

Low Noise Amplifier (LNA) is a front-end device of a radio frequency (RF) receiver used to increase the amplitude of an RF signal without much additional noise, thereby increasing the noise figure of the system. This paper presents design, simulation, and prototype of an LNA operating at 1.5 GHz for the bandwidth of 100 MHz. The circuit was simulated using Advanced Design System (ADS). The components used are Surface Mount Devices (SMDs); with transistor "Infineon BFP420" as a major component. Other components are resistors, capacitors, and inductors; inductors being superseded by microstrip lines. The circuit was fabricated on FR4 board. The measurements of several parameters of LNA were made using Vector Network Analyzer (VNA), Noise Figure Meter; and Spectrum Analyzer. The LNA has minimum gain of 15.4 dB and maximum noise figure of 1.33 dB. It is unconditionally stable from 50 MHz to 10 GHz. DC supply is 5V and the current consumption is 10 mA. This LNA offers Output-Third­Order-Intercept-Point (OJP3) of about 1 4 dBm.

A MICROWAVE LOW NOISE AMPLIFIER BASED ON LADDER MATCHING NETWORK FOR WIRELESS APPLICATIONS

2016 ◽  
Vol 78 (5-10) ◽  
Author(s):  
Abu Bakar Ibrahim ◽  
Ahmad Zamzuri Mohamad Ali ◽  
Che Zalina Zulkifli
Keyword(s):  
High Performance ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Wireless Applications ◽  
Matching Networks ◽  
Receiver System ◽  
Wireless Application ◽  
Noise Amplifier

This paper present a microwave low noise amplifier based on ladder matching networks for Wireless applications. The designed circuit is simulated with Advanced Design System (ADS) software. Specifically, Low Noise Amplifier which is located at the first block of receiver system, makes it one of the important element in improving signal transmition. From the statement above, this study was aimed to design a microwave low noise amplifier for wireless application that will work at 5.8 GHz using high-performance low noise superHEMT transistor FHX76LP manufactured by Eudyna Technologies. The low noise amplifier (LNA) produced gain of 17.2 dB and noise figure (NF) of 0.914 dB. The input reflection (S11) and output return loss (S22) are -17.8 dB and -19.6 dB respectively. The bandwidth of the amplifier recorded is 1.5 GHz. The input sensitivity is compliant with the IEEE 802.16d standards.

scholarly journals Design of Low Power UWB CMOS Low Noise Amplifier using Active Inductor for WLAN Receiver

2018 ◽  
Vol 7 (2.24) ◽  
pp. 448
Author(s):  
S Manjula ◽  
M Malleshwari ◽  
M Suganthy
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Wide Band ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Active Inductor ◽  
Chip Area ◽  
Noise Amplifier

This paper presents a low power Low Noise Amplifier (LNA) using 0.18µm CMOS technology for ultra wide band (UWB) applications. gm boosting common gate (CG) LNA is designed to improve the noise performance.  For the reduction of on chip area, active inductor is employed at the input side of the designed LNA for input impedance matching. The proposed UWB LNA is designed using Advanced Design System (ADS) at UWB frequency of 3.1-10.6 GHz. Simulation results show that the gain of 10.74+ 0.01 dB, noise figure is 4.855 dB, input return loss <-13 dB and 12.5 mW power consumption.  

The Special Research on a Low Noise Amplifier

2012 ◽  
Vol 605-607 ◽  
pp. 2057-2061
Author(s):  
Xin Yin ◽  
Yi Yao ◽  
Jin Ling Jia
Keyword(s):  
Wireless Local Area Network ◽  
Local Area Network ◽  
Noise Figure ◽  
Design Method ◽  
Local Area ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Area Network ◽  
Noise Amplifier

This paper studies a low noise amplifier design method for 5.8G wireless local area network. Using the software of designing RF circuit ADS(Advanced Design System) and Avago Technologies’s ATF-36077,we designed a three-cascade LNA. In 5.725G~5.85GHz range, noise figure less than 0.5dB, more than 30dB gain, input and output standing wave ratio less than 1.3dB.The LNA meet the design requirements.

Optimized Design of Low Power Complementary Metal Oxide Semiconductor Low Noise Amplifier for Zigbee Application

2021 ◽  
Vol 18 (4) ◽  
pp. 1327-1330
Author(s):  
S. Manjula ◽  
R. Karthikeyan ◽  
S. Karthick ◽  
N. Logesh ◽  
M. Logeshkumar
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Supply Voltage ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Oxide Semiconductor ◽  
Design System ◽  
Cmos Process ◽  
Design Specifications ◽  
Noise Amplifier

An optimized high gain low power low noise amplifier (LNA) is presented using 90 nm CMOS process at 2.4 GHz frequency for Zigbee applications. For achieving desired design specifications, the LNA is optimized by particle swarm optimization (PSO). The PSO is successfully implemented for optimizing noise figure (NF) when satisfying all the design specifications such as gain, power dissipation, linearity and stability. PSO algorithm is developed in MATLAB to optimize the LNA parameters. The LNA with optimized parameters is simulated using Advanced Design System (ADS) Simulator. The LNA with optimized parameters produces 21.470 dB of voltage gain, 1.031 dB of noise figure at 1.02 mW power consumption with 1.2 V supply voltage. The comparison of designed LNA with and without PSO proves that the optimization improves the LNA results while satisfying all the design constraints.

Design of Microwave LNA Based on Ladder Matching Networks for WiMAX Applications

2016 ◽  
Vol 6 (4) ◽  
pp. 1717
Author(s):  
Abu Bakar Ibrahim ◽  
Ahmad Zamzuri Mohamad Ali
Keyword(s):  
High Performance ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Long Distance ◽  
High Data ◽  
Receiver System ◽  
Noise Amplifier ◽  
Increasing Demand ◽  
Technology Transformation

<p>Advancement in the wireless industry, internet access without borders and increasing demand for high data rate wireless digital communication moving us toward the optimal development of communication technology. Wireless communication is a technology that plays an important role in current technology transformation. Broadband communication is a method of telecommunication that are available for transmitting large amounts of data, voice and video over long distance using different frequencies. Specifically, Low Noise Amplifier which is located at the first block of receiver system, makes it one of the important element in improving signal transmition. This study was aimed to design a microwave Low Noise Amplifier for wireless application that will work at 5.8 GHz using  high-performance low noise superHEMT transistor FHX76LP manufactured by Eudyna Technologies. The low noise amplifier (LNA) produced gain of 16.8 dB and noise figure (NF) of 1.20 dB. The input reflection (S<sub>11</sub>) and output return loss (S<sub>22</sub>) are -10.5 dB and -13.3 dB respectively. The bandwidth of the amplifier recorded is 1.2 GHz. The input sensitivity is compliant with the IEEE 802.16 standards.</p>

scholarly journals The Development of Cascode Low Noise Amplifier with Double Feedback Technique Architecture for Wireless Communication

2021 ◽  
Vol 87 (2) ◽  
pp. 82-89
Author(s):  
Abu Bakar Ibrahim ◽  
Nurul Husna Abdul Kahar ◽  
Hafizul Fahri Hanafi ◽  
Ashardi Abas ◽  
Shamsul Arrieya Ariffin
Keyword(s):  
Wireless Communication ◽  
Return Loss ◽  
Noise Figure ◽  
Long Term Evolution ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Term Evolution ◽  
Noise Amplifier

The paper aims to develop a new cascode low noise amplifier (LNA) by using double feedback technique architecture for wireless communication especially for long term evolution (LTE). The objective of this article is to display the improved performance of gain by minimizing noise figures with innovative techniques for the realization of Long Term Evolution (LTE). The innovation technique with implementation double feedback technique architecture outlines the possibility to improve the performance in various parameters such as bandwidth, stability, gain, noise figure, power consumption and complexity. The realization using cascode LNA is verified by using FHX76LP Super Low Noise HEMT that operate at 5.8 GHz in compliant with LTE standard. The Advance Design System (ADS) software is used to obtain characteristics for collecting data in a smith chart and s-parameter generated by simulation. The cascode LNA with the double feedback technique achieves an average gain of 20.887 dB with a noise figure of 0.341 dB. The input return loss and output return loss are – 14.354 dB and – 11.879 dB respectively. The outcome of this work will contribute to providing a better wireless signal receiver especially for the LTE standard and it potentially addressing wireless communication issues in rural areas.

scholarly journals Concurrent Quad-band Low Noise Amplifier (QB-LNA) using Multisection Impedance Transformer

2017 ◽  
Vol 7 (4) ◽  
pp. 2061
Author(s):  
Teguh Firmansyah ◽  
Anggoro Suryo Pramudyo ◽  
Siswo Wardoyo ◽  
Romi Wiryadinata ◽  
Alimuddin Alimuddin
Keyword(s):  
Figure Of Merit ◽  
Noise Figure ◽  
Impedance Matching ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Q Factor ◽  
Output Impedance ◽  
Input And Output ◽  
Noise Amplifier

<span>A quad-band low noise amplifier (QB-LNA) based on multisection impedance transformer designed and evaluated in this research. As a novelty, a multisection impedance transformer was used to produce QB-LNA. A multisection impedance transformer is used as input and output impedance matching because it has higher stability, large Q factor, and low noise than lumpedcomponent.The QB-LNA was designed on FR4 microstrip substrate with </span><span>e</span><span>r= 4.4, thickness h=0.8 mm, and tan </span><span>d</span><span>= 0.026. The proposed QB-LNA was designed and analyzed by Advanced Design System (ADS).The simulation has shown that QB-LNA achieves gain (S<sub>21</sub>) of 22.91 dB, 16.5 dB,  11.18 dB, and 7.25 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively.The QB-LNA obtainreturn loss (S<sub>11</sub>) of -21.28 dB, -31.87 dB,  -28.08 dB, and -30.85 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. It also achieves a noise figure (nf) of 2.35 dB, 2.13 dB, 2.56 dB, and 3.55 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. This research also has shown that the figure of merit (FoM) of the proposed QB-LNA is higher than that of another multiband LNA.</span>

scholarly journals Perancangan Low Noise Amplifier dengan Teknik Non Simultaneous Conjugate Match untuk Aplikasi Radar S-Band

2016 ◽  
Vol 15 (2) ◽  
pp. 45
Author(s):  
Yana Taryana ◽  
Achmad Munir ◽  
Yaya Sulaeman ◽  
Dedi
Keyword(s):  
Standing Wave ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Voltage Standing Wave Ratio ◽  
Design System ◽  
Trade Off ◽  
Noise Amplifier

Radar merupakan sistem pemancar dan penerima gelombang elektromagnetik untuk mendeteksi, mengukur jarak dan membuat peta benda benda seperti pesawat terbang, kapal laut, kendaran bermotor dan informasi cuaca. Salah satu kendala yang dihadapi pada sistem radar adalah sinyal pantulan yang memiliki daya yang rendah sehingga kualitas penerimaan menjadi kurang baik. Untuk mengatasi kendala tersebut dibutuhkan penguat daya pada sistem penerima yaitu Low Noise Amplifier (LNA). Oleh karena itu, tulisan ini memaparkan perancangan LNA dengan menggunakan teknik Non Simultaneous Conjugate Match (NSCM) untuk aplikasi radar S-Band. Teknik ini memberikan kemudahan dalam menentukan nilai trade off (TO) untuk nilai gain, noise figure (NF) dan Voltage Standing Wave Ratio (VSWR) yang diinginkan. Dalam proses perancangannya, perangkat lunak Agilent Design System (ADS) 2011 digunakan untuk mendapatkan hubungan antara lingkaran gain, lingkaran NF, lingkaran VSWR, dan lingkaran mismatch factor (M). Dari hubungan tersebut diperoleh nilai impedansi masukan dan keluaran dari komponen aktif. Dalam tulisan ini, LNA dirancang dua tingkat untuk mendapatkan penguatan yang tinggi. Masing-masing tingkat menggunakan komponen aktif BJT BFP420 dengan penguatan dirancang sebesar 13,50 dB untuk tingkat pertama dan kedua, dan M sebesar 0,98. Sedangkan untuk saluran penyesuai impedansinya menggunakan substrat teflon fiberglass DiClad527. Hasil simulasi menunjukkan karakteristik LNA pada frekuensi 3 GHz yaitu gain sebesar 28,80 dB, NF sebesar 2,80 dB, VSWRin sebesar 1,05 dan VSWRout sebesar 1,1.

scholarly journals Design of Microwave LNA Based on Ladder Matching Networks for WiMAX Applications

2016 ◽  
Vol 6 (4) ◽  
pp. 1717
Author(s):  
Abu Bakar Ibrahim ◽  
Ahmad Zamzuri Mohamad Ali
Keyword(s):  
High Performance ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Long Distance ◽  
High Data ◽  
Receiver System ◽  
Noise Amplifier ◽  
Increasing Demand ◽  
Technology Transformation

<p>Advancement in the wireless industry, internet access without borders and increasing demand for high data rate wireless digital communication moving us toward the optimal development of communication technology. Wireless communication is a technology that plays an important role in current technology transformation. Broadband communication is a method of telecommunication that are available for transmitting large amounts of data, voice and video over long distance using different frequencies. Specifically, Low Noise Amplifier which is located at the first block of receiver system, makes it one of the important element in improving signal transmition. This study was aimed to design a microwave Low Noise Amplifier for wireless application that will work at 5.8 GHz using  high-performance low noise superHEMT transistor FHX76LP manufactured by Eudyna Technologies. The low noise amplifier (LNA) produced gain of 16.8 dB and noise figure (NF) of 1.20 dB. The input reflection (S<sub>11</sub>) and output return loss (S<sub>22</sub>) are -10.5 dB and -13.3 dB respectively. The bandwidth of the amplifier recorded is 1.2 GHz. The input sensitivity is compliant with the IEEE 802.16 standards.</p>

Sign in / Sign up

Export Citation Format

Share Document