scholarly journals Hybridization of epsilon-near-zero modes via resonant tunneling in layered metal-insulator double nanocavities

Nanophotonics ◽  
2019 ◽  
Vol 8 (9) ◽  
pp. 1505-1512 ◽  
Author(s):  
Vincenzo Caligiuri ◽  
Milan Palei ◽  
Giulia Biffi ◽  
Roman Krahne

AbstractThe coupling between multiple nanocavities in close vicinity leads to the hybridization of their modes. Stacked metal-insulator-metal (MIM) nanocavities constitute a highly versatile and very interesting model system to study and engineer such mode coupling, as they can be realized by lithography-free fabrication methods with fine control on the optical and geometrical parameters. The resonant modes of such MIM cavities are epsilon-near-zero (ENZ) resonances, which are appealing for nonlinear photophysics and a variety of applications. Here, we study the hybridization of ENZ resonances in MIMIM nanocavities, obtaining a very large mode splitting reaching 0.477 eV, Q-factors of the order of 40 in the visible spectral range, and fine control on the resonance wavelength and mode linewidth by tuning the thickness of the dielectric and metallic layers. A semiclassical approach that analyzes the MIMIM structure as a double quantum well system allows to derive the exact analytical dispersion relation of the ENZ resonances, achieving perfect agreement with numerical simulations and experiments. Interestingly, the asymmetry of the mode splitting in a symmetric MIMIM cavity is not reflected in the classical model of coupled oscillators, which can be directly related to quantum mechanical tunneling for the coupling of the two cavities. Interpreting the cavity resonances as resonant tunneling modes elucidates that they can be excited without momentum matching techniques. The broad tunability of high-quality ENZ resonances together with their strong coupling efficiency makes such MIMIM cavities an ideal platform for exploring light-matter interaction, for example, by the integration of quantum emitters in dielectric layers.

Nano Letters ◽  
2019 ◽  
Vol 19 (5) ◽  
pp. 3151-3160 ◽  
Author(s):  
Vincenzo Caligiuri ◽  
Milan Palei ◽  
Giulia Biffi ◽  
Sergey Artyukhin ◽  
Roman Krahne

2021 ◽  
Author(s):  
Joel Kuttruff ◽  
Roman Krahne ◽  
Antonio de Luca ◽  
Vincenzo Caligiuri ◽  
Nicolò Maccaferri

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2301
Author(s):  
Zhenya Meng ◽  
Hailin Cao ◽  
Run Liu ◽  
Xiaodong Wu

In this paper, a reconfigurable sensing platform based on an asymmetrical metal-insulator-metal stacked structure integrating an indium tin oxide (ITO) ultrathin film is proposed and investigated numerically. The epsilon-near-zero (ENZ) mode and antisymmetric mode can be resonantly excited, generating near-perfect absorption of over 99.7% at 1144 and 1404 nm, respectively. The absorptivity for the ENZ mode can be modulated from 90.2% to 98.0% by varying the ENZ wavelength of ITO by applying different voltages. To obtain a highly sensitive biosensor, we show that the proposed structure has a full-width at half-maximum (FWHM) of 8.65 nm and a figure-of-merit (FOM) of 24.7 with a sensitivity of 213.3 nm/RI (refractive index) for the glucose solution. Our proposed device has potential for developing tunable biosensors for real-time health monitoring.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
R. Yukawa ◽  
M. Kobayashi ◽  
T. Kanda ◽  
D. Shiga ◽  
K. Yoshimatsu ◽  
...  

AbstractThe metal-insulator transition (MIT), a fascinating phenomenon occurring in some strongly correlated materials, is of central interest in modern condensed-matter physics. Controlling the MIT by external stimuli is a key technological goal for applications in future electronic devices. However, the standard control by means of the field effect, which works extremely well for semiconductor transistors, faces severe difficulties when applied to the MIT. Hence, a radically different approach is needed. Here, we report an MIT induced by resonant tunneling (RT) in double quantum well (QW) structures of strongly correlated oxides. In our structures, two layers of the strongly correlated conductive oxide SrVO3 (SVO) sandwich a barrier layer of the band insulator SrTiO3. The top QW is a marginal Mott-insulating SVO layer, while the bottom QW is a metallic SVO layer. Angle-resolved photoemission spectroscopy experiments reveal that the top QW layer becomes metallized when the thickness of the tunneling barrier layer is reduced. An analysis based on band structure calculations indicates that RT between the quantized states of the double QW induces the MIT. Our work opens avenues for realizing the Mott-transistor based on the wave-function engineering of strongly correlated electrons.


Sign in / Sign up

Export Citation Format

Share Document