scholarly journals Macroscopic Thin Film Deposition Model for the Two-Reactive-Gas Sputtering Process

2016 ◽  
Vol 8 (1) ◽  
pp. 62-78
Author(s):  
András Kelemen ◽  
Domokos Biró ◽  
Albert-Zsombor Fekete ◽  
László Jakab-Farkas ◽  
Róbert Rossi Madarász
Keyword(s):  
Process Control ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Nonlinear Phenomena ◽  
Variable Regions ◽  
Macroscopic Models ◽  
Good Grasp ◽  
Simulation Results ◽  
Complex Phenomena ◽  
Reactive Gas

AbstractThe presence of a second reactive gas in the magnetron sputtering chamber makes the process much more complicated, and the process control much more difficult than in the case of a single reactive gas. Macroscopic models have been developed in order to explain the complex phenomena and to provide support for the process control. These models are able to explain the nonlinearities of the process and the strong coupling between the control channels.This paper introduces a model created with the intention to of gaining a good grasp of the process, especially regarding the conditions necessary to obtain the required stoichiometry of the film deposited on the substrate. For this purpose, we modelled the formation of the desired ternary compound both directly from the available particle fluxes and from intermediary compounds. The surface of the substrate is divided into eight dynamically variable regions, covered by different compounds, each exposed to the streams of five types of particles.We present the analytical model and provide simulation results in order to demonstrate its capability toof describeing the nonlinear phenomena, which that characterisze the two-gas sputtering process.

The Simulation of Polycrystalline Silicon Thin Film Deposition in PECVD System

2011 ◽  
Vol 189-193 ◽  
pp. 2032-2036 ◽  
Author(s):  
Zhi Jian Wang ◽  
Xiao Feng Shang
Keyword(s):  
Thin Film ◽  
Deposition Rate ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Main Reaction ◽  
Silicon Thin Film ◽  
Simulation Results

Taking Silicon tetrachloride (SiCl4) and hydrogen (H2) as the reaction gas, by the method of plasma-enhanced chemical vapor deposition (PECVD), this paper simulates the deposition process of polycrystalline silicon thin film on the glass substrates in the software FLUENT. Three dimensional physical model and mathematics model of the simulated area are established. The reaction mechanism including main reaction equation and several side equations is given during the simulation process. The simulation results predict the velocity field, temperature distribution, and concentration profiles in the PECVD reactor. The simulation results show that the deposition rate of silicon distribution is even along the circumference direction, and gradually reduced along the radius direction. The deposition rate is about 0.005kg/(m2•s) at the center. The simulated result is basically consistent with the practical one. It means that numerical simulation method to predict deposition process is feasible and the results are reliable in PECVD system.

Advanced Process Control Expert System of CVD Membrane Thickness Based on Neural Network

2006 ◽  
Vol 505-507 ◽  
pp. 313-318 ◽  
Author(s):  
Ming Chang ◽  
Jen Cheng Chen ◽  
Jui Wen Chang ◽  
Jia Sheng Heh
Keyword(s):  
Neural Network ◽  
Expert System ◽  
Process Control ◽  
Process Parameters ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Membrane Thickness ◽  
On Line ◽  
Trained Neural Network

A membrane thickness process control expert system of chemical vapor deposition (CVD) based on neural network is presented. In general, there are many factors would influence the membrane quality. Most of them can be adjusted by changing the recipe, which are the process parameters of the working machines. Finding out a suitable and steady recipe and on-line real-time controlling the recipe is the target that process engineers devote to. Generally speaking, the recipe adjustment is based on the accumulation of experiences or learning from the try and error results. However, the process of thin film deposition is a very complicate and nonlinear system. It is very difficult to find out the relationships between the variation of process parameters and membrane quality. Therefore, a system was developed to simulate the CVD’s process using a technique of neural network. An expert system was then set up by extracting out the regular rule between process input and output from the trained neural network, which would provide references to engineers for the need of on-line recipe adjustment.

Statistical Process Control Based Supervisory Generalized Predictive Control of Thin Film Deposition Processes

2004 ◽  
Vol 128 (1) ◽  
pp. 315-325 ◽  
Author(s):  
Jionghua Jin ◽  
Huairui Guo ◽  
Shiyu Zhou
Keyword(s):  
Thin Film ◽  
Process Control ◽  
Statistical Process Control ◽  
Predictive Control ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Generalized Predictive Control ◽  
Statistical Process ◽  
Production Run

This paper presents a supervisory generalized predictive control (GPC) by combining GPC with statistical process control (SPC) for the control of the thin film deposition process. In the supervised GPC, the deposition process is described as an ARMAX model for each production run and GPC is applied to the in situ thickness-sensing data for thickness control. Supervisory strategies, developed from SPC techniques, are used to monitor process changes and estimate the disturbance magnitudes during production. Based on the SPC monitoring results, different supervisory strategies are used to revise the disturbance models and the control law in the GPC to achieve a satisfactory control performance. A case study is provided to demonstrate the developed methodology.

Multi-Physics Simulation of Amorphous Silicon Thin-Film Deposition in Plasma Enhanced Chemical Vapor Reactors

2011 ◽  
Vol 337 ◽  
pp. 266-269 ◽  
Author(s):  
Li Xin Lu ◽  
Gui Qin Li ◽  
Guo Jun Jin ◽  
Yi Sun
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Electrode Spacing ◽  
Silicon Thin Film ◽  
Physics Simulation ◽  
Simulation Results ◽  
Dimensional Simulation

Two-dimensional simulation in Plasma Enhanced Chemical Vapor Deposition (PECVD) is conducted by using multi-physics analysis method. Simulation results show the growth process of amorphous silicon thin film in the PECVD reactor. The effect of process parameters (such as power supply power, electrode spacing, etc.) on the deposition rate and electric field strength is obtained, and the optimum conditions needed for growth of amorphous silicon thin film is achieved as well. It was experimentally proved that the simulation results are consistent with the experimental results, and provide a theoretical basis for adjusting and optimizing the film preparation process.

Nanocrystal-ZnO Thin Film Deposition by a Novel Reactive Gas-Timing RF Magnetron Sputtering Provided for UV Photodetectors

2010 ◽  
Vol 93-94 ◽  
pp. 537-540
Author(s):  
P. Panprom ◽  
S. Porntheeraphat ◽  
Win Bunjongpru ◽  
T. Tiwawong ◽  
W. Yamwong ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Rf Magnetron Sputtering ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Thin Film ◽  
Uv Detector ◽  
Si Substrates ◽  
Msm Photodetector ◽  
Reactive Gas

The fabrication and characterizations of nanocrystal-ZnO thin film used as active layer of MSM-photodetector structure are reported. The ZnO thin film were successfully sputtered on SiO2/Si substrates without heating or annealing processes by using a novel reactive gas-timing technique. In our experiment, the ZnO thin film properties with different gas-timing ratio of Ar/O2 were investigated. For fabricating of UV detector, the Al interdigitate electrode was deposited on SiO2/Si substrate by DC sputtering process and ZnO thin film was deposited as active layer. The response wavelength peak occurs at around 380 nm corresponding to ZnO energy bandgap of 3.2 eV .The I-V measurements indicates the Schottky behavior of ZnO on Al contact.

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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