Advanced Process Control Expert System of CVD Membrane Thickness Based on Neural Network

2006 ◽  
Vol 505-507 ◽  
pp. 313-318 ◽  
Author(s):  
Ming Chang ◽  
Jen Cheng Chen ◽  
Jui Wen Chang ◽  
Jia Sheng Heh

A membrane thickness process control expert system of chemical vapor deposition (CVD) based on neural network is presented. In general, there are many factors would influence the membrane quality. Most of them can be adjusted by changing the recipe, which are the process parameters of the working machines. Finding out a suitable and steady recipe and on-line real-time controlling the recipe is the target that process engineers devote to. Generally speaking, the recipe adjustment is based on the accumulation of experiences or learning from the try and error results. However, the process of thin film deposition is a very complicate and nonlinear system. It is very difficult to find out the relationships between the variation of process parameters and membrane quality. Therefore, a system was developed to simulate the CVD’s process using a technique of neural network. An expert system was then set up by extracting out the regular rule between process input and output from the trained neural network, which would provide references to engineers for the need of on-line recipe adjustment.

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.


2013 ◽  
Vol 1536 ◽  
pp. 133-138
Author(s):  
I-Syuan Lee ◽  
Yue Kuo

ABSTRACTThe PECVD intrinsic, n+, and p+ a-Si:H thin film deposition processes have been studied by the optical emission spectroscope to monitor the plasma phase chemistry. Process parameters, such as the plasma power, pressure, and gas flow rate, were correlated to SiH*, Hα*, and Hβ* optical intensities. For all films, the deposition rate increases with the increase of the SiH* intensity. For the doped films, the Hα*/SiH* ratio is a critical factor affecting the resistivity. The existence of PH3 or B2H6 in the feed stream enhances the deposition rate. Changes of the free radicals intensities can be used to explain variation of film characteristics under different deposition conditions.


1999 ◽  
Vol 573 ◽  
Author(s):  
J. Etrillard ◽  
H. Maher ◽  
M. Medjdoub ◽  
J. L. Courant ◽  
Y. I. Nissim

ABSTRACTThe use of a low ion energy of an extremely dense plasma has been studied as a dry etching as well as a thin film deposition tool (same source, two different reactors) for InP and GaAs device processing. Under these working conditions it is expected to control well the etch depth or in the case of deposition to obtain high deposition rates. In all cases minimun ion damages are induced on the processed substrate. Both technologies are presented here from the point of view of material analysis as well as device processing demonstration. For etching, the gate recess of an InP-based HEMT has been addressed as one of the key technological step that requires such properties for good device performances. InGaAs/InAlAs HEMT like structures have been grown and the recess of the InGaAs layer has been conducted with a 13eV SiCl4 inductively coupled plasma (ICP). DLTS and AFM measurements made on the exposed AlinAs surface after InGaAs removal indicate that device quality on its electrical and structural properties are achieved. Passivation of fully processed HEMT devices with a ICP enhanced chemical vapor deposition (ICPECVD) silicon nitride film is being studied.


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