Integrated Circuits and 3D-Packaging for Low-Power 24 GHz Front End

Frequenz ◽  
2004 ◽  
Vol 58 (3-4) ◽  
Author(s):  
Chafik Meliani ◽  
Prodyut Talukder ◽  
Jochen Hilsenbeck ◽  
Meik Huber ◽  
Georg Böck ◽  
...  
Author(s):  
G. Tasselli ◽  
B. Wang ◽  
S. Ghamari ◽  
C. Robert ◽  
C. Botteron ◽  
...  

Frequenz ◽  
2004 ◽  
Vol 58 (3-4) ◽  
Author(s):  
Stefan von der Mark ◽  
Meik Huber ◽  
Mathias Wittwer ◽  
Wolfgang Heinrich ◽  
Georg Boeck

2019 ◽  
Vol 8 (4) ◽  
pp. 1802-1808

The Front end read out circuits are major block in the implementation of Capacitive MEMS accelerometer. Front end read-out circuits comprises of preamplifier block containing folded cascode fully differential operational amplifier which are required for the signal conditioning of the signals received from the MEMS sensors. The op-amps are prime elements in design and implementation of mixed signal integrated circuits. The high gain and low power of the designed circuits helps in the designing of high precision IC’s for numerous application. Amongst the available topologies folded cascode topology plays vital role in the design and development of low power, high gain read out circuits. This paper illustrates the design and analysis of low power, high gain fully differential Folded Cascode Operational Amplifier for front end read out circuits. The designed op-amp exhibits a power consumption or dissipation of 92.14 μW and relatively higher open loop DC gain value with a value calculated at 81.33 dB by employing folded cascode topology. The UGB and Phase Margin for the selected design are 35 MHz and 83.60 respectively. The design operates at 5V power supply with the bias current of 12.11 μA. The circuit design and simulations have been implemented using 0.18 μm CMOS technology.


2010 ◽  
Vol E93-C (6) ◽  
pp. 785-795
Author(s):  
Sung-Jin KIM ◽  
Minchang CHO ◽  
SeongHwan CHO
Keyword(s):  
Rfid Tag ◽  

2021 ◽  
Vol 11 (1) ◽  
pp. 429
Author(s):  
Min-Su Kim ◽  
Youngoo Yang ◽  
Hyungmo Koo ◽  
Hansik Oh

To improve the performance of analog, RF, and digital integrated circuits, the cutting-edge advanced CMOS technology has been widely utilized. We successfully designed and implemented a high-speed and low-power serial-to-parallel (S2P) converter for 5G applications based on the 28 nm CMOS technology. It can update data easily and quickly using the proposed address allocation method. To verify the performances, an embedded system (NI-FPGA) for fast clock generation on the evaluation board level was also used. The proposed S2P converter circuit shows extremely low power consumption of 28.1 uW at 0.91 V with a core die area of 60 × 60 μm2 and operates successfully over a wide clock frequency range from 5 M to 40 MHz.


2021 ◽  
Vol 39 (4) ◽  
pp. 1221-1230
Author(s):  
Toshiki Kishi ◽  
Munehiko Nagatani ◽  
Shigeru Kanazawa ◽  
Kota Shikama ◽  
Takuro Fujii ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document