scholarly journals Long-wavelength GaInNAs/GaAs Vertical-cavity Surface-emitting Laser for Communication Applications

2020 ◽  
Vol 8 (1) ◽  
pp. 107-111
Author(s):  
Faten A. Chaqmaqchee
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Temperature Spectra ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Emitting Lasers ◽  
The Impact ◽  
Vertical Cavity

This paper presents a comprehensive study of optical and electrical properties of vertical-cavity surface-emitting lasers(VCSELS) for long wavelength communication applications. The device consists of GaInNAs/GaAs multi-quantum wells QWs that enclosed between standard top and bottom epitaxially grown on AlGaAs/GaAs distributed Bragg reflectors. The impact of driven currents and injecting optical powers through QWs layers on the output light emission is addressed. Room temperature spectra measurements are performed at various applied currents using 980 nm pump laser and maximum intensity amplitude at around 21 dB was achieved.

Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes

1996 ◽  
Vol 421 ◽  
Author(s):  
D.I. Babic ◽  
V. Jayaraman ◽  
N. M. Margalit ◽  
K. Streubel ◽  
M.E. Heimbuch ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Active Regions ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Lattice Matched

AbstractLong-wavelength (1300/1550 nm) vertical-cavity surface-emitting lasers (VCSELs) have been much more difficult to realize than VCSELs at shorter wavelengths such as 850/980 nm. The primary reason for this has been the low refractive index difference and reflectivity associated with lattice-matched InP/InGaAsP mirrors. A solution to this problem is to “wafer-fuse” high-reflectivity GaAs/AlGaAs mirrors to InP/InGaAsP active regions. This process has led to the first room-temperature continuous-wave (CW) 1.54 μm VCSELs. In this paper, we discuss two device geometries which employ wafer-fused mirrors, both of which lead to CW operation. We also discuss fabrication of WDM arrays using long-wavelength VCSELs.

MID-IR Vertical Cavity Surface-Emitting Lasers

1997 ◽  
Vol 484 ◽  
Author(s):  
I. Vurgaftman ◽  
W. W. Bewley ◽  
C. L. Felix ◽  
E. H. Aifer ◽  
J. R. Meyer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Cavity Surface ◽  
Type Ii ◽  
Optically Pumped ◽  
Pulsed Mode ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractAn optically pumped mid-infrared vertical-cavity surface-emitting laser based on an active region with a “W” configuration of type-II antimonide quantum wells is reported. The emission wavelength of 2.9 ym has a weak temperature variation (dλ/dT ≈ 0.07 – 0.09 nm/K), and the multimode linewidth is quite narrow (2.5–4 nm). Lasing is observed up to T = 280 K in pulsed mode and up to 160 K cw. Under cw excitation at T = 78 K, the threshold pump power is as low as 4 mW for a 6 am spot, and the differential power conversion efficiency is 4.5%.

Submilliamp long-wavelength InP-based vertical-cavity surface-emitting laser with stable linear polarisation

2000 ◽  
Vol 36 (13) ◽  
pp. 1124 ◽  
Author(s):  
M. Ortsiefer ◽  
R. Shau ◽  
M. Zigldrum ◽  
G. Böhm ◽  
F. Köhler ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Long Wavelength ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity ◽  
Linear Polarisation ◽  
Stable Linear

scholarly journals Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications

1998 ◽  
Vol 72 (2) ◽  
pp. 135-137 ◽  
Author(s):  
H. Gebretsadik ◽  
K. Kamath ◽  
W.-D. Zhou ◽  
P. Bhattacharya ◽  
C. Caneau ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Laser Applications ◽  
Long Wavelength ◽  
Lateral Oxidation ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

SURFACE EMITTING LASERS

1992 ◽  
Vol 03 (03n04) ◽  
pp. 263-277 ◽  
Author(s):  
KENICHI IGA
Keyword(s):  
Cavity Surface ◽  
Photonic Integration ◽  
Parallel Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Technical Issues ◽  
Basic Technology ◽  
Emitting Lasers ◽  
Vertical Cavity

In this paper we review the progress and basic technology of vertical cavity surface emitting lasers together with related parallel surface operating optical devices. First, the concept of a vertical cavity surface emitting laser is presented, and then currently developed devices and their performances will be introduced. We will then feature some technical issues, such as multilayer structures, 2-dimensional arrays, photonic integration, etc. Lastly, future prospects for parallel lightwave subsystems using surface emitting lasers will be discussed.

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