scholarly journals Temperature dependence of stress in CVD diamond films studied by Raman spectroscopy

2015 ◽  
Vol 33 (3) ◽  
pp. 620-626 ◽  
Author(s):  
Anna Dychalska ◽  
Kazimierz Fabisiak ◽  
Kazimierz Paprocki ◽  
Alina Dudkowiak ◽  
Mirosław Szybowicz
Keyword(s):  
Residual Stress ◽  
Thermal Stress ◽  
Temperature Dependence ◽  
Stress Component ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Intrinsic Stress ◽  
Diamond Surface ◽  
Raman Shift

Abstract Evolution of residual stress and its components with increasing temperature in chemical vapor deposited (CVD) diamond films has a crucial impact on their high temperature applications. In this work we investigated temperature dependence of stress in CVD diamond film deposited on Si(100) substrate in the temperature range of 30 °C to 480 °C by Raman mapping measurement. Raman shift of the characteristic diamond band peaked at 1332 cm-1 was studied to evaluate the residual stress distribution at the diamond surface. A new approach was applied to calculate thermal stress evolution with increasing tempera­ture by using two commonly known equations. Comparison of the residts obtained from the two methods was presented. The intrinsic stress component was calculated from the difference between average values of residual and thermal stress and then its temperature dependence was discussed.

A study on the residual stress measurement methods on chemical vapor deposition diamond films

1998 ◽  
Vol 13 (11) ◽  
pp. 3027-3033 ◽  
Author(s):  
Jung Geun Kim ◽  
Jin Yu
Keyword(s):  
Residual Stress ◽  
Chemical Vapor Deposition ◽  
Tensile Stress ◽  
Residual Stresses ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Peak Shift ◽  
Intrinsic Stress ◽  
Chemical Vapor Deposition Diamond

Diamond films were deposited on the p-type Si substrate with the hot filament chemical vapor deposition (HFCVD). Residual stresses in the films were measured in air by the laser curvature, the x-ray diffraction (XRD) dϕψ − sin2ψ, and the Raman peak shift methods. All of the measuring methods showed similar behaviors of residual stress that changed from a compressive to a tensile stress with increasing the film thickness. However, values of residual stresses obtained through the Raman and XRD methods were 3–4 times higher than those of the curvature method. These discrepancies involved the setting of materials constants of CVD diamond film, and determination of a peak shifting on the XRD and Raman method. In order to elucidate the disparity, we measured a Young's moduli of diamond films by using the sonic resonance method. In doing so, the Raman and XRD peak shift were calibrated by bending diamond/Si beams with diamond films by a known amount, with stress levels known a priori from the beam theory, and by monitoring the peak shifts simultaneously. Results of each measuring method showed well coincidental behaviors of residual stresses which have the stress range from −0.5 GPa to +0.7 GPa, and an intrinsic stress was caused about +0.7 GPa with tensile stress.

An Analytical Model for Intrinsic Residual Stress Effect on Out-of-Plane Deflection in Chemical-Vapor-Deposited Free-Standing Thick Film

2001 ◽  
Vol 695 ◽  
Author(s):  
Jeung-hyun Jeong ◽  
Young-Joon Baik ◽  
Dongil Kwon
Keyword(s):  
Residual Stress ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Intrinsic Stress ◽  
Stress Effect ◽  
Layer By Layer ◽  
Free Standing ◽  
Stress Variation ◽  
Layer Deposition ◽  
Out Of Plane

ABSTRACTThe effect of residual stress on the out-of-plane deflection in a free-standing thick diamond films was investigated theoretically and experimentally. The deflection is believed to be caused by the variation in residual stress with film thickness. Key idea of this study is that the stress variation may be produced by gradually increasing substrate deformation resulting from the layer-by-layer deposition of the film. The layer-by-layer deposition was modeled by using infinitesimal plate-bending theory, considering the two deformation modes of contraction or expansion and bending. To verify the suggested model, several hundred micron thick diamond films were fabricated on Si, Mo and W substrates of varying thicknesses by microwave plasma assisted chemical vapor deposition. The model's predictions on bowing, based on intrinsic stress value measured by the curvature method, were in good agreement with the experimentally measured curvature of the as-released films. Finally, it is concluded that the bowing of CVD thick films depends on the intrinsic stress variation of the film associated with gradual increase in substrate deformation.

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

Compact and Efficient HFCVD for Electronic Grade Diamond and Related Materials

2009 ◽  
Vol 1203 ◽  
Author(s):  
R. Vispute ◽  
Andrew Seiser ◽  
Geun Lee ◽  
Jaurette Dozier ◽  
Jeremy Feldman ◽  
...  
Keyword(s):  
Diamond Film ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Deposition Efficiency ◽  
Raman Shift ◽  
Compositional Variation ◽  
Force Microscopy ◽  
Substrate Rotation ◽  
Sample Rotation ◽  
Hot Filament

AbstractA compact and efficient hot filament chemical vapor deposition system has been designed for growing electronic-grade diamond and related materials. We report here the effect of substrate rotation on quality and uniformity of HFCVD diamond films on 2” wafers, using two to three filaments with power ranging from 500 to 600 Watt. Diamond films have been characterized using x-ray diffraction, Raman Spectroscopy, scanning electron microscopy and atomic force microscopy. Our results indicate that substrate rotation not only yields uniform films across the wafer, but crystallites grow larger than without sample rotation. Well-faceted microcrystals are observed for wafers rotated at 10 rpm. We also find that the Raman spectrum taken from various locations indicate no compositional variation in the diamond film and no significant Raman shift associated with intrinsic stresses. Results are discussed in the context of growth uniformity of diamond film to improve deposition efficiency for wafer-based electronic applications.

Growth Time Optimization of Fine Grained Diamond Coated Drills for Machining CFRP

2016 ◽  
Vol 836-837 ◽  
pp. 333-339 ◽  
Author(s):  
Xin Chang Wang ◽  
Xiao Tian Shen ◽  
Tian Qi Zhao ◽  
Fang Hong Sun ◽  
Bin Shen
Keyword(s):  
Residual Stress ◽  
Protective Coatings ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cutting Edge ◽  
Growth Time ◽  
Protective Effects ◽  
Initial Shape ◽  
Fine Grained ◽  
Film Substrate

Carbon fiber reinforced plastics (CFRP), which are widely used in the aerospace and some other new-tech industries, are considered very difficult to machine due to the material anisotropic and inhomogeneous features. Chemical vapor deposition (CVD) diamond films are suitable as protective coatings on cutting tools for machining advanced composite materials, owing to their extremely high hardness, favorable wear resistance, low friction coefficient and high thermal conductivity. Among different types of diamond films, the fine grained diamond (FGD) film can provide much more favorable environment for machining CFRP due to the small grain size, low surface roughness and the retentivity for the sharpness of the cutting edge. In the present study, aiming at drilling CFRP, FGD films of different thicknesses are deposited on Φ3 mm drills by controlling the growth time, adopting the common-used hot filament CVD (HFCVD) technology. It can be directly proved by deposition experiments that overlong growth time can induce spontaneous film delamination and removal before the cooling stage, probably as a result of the excessive residual stress concentrated on the complicated surfaces. As demonstrated by the cutting tests, with increasing the growth time, the main failure mode of the FGD coated drill changes from film delamination to flank wear/tipping to film delamination, and the maximum tool life exists when the growth time is moderate, because the flimsy film cannot provide sufficient protective effects on the film-substrate interface and even hasn’t totally cover the substrate, while there’s relatively higher residual stress in the film that is too thick, and such the residual stress can significantly deteriorate the film-substrate adhesion. Moreover, during the life cycle of each FGD film, relatively shorter growth time often means the slightly better hole quality, attributed to the retentivity of the initial shape of the uncoated drill that is optimal designed for machining CFRP, especially the weaker passivation of the cutting edge.

Effects of Seeding Over the Microstructure and Stresses of Diamond Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
S. Gupta ◽  
G. Morell ◽  
R. S. Katiyar ◽  
D. R. Gilbert ◽  
R. K. Singh
Keyword(s):  
Electron Cyclotron Resonance ◽  
Raman Band ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Interfacial Stress ◽  
Intrinsic Stress ◽  
Seeding Density ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray

AbstractWe have studied diamond films grown by electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) at low pressure (1.0 Torr) and temperatures (550–700 °C). These films were grown on seeded Si (111) substrates with different diamond seed densities (0.225, 1.5, 2.3, and 3.1 × 109 nuclei/cm2). Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS) were employed to investigate the crystalline quality, diamond yield, and stresses developed in the films as a function of seeding density. Thermal interfacial stress, interactions across grain boundaries, and internal stress were considered in order to account for the total stress observed from the Raman band. We present correlations among seed density, relative amount of non-sp3 phase, O/C ratio, and total intrinsic stress.

Effects of CH4 Concentration on CVD Diamond Coatings Deposited on Cemented Carbide Cutting Cools

2006 ◽  
Vol 532-533 ◽  
pp. 480-483 ◽  
Author(s):  
Wen Zhuang Lu ◽  
Dun Wen Zuo ◽  
Min Wang ◽  
Feng Xu
Keyword(s):  
Residual Stress ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Great Influence ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Cemented Carbide ◽  
Diamond Coatings ◽  
Ch4 Concentration

Chemical vapor deposition (CVD) diamond coatings were deposited on cemented carbide cutting cools by an electron-assisted hot filament chemical vapor deposition (EACVD) equipment developed by the authors. The CVD diamond coatings were studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman). The experimental results show that CH4 concentration in the source gas performs great influence on the micro-structure, surface roughness, composition, residual stress and adhesion of the CVD diamond coatings. The increase of CH4 concentration results the change of diamond crystal from {111} orientation to {100} orientation, the decrease of the surface roughness and the increase of sp2 carbon in the CVD diamond coatings. A residual compressive stress exists in the CVD diamond coatings. The residual stress decreases with increasing CH4 concentration. A higher or lower CH4 concentration tends to reduce adhesion stress of the continuous CVD diamond coatings.

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